TSM7ND65CI
Taiwan Semiconductor
N-Channel Power MOSFET
650V, 7A, 1.35Ω
FEATURES
KEY PERFORMANCE PARAMETERS
● 100% UIS and Rg tested
PARAMETER
VALUE
UNIT
VDS
650
V
RDS(on) (max)
1.35
Ω
Qg
25
nC
● Advanced planar process
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● AC/DC LED Lighting
● Power Supply
ITO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Limit
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
7
4.4
A
IDM
28
A
PDTOT
50
W
Single Pulse Avalanche Energy
(Note 3)
EAS
270
mJ
Single Pulse Avalanche Current
(Note 3)
IAS
5.2
A
TJ, TSTG
- 55 to +150
°C
SYMBOL
Limit
UNIT
Junction to Case Thermal Resistance
RӨJC
2.5
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Pulsed Drain Current
Total Power Dissipation @ TC = 25°C
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: A1804
TSM7ND65CI
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
650
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2.5
2.9
3.8
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 650V, VGS = 0V
IDSS
--
--
1
µA
RDS(on)
--
1
1.35
Ω
Qg
--
25
--
Qgs
--
5.3
--
Qgd
--
8.1
--
Ciss
--
1124
--
Coss
--
68
--
Crss
--
3
--
Rg
--
1.1
2.2
td(on)
--
8
--
tr
--
19
--
td(off)
--
22
--
tf
--
23
--
Body-Diode Continuous Forward Current
IS
--
--
7
A
Body-Diode Pulsed Current
ISM
--
--
28
A
VSD
--
--
1.2
V
Drain-Source On-State Resistance
VGS = 10V, ID = 1.8A
(Note 4)
Dynamic
(Note 5)
Total Gate Charge
VDS = 520V, ID = 3.6A,
Gate-Source Charge
VGS = 10V
Gate-Drain Charge
Input Capacitance
VDS = 50V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
nC
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
VDD = 325V, RG = 5Ω,
Turn-Off Delay Time
ID =3.6A, VGS = 10V
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 4)
IS = 3.6A, VGS = 0V
Reverse Recovery Time
IS = 3.6A
trr
--
220
--
ns
Reverse Recovery Charge
dIF/dt = 100A/μs
Qrr
--
1.7
--
μC
Notes:
1.
Current limited by package
2.
Pulse width limited by the maximum junction temperature
3.
L = 20mH, IAS = 5.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.
o
ORDERING INFORMATION
PART NO.
TSM7ND65CI C0G
PACKAGE
PACKING
ITO-220
50pcs / Tube
2
Version: A1804
TSM7ND65CI
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
7
VGS=10V
VGS=7V
VGS=5V
6
ID, Drain Current (A)
ID, Drain Current (A)
7
5
4
3
VGS=4V
2
6
5
4
25℃
3
2
1
1
0
0
0
2
4
6
8
10
150℃
0
On-Resistance vs. Drain Current
4
6
8
Gate-Source Voltage vs. Gate Charge
VGS, Gate to Source Voltage (V)
3
2.5
2
VGS=10V
1.5
2
VGS, Gate to Source Voltage (V)
1
0.5
10
VDS=520V
ID=3.6A
8
6
4
2
0
0
0
1
2
3
4
5
6
0
7
5
10
15
20
25
ID, Drain Current (A)
Qg, Gate Charge (nC)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
RDS(on), Drain-Source On-Resistance (Ω)
RDS(on), Drain-Source On-Resistance
(Normalized)
RDS(on), Drain-Source On-Resistance (Ω)
VDS, Drain to Source Voltage (V)
-55℃
3
VGS=10V
ID=1.8A
2.5
2
1.5
1
0.5
0
-75
-50
-25
0
25
50
75
100 125 150
TJ, Junction Temperature (°C)
3
3
2.5
2
1.5
1
ID=1.8A
0.5
0
3
4
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
Version: A1804
TSM7ND65CI
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
2000
BVDSS (Normalized)
Drain-Source Breakdown Voltage
1.2
C, Capacitance (pF)
1800
1600
1400
CISS
1200
1000
800
600
400
200
COSS
CRSS
ID=250uA
1.1
1
0.9
0.8
0
0.1
1
10
100
-75
1000
-50
VDS, Drain to Source Voltage (V)
0
25
50
75
100 125 150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
100
10
10
IS, Reverse Drain Current (A)
ID, Drain Current (A)
-25
RDS(ON)
1
SINGLE PULSE
RӨJC=2.5°C/W
TC=25°C
0.1
0.01
1
25℃
150℃
-55℃
0.1
1
10
100
1000
0
VDS, Drain to Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forward Voltage (V)
Normalized Effective Transient
Thermal Impedance, ZӨJC
Normalized Thermal Transient Impedance, Junction-to-Case
10
SINGLE PULSE
RӨJC=2.5°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
0.01
0.1
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
1
10
t, Square Wave Pulse Duration (sec)
4
Version: A1804
TSM7ND65CI
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
ITO-220
MARKING DIAGRAM
TSC
7ND65
GYWWF
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
5
Version: A1804
TSM7ND65CI
Taiwan Semiconductor
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Version: A1804