C3M0280090J

C3M0280090J Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features • • • • • • • Package New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source TAB Drain Benefits • • • • Drain (TAB) 1 2 3 4 5 G KS S S S Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency 6 S 7 S Gate (Pin 1) Applications • • • • • Driver Source (Pin 2) Renewable energy Lighting High voltage DC/DC converters Telecom Power Supplies Induction Heating Power Source (Pin 3,4,5,6,7) Part Number Package C3M0280090J TO-263-7 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -8/+18 V Absolute maximum values VGSop Gate - Source Voltage -4/+15 V Recommended operational values Note (1) VGS = 15 V, TC = 25˚C Fig. 19 ID Continuous Drain Current ID(pulse) PD TJ , Tstg TL 11 7 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 22 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 49 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to +150 ˚C 260 ˚C Operating Junction and Storage Temperature Solder Temperature Note (1): MOSFET can also safely operate at 0/+15 V 1 Value C3M0280090J Rev. 2 09-2021 1.6mm (0.063”) from case for 10s Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 900 1.8 2.7 3.5 2.2 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 1.2 mA V VDS = VGS, ID = 1.2 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 320 360 RDS(on) Drain-Source On-State Resistance 416 3.6 gfs Transconductance Ciss Input Capacitance 204 Coss Output Capacitance 26 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 5.5 EON Turn-On Switching Energy 18 EOFF Turn Off Switching Energy 2.4 td(on) Turn-On Delay Time 4 Rise Time 7 Turn-Off Delay Time 7 Fall Time 4 tr td(off) tf RG(int) Internal Gate Resistance Qgs Gate to Source Charge 4 Gate to Drain Charge 2 Qg Total Gate Charge 10 VGS = 15 V, ID = 7.5 A, TJ = 150ºC VDS= 15 V, IDS= 7.5 A VDS= 15 V, IDS= 7.5 A, TJ = 150ºC f = 1 MHz VAC = 25 mV μJ Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 600 V pF 23.5 Qgd VGS = 15 V, ID = 7.5 A mΩ S 3.6 Note Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 7.5 A, RG(ext) = 2.5Ω, L= 201 μH, TJ = 150ºC Fig. 26, 29 Note(3) ns VDD = 400 V, VGS = -4 V/15 V ID = 7.5 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27, 29 Note(3) Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 7.5 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Test Conditions Unit 4.8 V VGS = -4 V, ISD = 4 A 4.4 V VGS = -4 V, ISD = 4 A, TJ = 150 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 9 A VGS = -4 V Note (2) Diode pulse Current 22 A VGS = -4 V, pulse width tP limited by Tjmax Note (2) VGS = -4 V, ISD = 7.5 A, VR = 400 V dif/dt = 2725 A/µs, TJ = 150 °C Note (2) trr Reverse Recover time 8 ns Qrr Reverse Recovery Charge 39 nC Irrm Peak Reverse Recovery Current 8 A Note (2): When using SiC Body Diode the maximum recommended VGS = -4V Thermal Characteristics Symbol 2 Parameter Max. RθJC Thermal Resistance from Junction to Case 2.5 RθJA Thermal Resistance From Junction to Ambient 40 C3M0280090J Rev. 2 09-2021 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 20 16 16 VGS = 13V 12 VGS = 11V 8 4 VGS = 9V VGS = 15V Conditions: Tj = 25 °C tp = < 200 µs VGS = 15V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 20 Conditions: Tj = -55 °C tp = < 200 µs VGS = 13V VGS = 11V 12 8 VGS = 9V 4 VGS = 7V VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 10.0 0 12.0 0.0 2.0 4.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 16 Drain-Source Current, IDS (A) 2.0 Conditions: Tj = 150 °C tp = < 200 µs 8.0 10.0 12.0 Figure 2. Output Characteristics TJ = 25 ºC Conditions: IDS = 7.5 A VGS = 15 V tp < 200 µs 1.8 VGS = 15V VGS = 13V 1.6 VGS = 11V On Resistance, RDS On (P.U.) 20 6.0 Drain-Source Voltage, VDS (V) 12 VGS = 9V 8 VGS = 7V 4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -50 -25 0 25 Figure 3. Output Characteristics TJ = 150 ºC 700 Tj = 150 °C 400 Tj = -55 °C Tj = 25 °C 300 200 100 0 0 5 10 15 Drain-Source Current, IDS (A) 20 Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 C3M0280090J Rev. 2 09-2021 100 125 150 Conditions: IDS = 7.5 A tp < 200 µs 1,000 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 1,200 500 75 Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 µs 600 50 Junction Temperature, Tj (°C) Drain-Source Voltage, VDS (V) 25 800 VGS = 11 V 600 VGS = 13 V 400 VGS = 15 V 200 0 -50 -25 0 25 50 75 Junction Temperature, Tj (°C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance -10 Conditions: VDS = 20 V tp < 200 µs 16 TJ = 150 °C 12 TJ = 25 °C TJ = -55 °C 8 4 0 0 2 4 6 8 10 -8 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 20 12 -6 VGS = -4 V -4 -8 -16 Conditions: Tj = -55°C tp < 200 µs -20 Drain-Source Voltage VDS (V) Figure 8. Body Diode Characteristic at -55 ºC -2 0 VGS = 0 V 0 -8 VGS = -2 V -12 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -10 -8 4.0 -4 -2 VGS = -4 V 0 VGS = 0 V 0 -8 VGS = -2 V -12 -16 Conditions: Tj = 150°C tp < 200 µs -20 Drain-Source Voltage VDS (V) -16 -20 Figure 10. Body Diode Characteristic at 150 ºC 16 Conditons VGS = VDS IDS = 1.2 mA 3.5 -6 -4 Figure 9. Body Diode Characteristic at 25 ºC Conditions: IDS = 7.5 A IGS = 11 mA VDS = 400 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) 3.0 Threshold Voltage, Vth (V) VGS = 0 V 14 -4 VGS = -4 V 0 -12 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -6 0 VGS = -2 V Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -2 -4 Gate-Source Voltage, VGS (V) -10 -4 2.5 2.0 1.5 1.0 8 4 0 0.5 0.0 -4 -50 -25 0 25 50 75 Junction Temperature TJ (°C) 100 125 Figure 11. Threshold Voltage vs. Temperature 4 C3M0280090J Rev. 2 09-2021 150 0 2 4 6 8 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 10 12 Typical Performance -6 -2 -4 0 VGS = 0 V Drain-Source Current, IDS (A) -10 0 -4 VGS = 5 V -8 VGS = 10 V VGS = 15 V -12 -8 VGS = 0 V -4 -2 0 0 -4 VGS = 5 V VGS = 15 V -8 -12 Conditions: Tj = 25 °C tp < 200 µs Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -6 -2 VGS = 10 V -20 Drain-Source Voltage VDS (V) -8 -4 -16 Conditions: Tj = -55 °C tp < 200 µs -10 -6 Drain-Source Current, IDS (A) -8 -10 -16 -20 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 12 0 Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V -8 VGS = 10 V VGS = 15 V -12 Stored Energy, EOSS (µJ) 10 -4 6 4 2 -16 Conditions: Tj = 150 °C tp < 200 µs 8 0 -20 Drain-Source Voltage VDS (V) 0 200 Figure 15. 3rd Quadrant Characteristic at 150 ºC 1000 Coss 10 50 100 Drain-Source Voltage, VDS (V) 100 Coss 10 Crss 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0280090J Rev. 2 09-2021 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Crss 0 800 1000 Capacitance (pF) Capacitance (pF) 100 1 600 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 400 Drain to Source Voltage, VDS (V) 200 1 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 800 900 Typical Performance 60 Conditions: TJ ≤ 150 °C 10 Maximum Dissipated Power, Ptot (W) Drain-Source Continuous Current, IDS (DC) (A) 12 8 6 4 2 0 -50 -25 0 25 50 75 Case Temperature, TC (°C) 100 125 0.5 30 20 10 -50 -25 10.00 0.3 0.1 0.05 100E-3 40 0.02 0.01 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 10 µs 100 µs 1 ms 0.10 1 0.1 1 ETotal EOn 40 20 100 1000 40 ETotal 30 EOn 20 10 EOff EOff 0 2 4 6 8 10 Drain to Source Current, IDS (A) 12 14 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 10 Drain-Source Voltage, VDS (V) Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0280090J L = 201 μH 50 Switching Loss (µJ) Switching Loss (µJ) 60 60 0 100 ms Conditions: TC = 25 °C D = 0, Parameter: tp Figure 22. Safe Operating Area Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0280090J L = 201 μH 80 150 125 1.00 Figure 21. Transient Thermal Impedance (Junction - Case) 100 100 75 1 µs 0.01 1E-6 50 25 Case Temperature, TC (°C) Limited by RDS On SinglePulse 10E-3 0 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Figure 19. Continuous Drain Current Derating vs. Case Temperature 1 50 0 150 Conditions: TJ ≤ 150 °C C3M0280090J Rev. 2 09-2021 16 0 0 2 4 6 8 10 Drain to Source Current, IDS (A) 12 14 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 16 Typical Performance 40 Switching Loss (µJ) 40 Conditions: TJ =25 °C VDD = 400 V IDS = 7.5 A VGS =-4/+15 V FWD =C3M0280090J L =201 μH EOn 30 Conditions: IDS = 7.5 A VDD = 400 V RG(ext) = 2.5 Ω VGS = -4/+15 V L = 201 μH FWD = C3M0280090J 30 ETotal Switching Loss (µJ) 50 20 10 ETotal EOn 20 10 EOff EOff 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 Switching Times (ns) 25 50 75 100 125 Junction Temperature, TJ (°C) Conditions: TJ = 25 °C VDD = 400 V IDS = 7.5 A VGS = -4/+15 V FWD = C3M0280090J 16 tr 12 td(off) 8 td(on) tf 4 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 0 C3M0280090J Rev. 2 09-2021 20 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 20 0 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic Q1 RG VGS= - 4V VDC Q2 RG D.U.T Figure 29. Clamped Inductive Switching Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0280090J Rev. 2 09-2021 Package Dimensions TO-263-7 Package 7L D2PAK Dim All Dimensions in Millimeters Min typ Max 4.300 4.435 4.570 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 A b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 D 9.025 9.075 9.125 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 e H 9 C3M0280090J Rev. 2 09-2021 1.27 15.043 16.178 17.313 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 Ø 0˚ 4˚ 8˚ Ø1 4.5˚ 5˚ 5.5˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0280090J Rev. 2 09-2021 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power