TSM05N03CW RPG

TSM05N03 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 30 Features ID (A) 60 @ VGS =10V 5 90 @ VGS =4.5V 3.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM05N03CW RPG SOT-223 2.5Kpcs / 13” Reel N-Channel MOSFET Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID 5 A IDM ±20 A IS 1.7 A Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Ta = 25 C Maximum Power Dissipation 3 PD o Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range W 1.1 TJ +150 o TJ, TSTG -55 to +150 o Symbol Limit C C Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC 15 Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 45 Unit o C/W o C/W Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 5 sec. 1/4 Version: A12 TSM05N03 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1 -- 3 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1.0 µA On-State Drain Current VDS =5V, VGS = 10V ID(ON) 5 -- -- A -- 46 60 -- 70 90 Drain-Source On-State Resistance VGS = 10V, ID = 5A VGS = 4.5V, ID = 3.8A RDS(ON) mΩ Forward Transconductance VDS = 10V, ID = 5A gfs -- 5 -- S Diode Forward Voltage IS = 2.5A, VGS = 0V VSD -- -- 1.2 V Qg -- 4.2 7 Qgs -- 1.9 -- Qgd -- 1.35 -- Ciss -- 555 -- Coss -- 120 -- Crss -- 60 -- td(on) -- 4.2 5.5 tr -- 19 25 td(off) -- 13 17 -- 9 12 b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, ID = 5A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF b.c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/4 nS Version: A12 TSM05N03 30V N-Channel MOSFET SOT-223 Mechanical Drawing DIM A B C D E F G H I J K 3/4 SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071 Version: A12 TSM05N03 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12