TSM120N06LCP ROG

TSM120N06LCP Taiwan Semiconductor N-Channel Power MOSFET 60V, 70A, 12mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 60 V RDS(on) VGS = 10V 12 (max) VGS = 4.5V 15 mΩ Qg 18 nC APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● Secondary Synchronous Rectification TO-252(DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current Pulsed Drain Current ID TA = 25°C (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 70 10 A IDM 280 A IAS EAS 20 60 A mJ PD PD 125 25 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1 °C/W Junction to Ambient Thermal Resistance RӨJA 49 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1602 TSM120N06LCP Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.7 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 9.7 12 -- 11 15 gfs -- 40 -- Qg -- 37 -- Qg -- 18 -- Qgs -- 6 -- Qgd -- 7.5 -- Ciss -- 2118 -- Coss -- 136 -- Crss -- 86 -- Rg 0.5 1.6 3.2 td(on) -- 6.4 -- tr -- 13.4 -- td(off) -- 25.6 -- tf -- 6.6 -- VSD -- -- 1 V VGS = 0V, VDS = 60V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 60V TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 10A (Note 3) VGS = 4.5V, ID = 10A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 5V, ID = 10A µA mΩ S (Note 4) VGS = 10V, VDS = 30V, Total Gate Charge ID = 10A Total Gate Charge VGS = 4.5V, VDS = 30V, Gate-Source Charge ID = 10A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 30V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 30V, Turn-Off Delay Time ID = 10A, RG = 2Ω, Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 10A Reverse Recovery Time IS = 10A , trr -- 17 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 13 -- nC Notes: 1. Current limited by package. 2. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 20A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM120N06LCP ROG PACKAGE PACKING TO-252(DPAK) 2,500pcs / 13” Reel 2 Version: A1602 TSM120N06LCP Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Transfer Characteristics 40 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Output Characteristics 40 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 30 20 VGS=3V 10 30 20 25℃ 10 150℃ 0 0 1 2 3 0 4 1 On-Resistance vs. Drain Current 3 4 Gate-Source Voltage vs. Gate Charge 10 0.016 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.014 VGS=4.5V 0.012 0.01 VGS=10V 0.008 0.006 0.004 VDS=30V ID=10A 8 6 4 2 0 0.002 0 10 20 30 0 40 10 On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=10A 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 30 40 On-Resistance vs. Gate-Source Voltage 2.2 2 20 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 0 100 125 150 0.04 0.035 0.03 0.025 0.02 0.015 ID=10A 0.01 0.005 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 3 Version: A1602 TSM120N06LCP Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 3000 2500 CISS 2000 1500 1000 CRSS 500 COSS 0 1.2 ID=1mA 1.1 1 0.9 0.8 0 10 20 30 40 50 60 -75 VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 1000 100 IS, Reverse Drain Current (A) ID, Drain Current (A) -50 RDS(ON) 100 10 SINGLE PULSE RӨJC=1°C/W TC=25°C 1 10 150℃ 1 25℃ -55℃ 0.1 0 1 10 100 0.2 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 SINGLE PULSE RӨJC=1°C/W 0.1 t, Square Wave Pulse Duration (sec) 4 Version: A1602 TSM120N06LCP Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252(DPAK) SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 120N06 YML Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 5 Version: A1602 TSM120N06LCP Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1602