C3M0040120D

C3M0040120D VDS 1200 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 66 A 40 mΩ N-Channel Enhancement Mode Features • • • • • Package 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • • • • • Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications • • • • Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Part Number Package Marking C3M0040120D TO 247-3 C3M0040120D Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 1200 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2 ID Continuous Drain Current ID(pulse) PD TJ , Tstg 66 48 A VGS = 15 V, TC = 25˚C VGS = 15 V, TC = 100˚C Pulsed Drain Current 100 A Pulse width tP limited by Tjmax Power Dissipation 326 W TC=25˚C, TJ = 175 ˚C -40 to +175 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0040120D Rev. 1, 10-2020 1.6mm (0.063”) from case for 10s M3 or 6-32 screw Fig. 19 Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 1.8 2.7 V VDS = VGS, ID = 9.5 mA V VDS = VGS, ID = 9.5 mA, TJ = 175ºC 50 μA VDS = 1200 V, VGS = 0 V nA VGS = 15 V, VDS = 0 V 3.6 2.2 1 IGSS Gate-Source Leakage Current 10 250 40 53.5 68 21 gfs Transconductance Ciss Input Capacitance 2900 Coss Output Capacitance 103 Crss Reverse Transfer Capacitance 5 Eoss Coss Stored Energy 60 20 EON Turn-On Switching Energy (SiC Diode FWD) 950 EOFF Turn Off Switching Energy (SiC Diode FWD) 346 EON Turn-On Switching Energy (Body Diode FWD) 1645 EOFF Turn Off Switching Energy (Body Diode FWD) 287 td(on) Turn-On Delay Time 15 Rise Time 60 Turn-Off Delay Time 25 tr td(off) tf RG(int) Fall Time 12 Internal Gate Resistance 3.5 Qgs Gate to Source Charge 32 Qgd Gate to Drain Charge 29 Qg Total Gate Charge 101 C3M0040120D Rev. 1, 10-2020 Test Conditions VGS = 0 V, ID = 100 μA Zero Gate Voltage Drain Current Drain-Source On-State Resistance Unit V 1200 IDSS RDS(on) 2 Parameter mΩ S pF VGS = 15 V, ID = 33.3 A VGS = 15 V, ID = 33.3 A, TJ = 175ºC VDS= 20 V, IDS= 33.3 A VDS= 20 V, IDS= 33.3 A, TJ = 175ºC VGS = 0 V, VDS = 1000 V f = 100 kHz Note Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VAC = 25 mV μJ Fig. 16 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 33.3 A, RG(ext) = 2.5 Ω, L= 99 μH, Tj = 175ºC Fig. 26 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 33.3 A, RG(ext) = 2.5 Ω, L= 99 μH, Tj = 175ºC Fig. 26 ns VDD = 800 V, VGS = -4 V/15 V RG(ext) = 2.5 Ω, ID = 33.3 A Timing relative to VDS, Inductive load L= 99 μH Fig. 27 Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -4 V/15 V ID = 33.3 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 5.5 V VGS = -4 V, ISD = 20 A, TJ = 25 °C 4.9 V VGS = -4 V, ISD = 20 A, TJ = 175 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 51 A VGS = -4 V, TC = 25˚C Note 1 Diode pulse Current 100 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 33.3 A, VR = 800 V dif/dt = 1150 A/µs, TJ = 175 °C Note 1 trr Reverse Recover time 45 ns Qrr Reverse Recovery Charge 697 nC Irrm Peak Reverse Recovery Current 26 A trr Reverse Recover time 53 ns Qrr Reverse Recovery Charge 624 nC Irrm Peak Reverse Recovery Current 17 A VGS = -4 V, ISD = 33.3 A, VR = 800 V dif/dt = 800 A/µs, TJ = 175 °C Thermal Characteristics Symbol 3 Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.46 RθJA Thermal Resistance From Junction to Ambient C3M0040120D Rev. 1, 10-2020 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 100 Drain-Source Current, IDS (A) 120 Conditions: Tj = -40 °C tp = < 200 µs VGS = 15V Conditions: Tj = 25 °C tp = < 200 µs VGS = 13V 100 Drain-Source Current, IDS (A) 120 80 VGS = 11V 60 40 VGS = 9V 20 VGS = 15V VGS = 13V VGS = 11V 80 60 VGS = 9V 40 20 VGS = 7V VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 10.0 0 12.0 0.0 2.0 4.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -40 ºC 100 Drain-Source Current, IDS (A) 2.0 Conditions: Tj = 175 °C tp = < 200 µs 8.0 10.0 12.0 Figure 2. Output Characteristics TJ = 25 ºC Conditions: IDS = 33.3 A VGS = 15 V tp < 200 µs 1.8 VGS = 15V VGS = 11V VGS = 13V 1.6 On Resistance, RDS On (P.U.) 120 6.0 Drain-Source Voltage, VDS (V) 80 VGS = 9V 60 40 VGS = 7V 20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 2.0 4.0 6.0 10.0 8.0 0.0 12.0 -50 -25 0 Drain-Source Voltage, VDS (V) 80 70 60 50 Tj = -40 °C 40 Tj = 25 °C 30 20 10 0 0 20 40 60 80 100 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 4 C3M0040120D Rev. 1, 10-2020 120 75 100 125 150 175 Conditions: IDS = 33.3 A tp < 200 µs 100 Tj = 175 °C On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 120 Conditions: VGS = 15 V tp < 200 µs 90 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 175 ºC 100 25 Junction Temperature, Tvj (°C) 140 80 VGS = 11 V 60 VGS = 13 V 40 VGS = 15 V 20 0 -50 -25 0 25 50 75 100 Junction Temperature, Tj (°C) 125 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 175 Typical Performance 160 120 TJ = 175 °C 100 TJ = 25 °C 80 -8 TJ = -40 °C 60 40 -4 -6 -2 0 VGS = -4 V VGS = 0 V -40 VGS = -2 V -60 -80 20 0 3 0 6 12 9 15 -4 Figure 8. Body Diode Characteristic at -40 ºC -2 0 0 Drain-Source Current, IDS (A) -20 VGS = -4 V VGS = 0 V -40 VGS = -2 V -60 -80 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -10 -8 VGS = -4 V 0 0 -40 VGS = 0 V -60 -80 Conditions: Tj = 175°C tp < 200 µs -120 Drain-Source Voltage VDS (V) -100 -120 Figure 10. Body Diode Characteristic at 175 ºC 16 Conditions: IDS = 33.3 A IGS = 50 mA VDS = 800 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) 3.0 Threshold Voltage, Vth (V) -2 -100 Conditons VGS = VDS IDS = 9.2 mA 3.5 -4 VGS = -2 V Figure 9. Body Diode Characteristic at 25 ºC 4.0 -6 -20 Drain-Source Current, IDS (A) -6 -120 Drain-Source Voltage VDS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -100 Conditions: Tj = -40°C tp < 200 µs Gate-Source Voltage, VGS (V) -10 0 -20 Drain-Source Current, IDS (A) 140 Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 µs 2.5 2.0 1.5 1.0 8 4 0 0.5 0.0 -50 -25 0 25 50 75 100 Junction Temperature TJ (°C) 125 Figure 11. Threshold Voltage vs. Temperature 5 C3M0040120D Rev. 1, 10-2020 150 175 -4 0 20 40 60 80 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 100 120 Typical Performance -8 -4 -6 -2 0 Drain-Source Current, IDS (A) VGS = 0 V 0 -20 VGS = 5 V -40 VGS = 10 V -60 VGS = 15 V -80 -10 -8 VGS = 0 V -4 -80 Conditions: Tj = 25 °C tp < 200 µs Drain-Source Voltage VDS (V) VGS = 10 V -40 -60 VGS = 15 V -80 Conditions: Tj = 175 °C tp < 200 µs Drain-Source Voltage VDS (V) 60 40 20 -100 0 -120 0 200 100 Crss 50 100 150 Drain-Source Voltage, VDS (V) Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 6 C3M0040120D Rev. 1, 10-2020 1000 1200 Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz 10000 Capacitance (pF) Capacitance (pF) Coss 0 800 Ciss 1000 1 600 100000 Ciss 10 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz 10000 -120 80 Figure 15. 3rd Quadrant Characteristic at 175 ºC 100000 -100 100 0 -20 VGS = 5 V -60 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 VGS = 0 V -20 VGS = 15 V Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -2 0 VGS = 5 V VGS = 10 V Figure 13. 3rd Quadrant Characteristic at -40 ºC -6 0 -40 -120 Drain-Source Voltage VDS (V) -8 -2 -100 Conditions: Tj = -40 °C tp < 200 µs -10 -4 -6 Drain-Source Current, IDS (A) -10 1000 Coss 100 10 200 1 Crss 0 200 400 600 800 Drain-Source Voltage, VDS (V) 1000 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1200V) 1200 Typical Performance 350 Conditions: TJ ≤ 175 °C 60 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 70 50 40 30 20 10 0 -55 -30 -5 20 45 70 95 120 Case Temperature, TC (°C) 145 250 200 150 100 50 0 170 Figure 19. Continuous Drain Current Derating vs. Case Temperature Conditions: TJ ≤ 175 °C 300 -50 0 -25 25 50 75 100 125 Case Temperature, TC (°C) 150 175 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 Limited by RDS On 0.5 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 100.00 0.3 100E-3 0.1 0.05 0.02 0.01 10E-3 SinglePulse 1E-3 10.00 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 10 µs 100 µs 1.00 1 ms 100 ms 0.10 0.01 1E-6 1 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 4 EOn 2 1 10 20 30 40 50 Drain to Source Current, IDS (A) 60 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 7 C3M0040120D Rev. 1, 10-2020 ETotal EOn 3 2 EOff 1 EOff 0 1000 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0040120D L = 99 μH ETotal Switching Loss (mJ) Switching Loss (mJ) 5 3 0 100 Figure 22. Safe Operating Area Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0040120D L = 99 μH 4 10 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) 5 1 µs 70 0 0 10 20 30 40 50 Drain to Source Current, IDS (A) 60 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 70 Typical Performance 5 3 ETotal 2 EOn 1 5 0 10 15 External Gate Resistor RG(ext) (Ohms) 20 Conditions: TJ = 25 °C VDD = 800 V IDS = 33.3 A VGS = -4/+15 V FWD = C3M0040120D Switching Times (ns) 100 80 EOn ETotal with Schottky EOn with Schottky 1 EOff with Schottky EOff 25 0 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 tr td(off) 60 td(on) 40 tf 20 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 8 C3M0040120D Rev. 1, 10-2020 20 175 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 120 1.5 ETotal 0.5 EOff 0 Conditions: IDS = 33.3 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -4/+15 V L = 99 μH FWD = C3M0040120D FWD = C4D20120A 2 Switching Loss (mJ) 4 Switching Loss (mJ) 2.5 Conditions: TJ = 25 °C VDD = 800 V IDS = 33.3 A VGS = -4/+15 V FWD = C3M0040120D L = 99 μH 25 Figure 28. Switching Times Definition 200 Test Circuit Schematic RG L VDC Q1 VGS= - 4 V KS CDC Q2 RG D.U.T KS Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 9 C3M0040120D Rev. 1, 10-2020 Package Dimensions POS Package TO-247-3 A T V U W Pinout Information: • • • Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Recommended Solder Pad Layout TO-247-3 10 C3M0040120D Rev. 1, 10-2020 Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 11 C3M0040120D Rev. 1 , 10-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power