TSM210N02CX
20V N-Channel Power MOSFET
SOT-23
Key Parameter Performance
Pin Definition:
1. Gate
2. Source
3. Drain
Parameter
Value
Unit
VDS
20
V
Note:
MSL 1 (Moisture Sensitivity Level)
per J-STD-020
RDS(on) (max)
VGS = 4.5V
21
VGS = 2.5V
25
VGS = 1.8V
32
Qg
nC
Block Diagram
Ordering Information
Ordering code
5.8
mΩ
Package
Packing
TSM210N02CX RFG
SOT-23
3kpcs / 7” Reel
Note: Halogen-free according to IEC 61249-2-21 definition
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
6.7
A
4.2
A
IDM
26.8
A
PD
1.56
W
TJ, TSTG
- 55 to +150
°C
Symbol
Limit
Unit
RӨJA
80
°C/W
Parameter
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
TC = 100°C
(Note 1)
Power Dissipation @ TC = 25°C
Operating Junction and Storage Temperature Range
ID
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
1/5
Version: B1811
TSM210N02CX
20V N-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
20
--
--
V
--
19
21
--
22
25
--
26
32
0.3
0.6
0.8
--
--
1
--
--
10
IGSS
--
--
±100
nA
gfs
--
9.5
--
S
Qg
--
5.8
--
Qgs
--
0.6
--
Qgd
--
2
--
Ciss
--
600
--
Coss
--
70
--
Crss
--
45
--
td(on)
--
5.0
--
tr
--
14.4
--
td(off)
--
30.0
--
tf
--
9.2
--
IS
--
--
6.7
A
ISM
--
--
26.8
A
VSD
--
--
1
V
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 4A
Drain-Source On-State Resistance
VGS = 2.5V, ID = 3A
RDS(ON)
VGS = 1.8V, ID = 2A
Gate Threshold Voltage
VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
Gate Body Leakage
VDS = 20V, VGS = 0V
VDS = 16V, TJ = 125°C
VGS = ±10V, VDS = 0V
Forward Transconductance
(Note 2)
VDS = 10V, IS = 4A
VGS(TH)
IDSS
mΩ
V
µA
Dynamic
(Note 2,3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2,3)
(Note 2,3)
VDS = 10V, ID = 4A,
VGS = 4.5V
Input Capacitance
VDS = 10V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 2,3)
(Note 2,3)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN =25Ω
(Note 2,3)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
Maximum Pulse Drain-Source Diode
the MOSFET
Forward Current
Diode-Source Forward Voltage
VGS = 0V, IS = 1A
Note:
1.
Pulse width limited by safe operating area
2.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
3.
Switching time is essentially independent of operating temperature.
2/5
Version: B1811
TSM210N02CX
20V N-Channel Power MOSFET
Electrical Characteristics Curve
Gate Charge
ID, Continuous Drain Current (A)
VGS, Gate to Source Voltage (V)
Continuous Drain Current vs. T C
Qg, Gate Charge (nC)
TC, Case Temperature (°C)
Threshold Voltage vs. Junction Temperature
Normalized On Resistance (m)
Normalized Gate Threshold Voltage (V)
On-Resistance vs. Junction Temperature
TJ, Junction Temperature (°C)
Normalized Thermal Transient Impedance Curve
ID, Drain Current (A)
Normalized Thermal Response (RθJA)
Maximum Safe Operating Area
TJ, Junction Temperature (°C)
Square Wave Pulse Duration
(s)
VDS, Drain to Source Voltage (V)
3/5
Version: B1811
TSM210N02CX
20V N-Channel Power MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
SUGGESTED PAD LAYOUT (Unit: Millimeters)
Marking Diagram
21 = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: B1811
TSM210N02CX
20V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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5/5
Version: B1811