C3M0350120D

C3M0350120D VDS 1200 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 7.6 A 350 mΩ N-Channel Enhancement Mode Features • • • • • Package C3MTM SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • • • • Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications • • • • Renewable energy High voltage DC/DC converters Switch Mode Power Supplies UPS Part Number Package Marking C3M0350120D TO-247-3 C3M0350120D Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 1200 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25˚C Fig. 19 ID Continuous Drain Current ID(pulse) PD TJ , Tstg 7.6 5.5 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 20 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 50 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to +150 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0350120D Rev. A, 03-2020 1.6mm (0.063”) from case for 10s M3 or 6-32 screw Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. Max. Unit V VGS = 0 V, ID = 100 μA 2.5 3.6 V VDS = VGS, ID = 1 mA V VDS = VGS, ID = 1 mA, TJ = 150ºC 1200 1.8 2.0 Drain-Source On-State Resistance 1 50 μA VDS = 1200 V, VGS = 0 V 10 250 nA VGS = 15 V, VDS = 0 V 350 455 525 2.9 gfs Transconductance Ciss Input Capacitance 345 Coss Output Capacitance 20 Crss Reverse Transfer Capacitance 3.4 Eoss Coss Stored Energy 10.6 EON Turn-On Switching Energy (SiC Diode FWD) 128 EOFF Turn Off Switching Energy (SiC Diode FWD) 5 EON Turn-On Switching Energy (Body Diode FWD) 158 EOFF Turn Off Switching Energy (Body Diode FWD) 5 td(on) Turn-On Delay Time 25 Rise Time 16 Turn-Off Delay Time 14 Fall Time 17 Internal Gate Resistance 7 tr td(off) tf RG(int) Test Conditions S 2.6 Qgs Gate to Source Charge 5 Qgd Gate to Drain Charge 9 Qg Total Gate Charge 19 mΩ pF Note VGS = 15 V, ID = 3.6 A VGS = 15 V, ID = 3.6 A, TJ = 150ºC VDS= 20 V, IDS= 3.6 A VDS= 20 V, IDS= 3.6 A, TJ = 150ºC Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 1000 V f = 1 MHz μJ Fig. 11 VAC = 25 mV Fig. 16 μJ VDS = 800 V, VGS = -4 V/15 V, ID = 3.6 A, RG(ext) = 2.5 Ω, L= 716 μH, TJ = 150ºC Fig. 26, 29 μJ VDS = 800 V, VGS = -4 V/15 V, ID = 3.6 A, RG(ext) = 2.5 Ω, L= 716 μH, TJ = 150ºC Fig. 26, 29 ns VDD = 800 V, VGS = -4 V/15 V ID = 3.6 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27, 28 Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -4 V/15 V ID = 3.6 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions 4.5 V VGS = -4 V, ISD = 1.8 A 4.0 V VGS = -4 V, ISD = 1.8 A, TJ = 150 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 9.4 A VGS = -4 V, TJ = 25 ˚C Note 1 Diode pulse Current 20 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 3.6 A, VR = 800 V dif/dt = 850 A/µs, TJ = 150 °C Note 1 trr Reverse Recover time 26 ns Qrr Reverse Recovery Charge 67 nC Irrm Peak Reverse Recovery Current 4 A Thermal Characteristics Symbol RθJC 2 Parameter Thermal Resistance from Junction to Case C3M0350120D Rev. A, 03-2020 Typ. Unit 2.5 °C/W Test Conditions Note Fig. 21 Typical Performance 20 Conditions: TJ = -55 °C tp = < 200 µs VGS = 13V 15 Drain-Source Current, IDS (A) Conditions: TJ = 25 °C tp = < 200 µs VGS = 15V 10 Drain-Source Current, IDS (A) 20 VGS = 11V 5 VGS = 9V VGS = 15V VGS = 13V 15 VGS = 11V 10 VGS = 9V 5 VGS = 7V VGS = 7V 0 0 2 4 6 8 10 0 12 0 2 4 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 20 1.8 10 12 Conditions: IDS = 5 A VGS = 15 V tp < 200 µs 1.6 VGS = 13V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 8 Figure 2. Output Characteristics TJ = 25 ºC Conditions: TJ = 150 °C tp = < 200 µs 15 6 Drain-Source Voltage, VDS (V) VGS = 15V VGS = 11V 10 VGS = 9V 5 VGS = 7V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -50 -25 0 Drain-Source Voltage, VDS (V) Figure 3. Output Characteristics TJ = 150 ºC 1,000 TJ = 150 °C 600 500 TJ = -55 °C 400 TJ = 25 °C 300 200 100 0 2 4 6 8 10 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 100 C3M0350120D Rev. A, 03-2020 125 150 Conditions: IDS = 3.6 A tp < 200 µs 800 700 0 75 900 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 800 50 Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 µs 900 25 Junction Temperature, TJ (°C) 12 14 700 600 VGS = 11 V 500 VGS = 13 V 400 VGS = 15 V 300 200 100 0 -50 -25 0 25 50 75 Junction Temperature, TJ (°C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 20 18 16 14 TJ = 150 °C 12 10 TJ = -55 °C TJ = 25 °C 8 -8 -6 6 4 -4 -2 -5 VGS = -2 V -10 -15 0 2 4 6 8 10 12 Conditions: TJ = -55°C tp < 200 µs 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -6 -4 Figure 8. Body Diode Characteristic at -55 ºC -2 0 0 Drain-Source Current, IDS (A) VGS = -4 V VGS = 0 V -5 VGS = -2 V -10 -10 -8 -6 -4 -2 0 VGS = 0 V -5 VGS = -2 V -10 -15 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -15 Conditions: TJ = 150°C tp < 200 µs -20 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC 4.0 16 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.5 2.0 1.5 1.0 0.5 -25 0 25 50 75 Junction Temperature TJ (°C) 100 125 Figure 11. Threshold Voltage vs. Temperature 4 C3M0350120D Rev. A, 03-2020 Conditions: IDS = 5 A IGS = 50 mA VDS = 800 V TJ = 25 °C 12 3.0 -50 -20 Figure 10. Body Diode Characteristic at 150 ºC Conditons VGS = VDS IDS = 1mA 3.5 0 VGS = -4 V Drain-Source Current, IDS (A) -10 -20 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) 0.0 0 VGS = 0 V 2 0 0 VGS = -4 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 µs 150 8 4 0 -4 0 5 10 15 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 20 Typical Performance -6 -4 -2 0 -10 VGS = 0 V -5 VGS = 5 V VGS = 10 V -10 VGS = 15 V -8 -6 -4 -2 0 0 Drain-Source Current, IDS (A) -8 Drain-Source Current, IDS (A) -10 VGS = 0 V -5 VGS = 5 V VGS = 10 V -10 VGS = 15 V -15 -15 Conditions: TJ = 25 °C tp < 200 µs Conditions: TJ = -55 °C tp < 200 µs -20 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -10 -8 -6 -4 -2 0 16 0 14 VGS = 5 V VGS = 10 V VGS = 15 V -10 12 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -5 -15 Conditions: TJ = 150 °C tp < 200 µs Drain-Source Voltage VDS (V) 10 8 6 4 2 0 -20 0 200 Figure 15. 3rd Quadrant Characteristic at 150 ºC 1000 Coss 10 C3M0350120D Rev. A, 03-2020 1000 1200 TJ = 25 °C VAC = 25 mV f = 1 MHz 100 Coss 10 Crss 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 800 Ciss Crss 100 Drain-Source Voltage, VDS (V) 600 1000 Capacitance (pF) Capacitance (pF) 100 50 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 0 -20 Figure 14. 3rd Quadrant Characteristic at 25 ºC VGS = 0 V 1 0 200 1 0 200 400 600 800 Drain-Source Voltage, VDS (V) 1000 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1200 Typical Performance 60 Conditions: TJ ≤ 150 °C 7 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 8 6 5 4 3 2 1 0 -55 -30 -5 20 45 70 Case Temperature, TC (°C) 95 120 Conditions: TJ ≤ 175 °C 50 40 30 20 10 0 145 -55 1 0.3 0.05 0.02 0.01 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 PW = 100 ms Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) Figure 22. Safe Operating Area Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -4V/+15V FWD = C3M0350120D L = 716 μH 200 ETotal Switching Loss (µJ) Switching Loss (µJ) 145 0.10 1 ETotal EOn 150 EOn 100 100 50 50 EOff EOff 0 0 2 4 6 Drain to Source Current, IDS (A) 8 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 120 PW = 1 ms 1.00 250 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15V FWD = C3M0350120D L = 716 μH 150 95 PW = 10 µs Figure 21. Transient Thermal Impedance (Junction - Case) 200 70 PW = 100 µs 0.01 1E-6 45 Limited by RDS On SinglePulse 10E-3 20 Case Temperature, TC (°C) 10.00 0.5 0.1 100E-3 -5 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Figure 19. Continuous Drain Current Derating vs. Case Temperature -30 C3M0350120D Rev. A, 03-2020 10 0 0 1 2 3 4 5 6 7 Drain to Source Current, IDS (A) 8 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 9 10 Typical Performance 300 200 Conditions: IDS = 5 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -4V/+15 V L = 716 μH FWD = C3M0350120D FWD = C4D05120A 200 Switching Loss (µJ) 250 Switching Loss (µJ) 250 Conditions: TJ = 25 °C VDD = 800 V IDS = 3.6 A VGS = -4V/+15 V FWD = C3M0350120D L = 716 μH ETotal 150 EOn 100 150 ETotal EOn ETotal with diode EOn with diode 100 50 50 EOff 0 0 5 10 EOff 15 20 External Gate Resistor RG(ext) (Ohms) 25 Conditions: TJ = 25 °C VDD = 800 V IDS = 5 A VGS = -4V/+15 V FWD = C3M0320120D 35 Switching Times (ns) 30 0 25 50 75 100 with diode 125 Junction Temperature, TJ (°C) td(on) 25 tr tf 20 td(off) 15 10 5 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0350120D Rev. A, 03-2020 20 EOff 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 40 0 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0350120D Rev. A, 03-2020 Package Dimensions POS Package TO-247-3 A T V U W Pinout Information: • • • Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Recommended Solder Pad Layout TO-247-3 9 C3M0350120D Rev. A, 03-2020 Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0350120D Rev. A, 03-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power