TSM60N380CZ
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 11A, 0.38Ω
FEATURES
KEY PERFORMANCE PARAMETERS
● Super-Junction technology
PARAMETER
VALUE
UNIT
VDS
600
V
RDS(on) (max)
0.38
Ω
Qg
20.5
nC
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
● Pb-free plating
en
de
d
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATION
● Power Supply
● Lighting
eco
mm
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SYMBOL
Limit
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
11
A
6.6
A
IDM
33
A
No
tR
PARAMETER
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
Total Power Dissipation @ TC = 25°C
PDTOT
125
W
Single Pulsed Avalanche Energy
(Note 3)
EAS
169
mJ
Single Pulsed Avalanche Current
(Note 3)
IAS
2.6
A
TJ, TSTG
- 55 to +150
°C
SYMBOL
Limit
UNIT
Junction to Case Thermal Resistance
RӨJC
1.0
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air.
1
Version: A1607
TSM60N380CZ
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
VGS = 0V, ID = 250µA
BVDSS
600
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2.0
3.1
4.0
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
1
µA
RDS(on)
--
0.31
0.38
Ω
Drain-Source On-State Resistance
(Note 4)
(Note 5)
de
Dynamic
VGS = 10V, ID = 5.5A
Total Gate Charge
VDS = 380V, ID = 11A,
Gate-Source Charge
Qg
--
20.5
--
Qgs
--
4.8
--
Qgd
--
6.5
--
en
VGS = 10V
Gate-Drain Charge
d
Drain-Source Breakdown Voltage
nC
VDS = 100V, VGS = 0V,
Ciss
--
1040
--
Output Capacitance
f = 1.0MHz
Coss
--
66
--
Gate Resistance
F = 1MHz, open drain
Rg
--
3.2
--
td(on)
--
24
--
tr
--
28
--
td(off)
--
70
--
tf
--
60
--
VSD
--
--
1.4
V
VR=200V, IS = 5.5A
trr
--
210
--
ns
dIF/dt = 100A/μs
Qrr
--
1.8
--
μC
Switching
mm
Input Capacitance
(Note 6)
Turn-On Delay Time
VDD = 380V,
Turn-On Rise Time
Turn-Off Delay Time
ID = 11A, VGS = 10V,
Turn-Off Fall Time
Source-Drain Diode
Forward On Voltage
e co
RGEN = 35Ω,
(Note 4)
tR
Reverse Recovery Time
IS = 11A, VGS = 0V
Reverse Recovery Charge
Notes:
Ω
ns
Current limited by package.
No
1.
pF
2.
Pulse width limited by the maximum junction temperature.
3.
L = 50mH, IAS = 2.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.
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ORDERING INFORMATION
PART NO.
TSM60N380CZ C0G
PACKAGE
PACKING
TO-220
50pcs / Tube
2
Version: A1607
TSM60N380CZ
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Transfer Characteristics
en
de
d
Output Characteristics
Gate-Source Voltage vs. Gate Charge
tR
e co
mm
On-Resistance vs. Drain Current
Source-Drain Diode Forward Current vs. Voltage
No
On-Resistance vs. Junction Temperature
3
Version: A1607
TSM60N380CZ
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
en
de
d
Capacitance vs. Drain-Source Voltage
tR
e co
mm
Maximum Safe Operating Area
10
No
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
1
100
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-1
10-2
10-3
10-4
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
4
Version: A1607
TSM60N380CZ
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
en
de
d
TO-220
MARKING DIAGRAM
mm
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
No
tR
e co
G
Y
WW
F
5
Version: A1607
TSM60N380CZ
No
tR
e co
mm
en
de
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Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular
purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: A1607
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