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TSM60N380CZ C0G

TSM60N380CZ C0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO-220-3

  • 描述:

    MOSFET N-CHANNEL 600V 11A TO220

  • 数据手册
  • 价格&库存
TSM60N380CZ C0G 数据手册
TSM60N380CZ Taiwan Semiconductor N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES KEY PERFORMANCE PARAMETERS ● Super-Junction technology PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 0.38 Ω Qg 20.5 nC ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance ● Pb-free plating en de d ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATION ● Power Supply ● Lighting eco mm TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SYMBOL Limit UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 11 A 6.6 A IDM 33 A No tR PARAMETER Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C PDTOT 125 W Single Pulsed Avalanche Energy (Note 3) EAS 169 mJ Single Pulsed Avalanche Current (Note 3) IAS 2.6 A TJ, TSTG - 55 to +150 °C SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 1.0 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 1 Version: A1607 TSM60N380CZ Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.0 3.1 4.0 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA RDS(on) -- 0.31 0.38 Ω Drain-Source On-State Resistance (Note 4) (Note 5) de Dynamic VGS = 10V, ID = 5.5A Total Gate Charge VDS = 380V, ID = 11A, Gate-Source Charge Qg -- 20.5 -- Qgs -- 4.8 -- Qgd -- 6.5 -- en VGS = 10V Gate-Drain Charge d Drain-Source Breakdown Voltage nC VDS = 100V, VGS = 0V, Ciss -- 1040 -- Output Capacitance f = 1.0MHz Coss -- 66 -- Gate Resistance F = 1MHz, open drain Rg -- 3.2 -- td(on) -- 24 -- tr -- 28 -- td(off) -- 70 -- tf -- 60 -- VSD -- -- 1.4 V VR=200V, IS = 5.5A trr -- 210 -- ns dIF/dt = 100A/μs Qrr -- 1.8 -- μC Switching mm Input Capacitance (Note 6) Turn-On Delay Time VDD = 380V, Turn-On Rise Time Turn-Off Delay Time ID = 11A, VGS = 10V, Turn-Off Fall Time Source-Drain Diode Forward On Voltage e co RGEN = 35Ω, (Note 4) tR Reverse Recovery Time IS = 11A, VGS = 0V Reverse Recovery Charge Notes: Ω ns Current limited by package. No 1. pF 2. Pulse width limited by the maximum junction temperature. 3. L = 50mH, IAS = 2.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION PART NO. TSM60N380CZ C0G PACKAGE PACKING TO-220 50pcs / Tube 2 Version: A1607 TSM60N380CZ Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics en de d Output Characteristics Gate-Source Voltage vs. Gate Charge tR e co mm On-Resistance vs. Drain Current Source-Drain Diode Forward Current vs. Voltage No On-Resistance vs. Junction Temperature 3 Version: A1607 TSM60N380CZ Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature en de d Capacitance vs. Drain-Source Voltage tR e co mm Maximum Safe Operating Area 10 No Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case 1 100 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-1 10-2 10-3 10-4 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration (sec) 4 Version: A1607 TSM60N380CZ Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) en de d TO-220 MARKING DIAGRAM mm = Halogen Free = Year Code = Week Code (01~52) = Factory Code No tR e co G Y WW F 5 Version: A1607 TSM60N380CZ No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1607
TSM60N380CZ C0G 价格&库存

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TSM60N380CZ C0G
    •  国内价格
    • 139+6.37709

    库存:1988