TSM085N03PQ33 RGG

TSM085N03PQ33 Taiwan Semiconductor N-Channel Power MOSFET 30V, 52A, 8.5mΩ FEATURES PRODUCT SUMMARY ● Low RDS(ON) to minimize conductive Losses PARAMETER VALUE UNIT VDS 30 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in RDS(on) (max) accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition VGS = 10V 8.5 VGS = 4.5V 13 Qg mΩ 7.2 nC APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switch PDFN33 Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) TA = 25°C (Note 1) ID 52 13 A IDM 208 A Single Pulse Avalanche Current (Note 2) IAS 23 A Single Pulse Avalanche Energy (Note 2) EAS 26 mJ Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range PD PD 37 7 2.3 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Thermal Resistance – Junction to Case RӨJC 3.4 °C/W Thermal Resistance – Junction to Ambient RӨJA 53 °C/W THERMAL RESISTANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: D1608 TSM085N03PQ33 Taiwan Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1 1.6 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = 30V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 13A -- 6.2 8.5 (Note 3) VGS = 4.5V, ID = 13A -- 9 13 gfs -- 27 -- Qg -- 14.3 -- Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 5V, ID = 13A mΩ S (Note 4) VGS = 10V, VDS = 15V, Total Gate Charge ID = 13A Total Gate Charge Qg VGS = 4.5V, VDS = 15V, Gate-Source Charge ID = 13A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 15V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz, open drain 7.2 nC Qgs -- 2.6 -- Qgd -- 3.4 -- Ciss -- 817 -- Coss -- 155 -- Crss -- 96 -- Rg 0.8 2.8 5.6 td(on) -- 4.8 -- tr -- 12.5 -- td(off) -- 27.6 -- tf -- 8.2 -- VSD -- -- 1 V pF Ω (Note 4) Turn-On Delay Time Rise Time VGS = 10V, VDS = 15V, Turn-Off Delay Time ID = 15A, RG = 3.3Ω, Fall Time ns Source-Drain Diode Diode Forward Voltage (Note 3) VGS = 0V, IS = 13A Reverse Recovery Time IS = 13A, trr -- 13 -- ns Reverse Recovery Charge di/dt = 100A/μs Qrr -- 6.3 -- nC Notes: 1. Current limited by package. 2. L = 0.1mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 23A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM085N03PQ33 RGG PACKAGE PACKING PDFN33 5,000pcs / 13” Reel 2 Version: D1608 TSM085N03PQ33 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Normalized Vth vs. TJ On-Resistance vs. Junction Temperature 1.6 1.1 1 0.9 0.8 0.7 0.6 -50 0 50 100 150 RDS(on), Drain-Source On-Resistance (Normalized) Normalized Gate Threshold 1.2 1.4 1.2 1 0.8 0.6 -50 Capacitance vs. Drain-Source Voltage 100 150 VGS, Gate to Source Voltage (V) 10 1000 C, Capacitance (pF) 50 Gate-Source Voltage vs. Gate Charge 1200 CISS 800 600 400 COSS 200 CRSS 0 0 5 10 15 20 25 30 VDS=15V ID=13A 8 6 4 2 0 0 VDS, Drain to Source Voltage (V) 3 6 9 12 15 Qg, Gate Charge (nC) On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area, Junction-to-Case 0.04 1000 0.035 RDS(ON) 0.03 ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Ω) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (℃) 0.025 0.02 0.015 ID=13A 0.01 100 10 SINGLE PULSE RӨJC=3.4°C/W TC=25°C 0.005 1 0 3 4 5 6 7 8 9 0.1 10 1 10 100 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) 3 Version: D1608 TSM085N03PQ33 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=3.4°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 4 Version: D1608 TSM085N03PQ33 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN33 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 5 Version: D1608 TSM085N03PQ33 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: D1608