TSM230N06PQ56 RLG

TSM230N06PQ56 60V N-Channel Power MOSFET Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PDFN56 Parameter Value Unit VDS 60 V RDS(on) (max) Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 23 VGS = 4.5V 28 Qg Ordering Information ● VGS = 10V 28 mΩ nC Block Diagram Part No. Package Packing TSM230N06PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 44 A 28 A IDM 176 A EAS 42 mJ Power Dissipation @ TC = 25℃ PD 83 W Operating Junction Temperature TJ -55 to +150 ℃ TSTG -55 to +150 ℃ Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 1.5 Thermal Resistance - Junction to Ambient RӨJA 62 Tc = 25℃ Continuous Drain Current Pulsed Drain Current Tc = 100℃ (Note 1) Single Pulse Avalanche Energy (Note 2) Storage Temperature Range ID Thermal Performance Parameter 1/6 ℃/W Version: B1710 TSM230N06PQ56 60V N-Channel Power MOSFET Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 60 -- -- V -- 20 23 -- 23 28 1.2 1.8 2.5 -- -- 1 -- -- 10 IGSS -- -- ±100 nA gfs -- 9 -- S Qg -- 28 -- Qgs -- 3.5 -- Qgd -- 6.5 -- Ciss -- 1680 -- Coss -- 115 -- Crss -- 85 -- td(on) -- 7.2 -- VDD = 30V, ID = 1A, tr -- 38 -- VGS = 10V, RG =6Ω td(off) -- 34 -- tf -- 8.2 -- IS -- -- 44 A ISM -- -- 176 A VGS = 0V, IS = 1A VSD -- -- 1 V VGS = 0V, IS = 1A trr -- 19.6 -- ns dIF/dt = 100A/µs Qrr -- 14.2 -- nC Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 20A VGS = 4.5V, ID = 12A VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current Gate Body Leakage VDS = 60V, VGS = 0V VDS = 48V, TJ = 125℃ VGS = ±20V, VDS = 0V Forward Transconductance (Note 3) VDS = 10V, ID = 10A RDS(on) VGS(TH) IDSS mΩ V µA Dynamic (Note 3,4) Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 3,4) VDS = 30V, ID = 15A, VGS = 10V (Note 3,4) Input Capacitance VDS = 20V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time Turn-On Rise Time (Note 3,4) Turn-Off Delay Time Turn-Off Fall Time (Note 3,4) (Note 3,4) (Note 3,4) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode the MOSFET Forward Current Diode-Source Forward Voltage Reverse Recovery Time (Note 3) Reverse Recovery Charge (Note 3) Note: 1. Pulse width limited by safe operating area 2. L = 0.1mH, IAS = 29A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃ 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. 2/6 Version: B1710 TSM230N06PQ56 60V N-Channel Power MOSFET Electrical Characteristics Curve RDS(on) vs. Continuous Drain Current RDS(on), On Resistance (m) ID, Continuous Drain Current (A) Continuous Drain Current vs. T C ID, Continuous Drain Current (A) Capacitance Gate Charge C, Capacitance (pF) VGS, Gate to Source Voltage (V) TC, Case Temperature (℃) Qg, Gate Charge (nC) VDS, Drain to Source Voltage (V) Threshold Voltage vs. Junction Temperature Normalized On Resistance (m) Normalized Gate Threshold Voltage (V) On-Resistance vs. Junction Temperature TJ, Junction Temperature (℃) TJ, Junction Temperature (℃) 3/6 Version: B1710 TSM230N06PQ56 60V N-Channel Power MOSFET Electrical Characteristics Curve Maximum Safe Operating Area ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Thermal Transient Impedance Curve VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (s) 4/6 Version: B1710 TSM230N06PQ56 60V N-Channel Power MOSFET PDFN56 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: B1710 TSM230N06PQ56 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B1710