C3M0065100K

C3M0065100K VDS 1000 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology 35 A RDS(on) 65 mΩ N-Channel Enhancement Mode Features • • • • • • • Package New C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant TAB Drain Benefits • • • • • Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency 1 D 2 3 4 S S G Gate (Pin 4) Driver Source (Pin 3) Applications • • • • Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Power Source (Pin 2) Part Number Package Marking C3M0065100K TO 247-4 C3M0065100K Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 1000 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25˚C Fig. 19 ID ID(pulse) Continuous Drain Current 35 22.5 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 90 A EAS Avalanche energy, Single pulse 110 mJ ID = 22A, VDD = 50V PD Power Dissipation 113.5 W TC=25˚C, TJ = 150 ˚C Operating Junction and Storage Temperature -55 to +150 ˚C 260 ˚C TJ , Tstg TL Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0065100K Rev. -, 09-2016 Pulse width tP limited by Tjmax 1.6mm (0.063”) from case for 10s Fig. 22 Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 1000 1.8 2.1 3.5 1.6 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 5 mA V VDS = VGS, ID = 5 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1000 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 65 78 RDS(on) Drain-Source On-State Resistance 90 14.3 gfs Transconductance Ciss Input Capacitance 660 Coss Output Capacitance 60 Crss Reverse Transfer Capacitance 4.0 Eoss Coss Stored Energy 16 EON Turn-On Switching Energy (Body Diode FWD) 190 EOFF Turn Off Switching Energy (Body Diode FWD) 40 td(on) Turn-On Delay Time 20 Rise Time 10 Turn-Off Delay Time 19 Fall Time 8 tr td(off) tf RG(int) Internal Gate Resistance Qgs Gate to Source Charge 9 Gate to Drain Charge 16 Qg Total Gate Charge 35 VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= 20 A, TJ = 150ºC Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV μJ Fig. 11 Fig. 4, 5, 6 VGS = 15 V, ID = 20A, TJ = 150ºC pF 4.7 Qgd VGS = 15 V, ID = 20 A mΩ S 11.9 Note Fig. 16 μJ VDS = 700 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 2.5Ω, L= 130 μH, TJ = 150ºC Fig. 26 ns VDD = 700 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27 Ω f = 1 MHz, VAC = 25 mV nC VDS = 700 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.8 V VGS = -4 V, ISD = 10 A 4.4 V VGS = -4 V, ISD = 10 A, TJ = 150 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 22 A VGS = -4 V Note 1 Diode pulse Current 90 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 20 A, VR = 700 V dif/dt = 4500 A/µs, TJ = 150 °C Note 1 trr Reverse Recover time 14 ns Qrr Reverse Recovery Charge 310 nC Irrm Peak Reverse Recovery Current 34 A Thermal Characteristics Symbol 2 Parameter Max. RθJC Thermal Resistance from Junction to Case 1.1 RθJA Thermal Resistance From Junction to Ambient 40 C3M0065100K Rev. -, 09-2016 Unit °C/W Test Conditions Note Fig. 21 Typical Performance Conditions: TJ = -55 °C tp < 200 µs 80 Conditions: TJ = 25 °C tp < 200 µs VGS = 15 V VGS = 13 V 60 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 80 VGS = 11 V 40 VGS = 9 V 20 VGS = 15 V VGS = 13 V 60 VGS = 11 V VGS = 9 V 40 20 VGS = 7 V VGS = 7 V 0 0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC Conditions: TJ = 150 °C tp < 200 µs Drain-Source Current, IDS (A) 70 2.0 VGS = 15V VGS = 11V 60 50 1.6 VGS = 9V 40 30 VGS = 7V 20 10 1.4 1.2 1.0 0.8 0.6 0.4 0.0 0.0 2.5 5.0 7.5 10.0 12.5 -50 15.0 -25 0 25 Figure 3. Output Characteristics TJ = 150 ºC Conditions: VGS = 15 V tp < 200 µs 100 TJ = 150 °C 80 TJ = -55 °C 60 TJ = 25 °C 100 125 150 Conditions: IDS = 20 A tp < 200 µs 140 On Resistance, RDS On (mOhms) 120 75 Figure 4. Normalized On-Resistance vs. Temperature 160 140 50 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) On Resistance, RDS On (Ohms) 15.0 0.2 0 40 20 120 100 VGS = 11 V VGS = 13 V 80 60 VGS = 15 V 40 20 0 0 0 10 20 30 40 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 12.5 Conditions: IDS = 20 A VGS = 15 V tp < 200 µs 1.8 VGS = 13V 10.0 Figure 2. Output Characteristics TJ = 25 ºC On Resistance, RDS On (P.U.) 80 7.5 Drain-Source Voltage, VDS (V) C3M0065100K Rev. -, 09-2016 50 60 -50 -25 0 25 50 75 100 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance -9 Conditions: VDS = 20 V tp < 200 µs -8 -7 -6 -5 -4 -3 -2 -1 0 0 40 VGS = -4 V TJ = 150 °C -10 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 50 30 TJ = 25 °C 20 TJ = -55 °C 10 -20 VGS = 0 V -30 VGS = -2 V -40 -50 -60 Conditions: TJ = -55°C tp < 200 µs 0 0 2 4 6 8 10 Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -6 -7 -5 -4 -3 -2 Figure 8. Body Diode Characteristic at -55 ºC -1 -10 0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 -10 -20 VGS = 0 V -30 VGS = -2 V -40 -50 0 -10 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = -4 V VGS = -4 V VGS = 0 V -20 -30 -40 VGS = -2 V -50 -60 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -60 Conditions: TJ = 150°C tp < 200 µs -70 -80 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature 4 Conditions: IDS = 20 A IGS = 100 mA VDS = 700 V TJ = 25 °C 12 -25 C3M0065100K Rev. -, 09-2016 -80 16 Conditons VGS = VDS IDS = 5 mA 2.5 -70 Figure 10. Body Diode Characteristic at 150 ºC 3.0 -50 -80 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -9 -70 150 8 4 0 -4 0 5 10 15 20 25 30 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 35 40 Typical Performance -8 -7 -6 -5 -4 -3 -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 -10 VGS = 0 V -20 VGS = 5 V -30 VGS = 10 V -40 VGS = 15 V -50 0 -10 VGS = 0 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 0 -20 VGS = 5 V VGS = 10 V -40 VGS = 15 V -50 -60 Conditions: TJ = -55 °C tp < 200 µs -60 Conditions: TJ = 25 °C tp < 200 µs -70 -80 Drain-Source Voltage VDS (V) -7 -6 -5 -4 -3 -2 -1 -70 -80 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -8 -30 Figure 14. 3rd Quadrant Characteristic at 25 ºC 35 0 0 30 -10 -20 -30 VGS = 5 V -40 VGS = 10 V VGS = 15 V -50 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) VGS = 0 V 25 20 15 10 -60 Conditions: TJ = 150 °C tp < 200 µs 5 -70 0 0 -80 Drain-Source Voltage VDS (V) 200 Figure 15. 3rd Quadrant Characteristic at 150 ºC 10000 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 Capacitance (pF) Capacitance (pF) 800 10000 Ciss Coss 100 Crss 10 600 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 400 Drain to Source Voltage, VDS (V) Ciss 100 Coss 10 Crss 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0065100K Rev. -, 09-2016 200 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Typical Performance 120 Conditions: TJ ≤ 150 °C 35 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 40 30 25 20 15 10 5 100 0 -50 -25 0 25 50 75 100 125 Conditions: TJ ≤ 150 °C 80 60 40 20 0 150 -50 Case Temperature, TC (°C) -25 0 25 50 75 100 125 150 Case Temperature, TC (°C) Figure 19. Continuous Drain Current Derating vs. Case Temperature Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 0.5 0.3 100E-3 0.1 0.05 0.01 1.00 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp SinglePulse 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 0.1 1 500 Conditions: TJ = 25 °C VDD = 500 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065100K L = 130 μH 250 200 Conditions: TJ = 25 °C VDD = 700 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065100K L = 130 μH 400 ETotal 150 EOn 100 10 100 1000 Figure 22. Safe Operating Area Switching Loss (uJ) 300 1 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) Switching Loss (uJ) 1 ms 100 ms 0.01 1E-6 100 µs 10.00 0.02 10E-3 EOff ETotal 300 EOn 200 EOff 100 50 0 0 0 10 20 30 40 Drain to Source Current, IDS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 500V) 6 10 µs Limited by RDS On Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 100.00 C3M0065100K Rev. -, 09-2016 50 0 10 20 30 40 Drain to Source Current, IDS (A) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 700V) 50 Typical Performance 500 Switching Loss (uJ) 400 Conditions: TJ = 25 °C VDD = 700 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0065100K L = 130 μH 400 ETotal 300 EOn 300 200 EOff 100 250 ETotal 200 EOn 150 100 EOff 50 0 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) 40 Conditions: TJ = 25 °C VDD = 700 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0065100K L = 130 μH 30 0 25 50 75 100 125 Figure 26. Clamped Inductive Switching Energy vs. Temperature td(off) td(on) tr 20 tf 10 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) Figure 28. Switching Times Definition Figure 27. Switching Times vs. RG(ext) 35 Conditons: VDD = 50 V Avalanche Current (A) 30 25 20 15 10 5 0 0 20 40 60 80 Time in Avalanche TAV (us) Figure 29. Single Avalanche SOA curve 7 C3M0065100K Rev. -, 09-2016 150 Junction Temperature, TJ (°C) Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Switching Times (ns) Conditions: IDS = 20 A VDD = 700 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065100K L = 130 μH 350 Switching Loss (uJ) 600 100 175 Test Circuit Schematic RG L VDC Q1 VGS= - 4 V KS CDC Q2 RG D.U.T KS Figure 30. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0065100K Rev. -, 09-2016 Package Dimensions Package TO-247-4L E E1 E4 E2 E3 BASE METAL SECTION "F-F", "G-G" AND "H-H" SCALE: NONE 9 C3M0065100K Rev. -, 09-2016 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. SYM A A1 A2 b' b b1 b2 b3 b4 b5 b6 c' c D D1 D2 E MILLIMETERS MIN 4.83 2.29 1.91 1.07 1.07 2.39 2.39 1.07 1.07 2.39 2.39 0.55 0.55 23.30 16.25 0.95 15.75 MAX 5.21 2.54 2.16 1.28 1.33 2.94 2.84 1.60 1.50 2.69 2.64 0.65 0.68 23.60 17.65 1.25 16.13 SYM E1 E2 E3 E4 e e1 N L L1 L2 øP Q S T W X MILLIMETERS MIN MAX 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43 2.54 BSC 5.08 BSC 4 17.31 17.82 3.97 4.37 2.35 2.65 3.51 3.65 5.49 6.00 6.04 6.30 17.5° REF. 3.5 ° REF. 4 ° REF. Recommended Solder Pad Layout 10 C3M0065100K Rev. -, 09-2016 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 11 C3M0065100K Rev -, 09-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power