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TSM210N02CX RFG

TSM210N02CX RFG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    SOT-23

  • 描述:

    MOSFET N-CHANNEL 20V 6.7A SOT23

  • 数据手册
  • 价格&库存
TSM210N02CX RFG 数据手册
TSM210N02CX 20V N-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate 2. Source 3. Drain Parameter Value Unit VDS 20 V Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 RDS(on) (max) VGS = 4.5V 21 VGS = 2.5V 25 VGS = 1.8V 32 Qg nC Block Diagram Ordering Information Ordering code 5.8 mΩ Package Packing TSM210N02CX RFG SOT-23 3kpcs / 7” Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V 6.7 A 4.2 A IDM 26.8 A PD 1.56 W TJ, TSTG - 55 to +150 °C Symbol Limit Unit RӨJA 80 °C/W Parameter Continuous Drain Current Pulsed Drain Current TC = 25°C TC = 100°C (Note 1) Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range ID Thermal Performance Parameter Thermal Resistance - Junction to Ambient 1/5 Version: B1811 TSM210N02CX 20V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 20 -- -- V -- 19 21 -- 22 25 -- 26 32 0.3 0.6 0.8 -- -- 1 -- -- 10 IGSS -- -- ±100 nA gfs -- 9.5 -- S Qg -- 5.8 -- Qgs -- 0.6 -- Qgd -- 2 -- Ciss -- 600 -- Coss -- 70 -- Crss -- 45 -- td(on) -- 5.0 -- tr -- 14.4 -- td(off) -- 30.0 -- tf -- 9.2 -- IS -- -- 6.7 A ISM -- -- 26.8 A VSD -- -- 1 V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA VGS = 4.5V, ID = 4A Drain-Source On-State Resistance VGS = 2.5V, ID = 3A RDS(ON) VGS = 1.8V, ID = 2A Gate Threshold Voltage VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current Gate Body Leakage VDS = 20V, VGS = 0V VDS = 16V, TJ = 125°C VGS = ±10V, VDS = 0V Forward Transconductance (Note 2) VDS = 10V, IS = 4A VGS(TH) IDSS mΩ V µA Dynamic (Note 2,3) Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 2,3) (Note 2,3) VDS = 10V, ID = 4A, VGS = 4.5V Input Capacitance VDS = 10V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time Turn-On Rise Time (Note 2,3) Turn-Off Delay Time Turn-Off Fall Time (Note 2,3) (Note 2,3) VDD = 10V, ID = 1A, VGS = 4.5V, RGEN =25Ω (Note 2,3) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode the MOSFET Forward Current Diode-Source Forward Voltage VGS = 0V, IS = 1A Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 3. Switching time is essentially independent of operating temperature. 2/5 Version: B1811 TSM210N02CX 20V N-Channel Power MOSFET Electrical Characteristics Curve Gate Charge ID, Continuous Drain Current (A) VGS, Gate to Source Voltage (V) Continuous Drain Current vs. T C Qg, Gate Charge (nC) TC, Case Temperature (°C) Threshold Voltage vs. Junction Temperature Normalized On Resistance (m) Normalized Gate Threshold Voltage (V) On-Resistance vs. Junction Temperature TJ, Junction Temperature (°C) Normalized Thermal Transient Impedance Curve ID, Drain Current (A) Normalized Thermal Response (RθJA) Maximum Safe Operating Area TJ, Junction Temperature (°C) Square Wave Pulse Duration (s) VDS, Drain to Source Voltage (V) 3/5 Version: B1811 TSM210N02CX 20V N-Channel Power MOSFET SOT-23 Mechanical Drawing Unit: Millimeters SUGGESTED PAD LAYOUT (Unit: Millimeters) Marking Diagram 21 = Device Code Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: B1811 TSM210N02CX 20V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: B1811
TSM210N02CX RFG 价格&库存

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TSM210N02CX RFG
    •  国内价格 香港价格
    • 3000+1.058323000+0.12654
    • 6000+1.049046000+0.12543
    • 9000+1.039769000+0.12432
    • 15000+1.0304715000+0.12321
    • 30000+1.0119130000+0.12099

    库存:6000

    TSM210N02CX RFG
    •  国内价格 香港价格
    • 3000+1.250053000+0.14947
    • 6000+1.141496000+0.13649
    • 9000+1.086159000+0.12987
    • 15000+1.0239715000+0.12244
    • 21000+0.9871521000+0.11803
    • 30000+0.9513530000+0.11375
    • 75000+0.9143075000+0.10932

    库存:97177

    TSM210N02CX RFG
    •  国内价格 香港价格
    • 1+5.491701+0.65663
    • 10+3.3739210+0.40341
    • 100+2.16004100+0.25827
    • 500+1.63493500+0.19549
    • 1000+1.465471000+0.17522

    库存:97177