TSM9N90ECZ C0G

TSM9N90E Taiwan Semiconductor N-Channel Power MOSFET 900V, 9.0A, 1.4Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% Avalanche Tested PARAMETER VALUE UNIT VDS 900 V RDS(on) (max) 1.4 Ω Qg 72 nC ● G-S ESD Protection Diode Embedded ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC en de d ● Halogen-free according to IEC 61249-2-21 definition APPLICATION ● Power Supply ● Lighting ITO-220 eco mm TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Drain-Source Voltage No tR Gate-Source Voltage SYMBOL Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) TC = 100°C (Note 2) TO-220 UNIT VDS 900 V VGS ±30 V 9.0 ID PDTOT A 5.7 IDM Total Power Dissipation @ TC = 25°C ITO-220 36 A 290 89 W Single Pulsed Avalanche Energy (Note 3) EAS 454 mJ Single Pulsed Avalanche Current (Note 3) IAS 9 A TJ, TSTG - 55 to +150 °C Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER SYMBOL TO-220 ITO-220 UNIT Junction to Case Thermal Resistance RӨJC 0.43 1.4 °C/W Junction to Ambient Thermal Resistance RӨJA 62.5 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. Document Number: DS_P0000159 1 Version: B15 TSM9N90E Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 900 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.0 -- 4.0 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 µA Zero Gate Voltage Drain Current VDS = 900V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID = 4.5A RDS(on) -- 1.13 1.4 Ω Qg VDS = 720V, ID = 9.0A, Gate-Source Charge -- Qgd -- 31 -- Ciss -- 2470 -- Coss -- 192 -- Crss -- 27 -- td(on) -- 52 -- tr -- 97 -- td(off) -- 212 -- tf -- 159 -- IS = 9.0A, VGS = 0V VSD -- -- 1.5 V VGS = 0V, IS = 9A, tfr -- 570 -- ns dIF/dt = 100A/us Qfr -- 6.6 -- μC (Note 6) Turn-On Delay Time VDD = 450V, Turn-On Rise Time RGEN = 25Ω, Turn-Off Delay Time ID = 9.0A, VGS = 10V, e co Turn-Off Fall Time Source-Drain Diode nC pF ns (Note 4) Forward On Voltage Reverse Recovery Time tR Reverse Recovery Charge Notes: en f = 1.0MHz mm Switching -- 11 VDS = 25V, VGS = 0V, Reverse Transfer Capacitance 72 -- Input Capacitance Output Capacitance -- Qgs VGS = 10V Gate-Drain Charge d Total Gate Charge de Dynamic (Note 5) 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 10.6mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C No o o 100% Eas Test Condition: L = 10.6mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS_P0000159 2 Version: B15 TSM9N90E Taiwan Semiconductor ORDERING INFORMATION PACKAGE PACKING TO-220 50pcs / Tube TSM9N90ECI C0G ITO-220 50pcs / Tube No tR e co mm en de d PART NO. TSM9N90ECZ C0G Document Number: DS_P0000159 3 Version: B15 TSM9N90E Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics en de d Output Characteristics Gate Charge No tR e co mm On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature Document Number: DS_P0000159 Source-Drain Diode Forward Voltage 4 Version: B15 TSM9N90E Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature en de d Drain Current vs. Case Temperature No tR e co mm Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (TO-220) Document Number: DS_P0000159 Maximum Safe Operating Area (ITO-220) 5 Version: B15 TSM9N90E Taiwan Semiconductor ELECTRICAL CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220) No tR e co mm en de d Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-220) Document Number: DS_P0000159 6 Version: B15 TSM9N90E Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) en de d TO-220 = Halogen Free = Year Code = Week Code (01~52) = Factory Code No tR e co G Y WW F mm MARKING DIAGRAM Document Number: DS_P0000159 7 Version: B15 TSM9N90E Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) en de d ITO-220 MARKING DIAGRAM mm = Halogen Free = Year Code = Week Code (01~52) = Factory Code No tR e co G Y WW F Document Number: DS_P0000159 8 Version: B15 TSM9N90E No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000159 9 Version: B15