TSM3N90CH C5G

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.25 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This en de d advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features Low RDS(ON) 4.3Ω (Typ.) Low gate charge typical @ 17nC (Typ.) Low Crss typical @ 8.7pF (Typ.) mm ● ● ● Ordering Information Part No. Package Packing TO-251 TSM3N90CP ROG TO-252 2.5Kpcs / 13” Reel TO-220 50pcs / Tube TSM3N90CZ C0G 75pcs / Tube eco TSM3N90CH C5G TSM3N90CI C0G ITO-220 Note: “G” denotes for Halogen Free N-Channel MOSFET 50pcs / Tube Parameter tR Absolute Maximum Rating (Ta = 25oC unless otherwise noted) No Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc = 25ºC Tc = 100ºC Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit VDS 900 V VGS ±30 V 2.5 A 1.6 A ID Pulsed Drain Current * IDM 10 A Single Pulse Avalanche Energy (Note 2) EAS 10 mJ Avalanche Current (Repetitive) (Note 1) IAR 2.5 A Repetitive Avalanche Energy (Note 1) EAR 9.4 mJ dv/dt 4.5 V/ns Peak Diode Recovery dv/dt (Note 3) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range PTOT TJ TSTG 94 32 150 -55 to +150 94 W ºC o C Note: Limited by maximum junction temperature Document Number: DS_P0000085 1 Version: D15 TSM3N90 900V N-Channel Power MOSFET Thermal Performance Symbol IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case RӨJC 1.33 1.33 3.9 Thermal Resistance - Junction to Ambient RӨJA 110 Parameter Unit o C/W 62.5 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit 900 -- -- V -- 4.3 VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 1.25A RDS(ON) 5.1 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA Zero Gate Voltage Drain Current VDS = 900V, VGS = 0V Gate Body Leakage VGS = ±30V, VDS = 0V Forward Transfer Conductance VDS = 30V, ID = 1.25A 2.0 -- 4.0 V IDSS -- -- 10 uA IGSS -- -- ±100 nA gfs -- 3 -- S Qg -- 17 -- Qgs -- 2.4 -- Qgd -- 6.6 -- Ciss -- 748 -- Coss -- 55 -- Crss -- 8.7 -- td(on) -- 16 -- VGS = 10V, ID = 2.5A, tr -- 25 -- VDD = 450V, RG = 25Ω td(off) -- 63 -- tf -- 31 -- IS -- -- 2.5 en VGS(TH) VDS = 720V, ID = 2.5A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Turn-On Delay Time Turn-On Rise Time tR Turn-Off Delay Time f = 1.0MHz e co Reverse Transfer Capacitance Switching mm Dynamic Total Gate Charge d Drain-Source Breakdown Voltage de Static Turn-Off Fall Time nC pF nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in A ISM -- -- 10 A Diode Forward Voltage IS = 2.5A, VGS = 0V VSD -- -- 1.5 V Reverse Recovery Time VGS = 0V, IS =2.5A, tfr -- 355 -- nS dIF/dt = 100A/us Reverse Recovery Charge Qfr -1.8 -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: Max Rating EAS Test Condition: VDD = 50V, IAS=2A, L=5mH, RG =25Ω, Starting TJ=25ºC Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=2A, L=1mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤2.5A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature uC No Source Current (Pulse) the MOSFET Document Number: DS_P0000085 2 Version: D15 TSM3N90 900V N-Channel Power MOSFET tR e co mm Resistive Switching Test Circuit & Waveform en de d Gate Charge Test Circuit & Waveform No EAS Test Circuit & Waveform Document Number: DS_P0000085 3 Version: D15 TSM3N90 900V N-Channel Power MOSFET No tR e co mm en de d Diode Reverse Recovery Time Test Circuit & Waveform Document Number: DS_P0000085 4 Version: D15 TSM3N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Transfer Characteristics en de d Output Characteristics Gate Charge tR e co mm On-Resistance vs. Drain Current Source-Drain Diode Forward Voltage No On-Resistance vs. Junction Temperature Document Number: DS_P0000085 5 Version: D15 TSM3N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) BVDSS vs. Junction Temperature en de d Drain Current vs. Case Temperature Capacitance vs. Drain-Source Voltage tR e co mm Maximum Safe Operating Area No Maximum Safe Operating Area (ITO-220) Document Number: DS_P0000085 6 Version: D15 TSM3N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) en de d Normalized Thermal Transient Impedance, Junction-to-Ambient No tR e co mm Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220) Document Number: DS_P0000085 7 Version: D15 TSM3N90 900V N-Channel Power MOSFET tR Marking Diagram Unit: Millimeters e co mm en de d TO-220 Mechanical Drawing No Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr V =Aug S =May T =Jun U =Jul W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000085 8 Version: D15 TSM3N90 900V N-Channel Power MOSFET Unit: Millimeters tR e co mm en de d ITO-220 Mechanical Drawing Marking Diagram = Halogen Free = Year Code = Week Code by Calendar Year = Factory Code No G Y WW F Document Number: DS_P0000085 9 Version: D15 TSM3N90 900V N-Channel Power MOSFET tR Marking Diagram Unit: Millimeters e co mm en de d TO-251 Mechanical Drawing No Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr V =Aug S =May T =Jun U =Jul W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000085 10 Version: D15 TSM3N90 900V N-Channel Power MOSFET Unit: Millimeters e co Marking Diagram mm en de d TO-252 Mechanical Drawing No tR Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr V =Aug S =May T =Jun U =Jul W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000085 11 Version: D15 TSM3N90 No tR e co mm en de d 900V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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