C3M0120090J-TR

C3M0120090J VDS 900 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 22 A 120 mΩ N-Channel Enhancement Mode Features • • • • • • Package New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant TAB Drain Benefits • • • • Drain (TAB) Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency 1 2 3 4 5 G KS S S S 7 S Gate (Pin 1) Applications • • • • • 6 S Driver Source (Pin 2) Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Lighting Power Source (Pin 3,4,5,6,7) Part Number Package C3M0120090J 7L D2PAK Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -8/+18 V Absolute maximum values VGSop Gate - Source Voltage -4/+15 V Recommended operational values Note (1) VGS = 15 V, TC = 25˚C Fig. 19 ID Continuous Drain Current ID(pulse) PD TJ , Tstg TL 22 14 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 50 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 83 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to +150 ˚C 260 ˚C Operating Junction and Storage Temperature Solder Temperature Note (1): MOSFET can also safely operate at 0/+15 V 1 Value C3M0120090J Rev. - , 12-2015 1.6mm (0.063”) from case for 10s Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 900 1.8 2.1 3.5 1.6 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 3 mA V VDS = VGS, ID = 3 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 120 155 RDS(on) Drain-Source On-State Resistance 170 7.7 gfs Transconductance Ciss Input Capacitance 350 Coss Output Capacitance 40 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 9 EON Turn-On Switching Energy 49 EOFF Turn Off Switching Energy 16 td(on) Turn-On Delay Time tr td(off) tf RG(int) VGS = 15 V, ID = 15 A mΩ VGS = 15 V, ID = 15 A, TJ = 150ºC VDS= 15 V, IDS= 15 A S 6.7 Note VDS= 15 V, IDS= 15 A, TJ = 150ºC f = 1 MHz VAC = 25 mV μJ Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 600 V pF Fig. 11 Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 15 A, RG(ext) = 2.5Ω, L= 142 μH, TJ = 150ºC Fig. 26, 29 ns VDD = 400 V, VGS = -4 V/15 V ID = 15 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27, 29 Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 15 A Per IEC60747-8-4 pg 21 12.5 Rise Time 9 Turn-Off Delay Time 15 Fall Time 5 Internal Gate Resistance 16 Qgs Gate to Source Charge 4.8 Qgd Gate to Drain Charge 5.0 Qg Total Gate Charge 17.3 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Test Conditions Unit 4.8 V VGS = -4 V, ISD = 7.5 A 4.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 17 A VGS = -4 V Note (2) Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note (2) VGS = -4 V, ISD = 15 A, VR = 400 V dif/dt = 900 A/µs, TJ = 150 °C Note (2) trr Reverse Recover time 24 ns Qrr Reverse Recovery Charge 115 nC Irrm Peak Reverse Recovery Current 6.2 A Note (2): When using SiC Body Diode the maximum recommended VGS = -4V Thermal Characteristics Symbol 2 Parameter Max. RθJC Thermal Resistance from Junction to Case 1.5 RθJA Thermal Resistance From Junction to Ambient 40 C3M0120090J Rev. - , 12-2015 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 45 40 VGS = 15 V 35 VGS = 13 V 30 VGS = 11 V 25 20 VGS = 9 V 15 10 VGS = 7 V 5 VGS = 15 V Conditions: TJ = 25 °C tp = < 200 µs 40 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 45 Conditions: TJ = -55 °C tp = < 200 µs VGS = 13 V 35 VGS = 11 V 30 25 20 VGS = 9 V 15 10 VGS = 7 V 5 0 0 0 2 4 6 8 10 11 0 2 4 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 45 2.5 10 11 Conditions: IDS = 15 A VGS = 15 V tp < 200 µs VGS = 13 V 2.0 35 VGS = 11 V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 40 8 Figure 2. Output Characteristics TJ = 25 ºC VGS = 15 V Conditions: TJ = 150 °C tp = < 200 µs 6 Drain-Source Voltage, VDS (V) 30 25 VGS = 9 V 20 15 VGS = 7 V 10 1.5 1.0 0.5 5 0.0 0 0 2 4 6 8 10 -50 11 -25 0 Figure 3. Output Characteristics TJ = 150 ºC Conditions: VGS = 15 V tp < 200 µs 225 250 150 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) TJ = 150 °C 175 TJ = -55 °C 125 TJ = 25 °C 100 75 50 25 100 125 150 225 200 VGS = 11 V 175 150 VGS = 13 V 125 100 VGS = 15 V 75 50 25 0 0 0 5 10 15 20 25 30 35 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 75 Conditions: IDS = 15 A tp < 200 µs 275 200 50 Figure 4. Normalized On-Resistance vs. Temperature 300 250 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) C3M0120090J Rev. - , 12-2015 40 45 -50 -25 0 25 50 75 100 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 35 30 -7 -6 -5 -4 -3 -2 -1 0 0 -5 TJ = 150 °C 25 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -8 Conditions: VDS = 20 V tp < 200 µs TJ = 25 °C 20 TJ = -55 °C 15 10 VGS = -4 V -10 VGS = 0 V -15 -20 VGS = -2 V -25 -30 5 -35 Conditions: TJ = -55°C tp < 200 µs 0 0 2 4 6 8 10 12 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -6 -5 -4 -3 -2 Figure 8. Body Diode Characteristic at -55 ºC -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 -15 VGS = -2 V -20 -25 -30 -5 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -10 VGS = 0 V VGS = -4 V -10 VGS = 0 V -15 -20 VGS = -2 V -25 -30 -35 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -35 Conditions: TJ = 150°C tp < 200 µs -40 -45 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature 4 Conditions: IDS = 15 A IGS = 10 mA VDS = 400 V TJ = 25 °C 12 -25 C3M0120090J Rev. - , 12-2015 -45 16 Conditons VGS = VDS IDS = 3 mA -50 -40 Figure 10. Body Diode Characteristic at 150 ºC 3.0 2.5 0 0 -5 VGS = -4 V -45 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -8 -40 150 8 4 0 -4 0 4 8 12 16 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 20 Typical Performance -6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 -10 VGS = 5 V VGS = 10 V -20 VGS = 15 V VGS = 0 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V 0 -10 VGS = 5 V VGS = 10 V -20 VGS = 15 V -30 -30 Conditions: TJ = -55 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs -40 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -6 -5 -4 -3 -2 -1 -40 Drain-Source Voltage VDS (V) Figure 14. 3rd Quadrant Characteristic at 25 ºC 20 0 0 Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V VGS = 10 V -20 VGS = 15 V Stored Energy, EOSS (µJ) 15 -10 10 5 -30 Conditions: TJ = 150 °C tp < 200 µs 0 0 -40 Drain-Source Voltage VDS (V) 100 600 700 800 900 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) Capacitance (pF) 10 500 1000 Coss 100 400 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 300 Drain to Source Voltage, VDS (V) Figure 15. 3rd Quadrant Characteristic at 150 ºC 1000 200 Crss 100 Coss 10 Crss 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0120090J Rev. - , 12-2015 200 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 800 900 Typical Performance 90 Conditions: TJ ≤ 150 °C Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 25 20 15 10 5 0 -55 -30 -5 20 45 70 95 120 Conditions: TJ ≤ 150 °C 80 70 60 50 40 30 20 10 0 145 -55 Case Temperature, TC (°C) 70 95 120 0.1 100E-3 0.05 0.02 0.01 10E-3 SinglePulse Limited by RDS On 10.00 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 100 ms 1.00 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 ETotal 120 EOn 80 1000 80 ETotal 60 EOn 40 EOff EOff 40 100 Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0120090J L = 142 μH 100 Switching Loss (uJ) 160 10 Figure 22. Safe Operating Area 120 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0120090J L = 142 μH 1 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) 200 100 µs 1 ms 0.01 1E-6 145 10 µs Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 45 0.5 0.3 Switching Loss (uJ) 20 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1E-3 20 0 0 0 5 10 15 20 Drain to Source Current, IDS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 -5 Case Temperature, TC (°C) Figure 19. Continuous Drain Current Derating vs. Case Temperature 1 -30 C3M0120090J Rev. - , 12-2015 25 0 5 10 15 20 Drain to Source Current, IDS (A) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 25 Typical Performance 120 Switching Loss (uJ) 100 Conditions: TJ = 25 °C VDD = 400 V IDS = 15 A VGS = -4V/+15 V FWD = C3M0120090J L = 142 μH 80 90 EOn 60 EOff 30 ETotal 60 EOn 40 20 EOff 0 0 0 5 10 15 20 25 Conditions: TJ = 25 °C VDD = 400 V IDS = 15 A VGS = -4V/+15 V FWD = C3M0120090J L = 142 μH 25 20 25 50 75 100 125 td(off) td(on) 15 tr 10 tf 5 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0120090J Rev. - , 12-2015 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 30 0 Junction Temperature, TJ (°C) External Gate Resistor RG(ext) (Ohms) Times (ns) Conditions: IDS = 15 A VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0120090J L = 142 μH ETotal Switching Loss (uJ) 150 Figure 28. Switching Times Definition 175 Test Circuit Schematic Q1 RG VGS= - 4V VDC Q2 RG D.U.T Figure 29. Clamped Inductive Switching Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0120090J Rev. - , 12-2015 Package Dimensions Package 7L D2PAK Dim All Dimensions in Millimeters Min C3M0120090J Rev. - , 12-2015 Max 4.570 A 4.300 4.435 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 9.125 D 9.025 9.075 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 e 9 typ 1.27 H 15.043 16.178 17.313 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 Ø 0˚ 4˚ 8˚ Ø1 4.5˚ 5˚ 5.5˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0120090J Rev. -, 12-2015 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.: C3M0120090J C3M0120090J-TR