BUK9540-100A,127

BUK95/9640-100A TrenchMOS™ logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9540-100A in SOT78 (TO-220AB) BUK9640-100A in SOT404 (D2-PAK). 2. Features ■ ■ ■ ■ TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications ■ Automotive and general purpose power switching: ◆ 12 V, 24 V, and 42 V loads ◆ Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb [1] g mb MBB076 2 MBK106 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1 3 MBK116 SOT404 (D2-PAK) s BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit - 100 V VDS drain-source voltage (DC) ID drain current (DC) Tmb = 25 °C; VGS = 5 V - 39 A Ptot total power dissipation Tmb = 25 °C - 158 W Tj junction temperature - 175 °C RDSon drain-source on-state resistance Tj = 25 °C; VGS = 5 V; ID = 25 A 34 40 mΩ Tj = 25 °C; VGS = 4.5 V; ID = 25 A - 43 mΩ Tj = 25 °C; VGS = 10 V; ID = 25 A 29 39 mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions Min Max Unit - 100 V - 100 V - ±15 V Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 - 39 A Tmb = 100 °C; VGS = 5 V; Figure 2 - 28 A RGS = 20 kΩ IDM drain current (peak value) Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 159 A Tmb = 25 °C; Figure 1 Ptot total power dissipation - 158 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode IDR reverse drain current Tmb = 25 °C - 39 A IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 159 A unclamped inductive load; ID = 39 A; VDS ≤ 100 V; VGS = 5 V; RGS = 50 Ω; starting Tmb = 25 °C - 182 mJ Avalanche ruggedness EDS(AL)S non-repetitive avalanche energy © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 2 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 03na19 120 03nh74 40 Pder ID (A) (%) 30 80 20 40 10 0 0 0 50 100 150 200 Tmb ( C) 25 50 75 100 125 150 175 200 Tmb (ºC) VGS ≥ 4.5 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 03nh72 ID (A) tp = 10 µs 102 RDSon = VDS / ID 100 µs 10 DC 1 ms 10 ms 100 ms 1 1 102 10 VDS (V) 103 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 3 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Figure 4 − − 0.95 K/W − 60 − K/W − 50 − K/W Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package mounted on a printed circuit board; minimum footprint; SOT404 package 7.1 Transient thermal impedance 03nh73 1 Zth(j-mb) δ = 0.5 (K/W) 0.2 10-1 0.1 0.05 0.02 10-2 Single Shot δ= P t tp T 10-3 10-6 tp T 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 4 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 100 - V Tj = −55 °C 89 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V Tj = 25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 34 40 mΩ Tj = 175 °C - - 100 mΩ VGS = 4.5 V; ID = 25 A - - 43 mΩ VGS = 10 V; ID = 25 A - 29 39 mΩ VGS = 5 V; VDD = 80 V; ID = 25 A; Figure 14 - 48 - nC - 5.4 - nC - 20 - nC - 2304 3072 pF - 222 266 pF - 151 207 pF - 20 - ns VDS = 100 V; VGS = 0 V IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-to-source charge Qgd gate-to-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 135 - ns td(off) turn-off delay time - 125 - ns tf fall time - 90 - ns Ld internal drain inductance from drain lead 6 mm from package to centre of die - 4.5 - nH from contact screw on mounting base to centre of die SOT78 - 3.5 - nH from upper edge of drain mounting base to centre of die SOT404 - 2.5 - nH from source lead to source bond pad - 7.5 - nH Ls internal source inductance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; RG = 10 Ω © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 5 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 37 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V 5.0 VGS = 10 (V) - ns - nC 03na64 (mΩ) 4.0 100 60 240 34 RDSon 03na66 120 ID (A) - 32 80 30 3.0 60 28 40 26 2.4 20 24 0 0 2 4 6 8 0 10 VDS (V) Tj = 25 °C; tp = 300 µs 10 VGS (V) 15 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03ng41 2.8 03na67 50 RDSon (mΩ) 45 5 a 2.6 2.4 VGS = 3.0 (V) 2.2 3.2 3.4 3.6 4.0 5.0 10 40 35 2 1.8 1.6 1.4 1.2 1 30 0.8 0.6 25 0.4 0.2 0 20 10 20 30 40 50 60 70 -60 -20 ID (A) Tj = 25 °C 60 100 140 180 Tj (ºC) R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data 20 Rev. 03 — 08 February 2002 6 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 03aa33 2.5 max (V) 03aa36 10-1 ID (A) 10-2 VGS(th) 2 typ min 10-3 1.5 typ max min 1 10-4 0.5 10-5 10-6 0 -60 0 60 120 180 0 1 2 Tj ( C) 3 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03na65 80 03na68 6000 C (pF) 5000 gfs (S) Ciss 60 4000 Coss 40 3000 Crss 2000 20 1000 0 0 0 10 20 30 ID (A) 40 Tj = 25 °C; VDS = 25 V 10-2 1 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data 10-1 Rev. 03 — 08 February 2002 7 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 03na61 80 03na63 5 VGS (V) ID (A) 4 60 VDD = 14 (V) VDD = 80 (V) 3 40 2 20 1 Tj = 175 ºC Tj = 25 ºC 0 0 0 1 2 3 VGS (V) 4 0 20 40 QG (nC) 60 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 03na62 100 IS (A) 80 60 40 Tj = 175 ºC Tj = 25 ºC 20 0 0.0 0.5 1.0 1.5 VSD (V) 2.0 VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 8 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC EIAJ 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 16. SOT78 (TO-220AB). © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 9 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-02-12 SOT404 Fig 17. SOT404 (D2-PAK) © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 10 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 10. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 11 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 11. Revision history Table 6: Revision history Rev Date 03 20020208 CPCN Description - Product data (9397 750 09162); third version; supersedes BUK95/9640-100A-02 of 01 May 2000. Modifications: • • Conversion from Lotus Manuscript to Databuilder II • Changes in Table 3 “Limiting values”: Thermal resistance from junction to mounting base (Rth(j-mb)) value changed from 1.1 K/W to 0.95 K/W in Table 4 “Thermal characteristics” – Drain current (ID) and reverse drain current (IDR) value changed from 37 A to 39 A – Peak drain current (IDM) and peak reverse drain current (IDRM) value changed from 149 A to 159 A. – Total power dissipation (Ptot) value changed from 138 W to 158 W. 02 20000501 - Product data; second version, supersedes BUK95/9640-100-01 of 01 December 1999. 01 19991201 - Produce data; initial version. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Product data Rev. 03 — 08 February 2002 12 of 14 BUK95/9640-100A Philips Semiconductors TrenchMOS™ logic level FET 12. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09162 Rev. 03 — 08 February 2002 13 of 14 Philips Semiconductors BUK95/9640-100A TrenchMOS™ logic level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 08 February 2002 Document order number: 9397 750 09162