C3M0045065K

C3M0045065K VDS 650 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology 49 A RDS(on) 45 mΩ N-Channel Enhancement Mode Features • • • • • • • Package C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • • • • • Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Gate (Pin 4) Driver Source (Pin 3) Applications • • • • • • EV chargers Server & Telecom PSU UPS Solar inverters SMPS DC/DC converters Power Source (Pin 2) Part Number Package Marking C3M0045065K TO 247-4 C3M0045065K Maximum Ratings Symbol VDSS Drain - Source Voltage, TC = 25 ˚C VGS Gate - Source voltage (Under transient events < 100 ns) ID ID(pulse) PD TJ , Tstg 1 Parameter Value Unit 650 V -8/+19 V Fig. 29 A Fig. 19 Continuous Drain Current, VGS = 15 V, TC = 25˚C 49 Continuous Drain Current, VGS = 15 V, TC = 100˚C 35 Pulsed Drain Current, Pulse width tP limited by Tjmax 132 A Power Dissipation, TC=25˚C, TJ = 175 ˚C 176 W -40 to +175 ˚C Operating Junction and Storage Temperature TL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚C Md Mounting Torque, (M3 or 6-32 screw) 1 8.8 Nm lbf-in C3M0045065K Rev 1, 12-2020 Note Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Parameter Symbol V(BR)DSS Drain-Source Breakdown Voltage Min. Typ. Max. 650 Unit V VGSon Gate-Source Recommended Turn-On Voltage 15 V VGSoff Gate-Source Recommended Turn-Off Voltage -4 V VGS(th) Gate Threshold Voltage 1.8 2.6 3.6 2.2 Test Conditions VGS = 0 V, ID = 100 μA Static V VDS = VGS, ID = 4.84 mA V VDS = VGS, ID = 4.84 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 650 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 45 60 RDS(on) Drain-Source On-State Resistance 61 12 gfs Transconductance Ciss Input Capacitance 1621 Coss Output Capacitance 101 Crss Reverse Transfer Capacitance Co(er) Effective Output Capacitance (Energy Related) 126 Co(tr) Effective Output Capacitance (Time Related) 178 Eoss Coss Stored Energy 20 EON Turn-On Switching Energy (Body Diode) 57 11 8 EOFF Turn Off Switching Energy (Body Diode) 14 EON Turn-On Switching Energy (External Diode) 44 EOFF Turn Off Switching Energy (External Diode) 14 td(on) Turn-On Delay Time 9 Rise Time 12 Turn-Off Delay Time 18 Fall Time 6 tr td(off) tf RG(int) Internal Gate Resistance 3 Qgs Gate to Source Charge 21 Qgd Gate to Drain Charge 18 Qg Total Gate Charge 63 mΩ S VGS = 15 V, ID = 17.6 A VGS = 15 V, ID = 17.6 A, TJ = 175ºC VDS= 20 V, IDS= 17.6 A VDS= 20 V, IDS= 17.6 A, TJ = 175ºC VGS = 0 V, VDS = 0V to 600 V F = 1 Mhz pF C3M0045065K Rev 1, 12-2020 Fig. 29 Fig. 11 Fig. 4, 5,6 Fig. 7 Fig. 17, 18 VAC = 25 mV VGS = 0 V, VDS = 0V to 400 V Note: 1 Note: 1 μJ VDS = 600 V, F = 1 Mhz Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC Fig. 25 FWD = Internal Body Diode of MOSFET μJ VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC Fig. 25 FWD = External SiC DIODE ns VDD = 400 V, VGS = -4 V/15 V ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH Timing relative to VDS Inductive load Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 17.6 A Per IEC60747-8-4 pg 21 Note (1): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V 2 Note Fig. 26 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.8 V VGS = -4 V, ISD = 8.8 A, TJ = 25 °C 4.2 V VGS = -4 V, ISD = 8.8 A, TJ = 175 °C Continuous Diode Forward Current 29 A VGS = -4 V, TC = 25˚C Diode pulse Current 132 A VGS = -4 V, pulse width tP limited by Tjmax trr Reverse Recover time 13 ns Qrr Reverse Recovery Charge 247 nC Irrm Peak Reverse Recovery Current 36 A trr Reverse Recover time 18 ns Qrr Reverse Recovery Charge 171 nC Irrm Peak Reverse Recovery Current 16 A Note Fig. 8, 9, 10 VGS = -4 V, ISD = 17.6 A, VR = 400 V dif/dt = 5215 A/µs, TJ = 175 °C VGS = -4 V, ISD = 17.6 A, VR = 400 V dif/dt = 1775 A/µs, TJ = 175 °C Thermal Characteristics Symbol 3 Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.85 RθJA Thermal Resistance From Junction to Ambient C3M0045065K Rev 1, 12-2020 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance Drain-Source Current, IDS (A) 80 100 VGS = 13V VGS = 15V Conditions: Tj = -40 °C tp = < 200 µs 60 VGS = 11V 40 VGS = 9V 20 VGS = 15V Conditions: Tj = 25 °C tp = < 200 µs 80 Drain-Source Current, IDS (A) 100 VGS = 13V VGS = 11V 60 40 VGS = 9V 20 VGS = 7V VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 10.0 0 12.0 0.0 2.0 4.0 Figure 1. Output Characteristics TJ = -40 ºC Conditions: Tj = 175 °C tp = < 200 µs Drain-Source Current, IDS (A) 80 8.0 10.0 12.0 Figure 2. Output Characteristics TJ = 25 ºC 2.0 VGS = 15V VGS = 13V 1.8 VGS = 11V 1.6 60 On Resistance, RDS On (P.U.) 100 6.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) VGS = 9V 40 VGS = 7V 20 Conditions: IDS = 17.6 A VGS = 15 V tp < 200 µs 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -50 -25 0 Drain-Source Voltage, VDS (V) 80 Tj = 175 °C 70 Tj = -40 °C 60 50 Tj = 25 °C 40 30 20 10 0 0 20 40 60 80 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 4 C3M0045065K Rev 1, 12-2020 100 75 100 125 150 175 Conditions: IDS = 17.6 A tp < 200 µs 140 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 160 Conditions: VGS = 15 V tp < 200 µs 90 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 175 ºC 100 25 Junction Temperature, Tvj (°C) 120 120 100 VGS = 11 V 80 VGS = 13 V 60 40 VGS = 15 V 20 0 -50 -25 0 25 50 75 100 Junction Temperature, Tj (°C) 125 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 175 Typical Performance 100 90 -8 -6 -4 -2 80 70 TJ = 175 °C 60 50 TJ = -40 °C TJ = 25 °C 40 30 20 2 3 -20 VGS = -2 V -40 -60 4 5 6 7 8 9 10 11 12 -6 -4 -2 0 0 -10 -8 -6 -4 -2 0 0 VGS = 0 V -20 VGS = -2 V -40 -60 Drain-Source Voltage VDS (V) Drain-Source Current, IDS (A) VGS = -4 V VGS = -4 V Drain-Source Current, IDS (A) Figure 8. Body Diode Characteristic at -40 ºC Conditions: Tj = 25°C tp < 200 µs 4.0 VGS = -2 V -40 -60 -80 Conditions: Tj = 175°C tp < 200 µs -100 Drain-Source Voltage VDS (V) -80 -100 Figure 10. Body Diode Characteristic at 175 ºC 16 Conditons VGS = VDS IDS = 4.84 mA 3.5 -20 VGS = 0 V Figure 9. Body Diode Characteristic at 25 ºC 2.5 2.0 1.5 1.0 Conditions: IDS = 17.6 A IGS = 50 mA VDS = 400 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) 3.0 Threshold Voltage, Vth (V) -100 Drain-Source Voltage VDS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -80 Conditions: Tj = -40°C tp < 200 µs Gate-Source Voltage, VGS (V) -10 0 VGS = 0 V 10 0 0 VGS = -4 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 µs 8 4 0 0.5 0.0 -50 -25 0 25 50 75 100 Junction Temperature TJ (°C) 125 Figure 11. Threshold Voltage vs. Temperature 5 C3M0045065K Rev 1, 12-2020 150 175 -4 0 10 20 30 40 50 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 60 70 Typical Performance -8 -6 -4 -2 0 0 -8 -20 VGS = 5 V -40 VGS = 10 V VGS = 15 V -60 -4 -2 -40 -80 -100 Drain-Source Voltage VDS (V) 25 0 20 -20 VGS = 5 V -40 VGS = 10 V VGS = 15 V -60 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -60 VGS = 15 V Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 15 10 5 Conditions: Tj = 175 °C tp < 200 µs Drain-Source Voltage VDS (V) -80 0 -100 0 100 Figure 15. 3rd Quadrant Characteristic at 175 ºC 10000 400 500 700 600 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) 1000 Coss 100 Crss 10 1 300 Drain to Source Voltage, VDS (V) 10000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 200 Figure 16. Output Capacitor Stored Energy 1000 Capacitance (pF) 0 -20 Conditions: Tj = 25 °C tp < 200 µs VGS = 0 V 0 50 100 Drain-Source Voltage, VDS (V) C3M0045065K Rev 1, 12-2020 Coss 100 Crss 10 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 6 0 VGS = 10 V Figure 13. 3rd Quadrant Characteristic at -40 ºC -6 -2 VGS = 5 V -100 Drain-Source Voltage VDS (V) -8 -4 -80 Conditions: Tj = -40 °C tp < 200 µs -10 -6 VGS = 0 V VGS = 0 V Drain-Source Current, IDS (A) -10 Drain-Source Current, IDS (A) -10 200 1 0 100 300 200 400 Drain-Source Voltage, VDS (V) 500 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 650V) 600 Typical Performance 180 Conditions: TJ ≤ 175 °C 45 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 50 40 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 Case Temperature, TC (°C) 150 Conditions: TJ ≤ 175 °C 160 140 120 100 80 60 40 20 0 175 -50 Figure 19. Continuous Drain Current Derating vs. Case Temperature -25 0 25 50 75 100 125 Case Temperature, TC (°C) 150 175 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 100.00 0.5 Limited by RDS On 0.3 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 1 0.1 100E-3 0.05 0.02 0.01 10E-3 SinglePulse 1E-3 1 µs 10.00 100 µs 1.00 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 0.10 1 Figure 21. Transient Thermal Impedance (Junction - Case) 120 100 Switching Loss (uJ) 300 Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0045065K L = 99 μH 250 EOn 60 40 EOff 0 5 10 15 20 25 Drain to Source Current, IDS (A) 30 35 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 7 1 10 100 1000 Drain-Source Voltage, VDS (V) 200 ETotal EOn 150 100 EOff 50 20 0 0.1 Conditions: TJ = 25 °C VDD = 400 V IDS = 17.6 A VGS = -4/+15 V FWD = C3M0045065K L = 99 μH ETotal 80 Conditions: TC = 25 °C D = 0, Parameter: tp Figure 22. Safe Operating Area Switching Loss (uJ) 140 1 ms 100 ms 0.01 1E-6 10 µs C3M0045065K Rev 1, 12-2020 40 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 Figure 24. Clamped Inductive Switching Energy vs. RG(ext) 25 Typical Performance 100 Switching Loss (uJ) 70 Conditions: IDS = 17.6 A VDD = 400 V RG(ext) = 2.5 Ω VGS = -4/+15 V L = 99 μH FWD = C3M0045065K FWD = C4D20120A 80 Conditions: TJ = 25 °C VDD = 400 V IDS = 17.6 A VGS = -4/+15 V FWD = C3M0045065K 60 Switching Times (ns) 120 ETotal ETotal with Schottky 60 EOn 40 EOn with Schottky 20 EOff with Schottky 50 td(off) 40 tr 30 td(on) 20 tf 10 EOff 0 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 175 Figure 25. Clamped Inductive Switching Energy vs. Temperature 8 C3M0045065K Rev 1, 12-2020 200 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 26. Switching Times vs. RG(ext) 20 25 Test Circuit Schematic D1 L=156 uH LL= 57.6 µH L==135 99 µH uH VDC C4D10120A C4D20120A 10A,1200V 1200V 20A, SiC Schottky Schottky SiC CDC=42.3 uF Q2 RG D.U.T D.U.T C3M0060065K C3M0015065K C3M0045065K C2M0080120D Figure 27. Clamped Inductive Switching Waveform Test Circuit Q1 RG LL == 57.6 99 µH uH L= 135uH µH L=156 VDC D.U.T C3M0060065K C3M0015065K C3M0045065K D.U.T C2M0080120D VGS = --4V 5V CDC=42.3 uF Q2 RG C3M0015065K C3M0045065K C3M0060065K C2M0080120D Figure 28. Body Diode Recovery Test Circuit 19 V 15 V VGSon VGS 0V VGSoff -4 V t < 100ns -8 V 3 CREE CONFIDENTIAL & PROPRIETARY © 2018 Cree, Inc. All rights reserved. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Figure 29. VGS Waveform Example 9 C3M0045065K Rev 1, 12-2020 Package Dimensions Package TO-247-4L 10 C3M0045065K Rev 1, 12-2020 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS 11 C3M0045065K Rev 1, 12-2020 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 12 C3M0045065K Rev 1, 12-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power