TSM60NB099PW
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 38A, 99mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Super-Junction technology
PARAMETER
VALUE
UNIT
VDS
600
V
RDS(on) (max)
99
mΩ
Qg
62
nC
● High performance, small RDS(ON)*Qg figure of merit (FOM)
● High ruggedness performance
● 100% UIS and Rg tested
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● PFC stage
● Server/Telecom Power
● Charging Station
● Inverter
● Power Supply
TO-247
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
38
A
24
A
IDM
114
A
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
Total Power Dissipation @ TC = 25°C
PD
329
W
Single Pulse Avalanche Energy
(Note 3)
EAS
784
mJ
Single Pulse Avalanche Current
(Note 3)
IAS
5.6
A
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
0.38
°C/W
Junction to Ambient Thermal Resistance
RӨJA
42
°C/W
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: A1705
TSM60NB099PW
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
600
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
3
4
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
1
µA
VGS = 10V, ID = 11.7A
RDS(on)
--
86
99
mΩ
Qg
--
62
--
Qgs
--
17
--
Qgd
--
25
--
Ciss
--
2587
--
Coss
--
123
--
Crss
--
20
--
Rg
--
3.3
6.6
td(on)
--
18
--
tr
--
24
--
td(off)
--
87
--
tf
--
25
--
Body-Diode Continuous Forward Current
IS
--
--
38
A
Body-Diode Pulsed Current
ISM
--
--
114
A
VSD
--
--
1.4
V
Drain-Source On-State Resistance
(Note 4)
Dynamic
(Note 5)
Total Gate Charge
VDS = 480V, ID = 35A,
Gate-Source Charge
VGS = 10V
Gate-Drain Charge
Input Capacitance
VDS = 100V,VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
nC
pF
Ω
(Note 6)
Turn-On Delay Time
VDD = 300V,
Turn-On Rise Time
RGEN = 5Ω,
Turn-Off Delay Time
ID = 17.5A, VGS = 10V,
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 4)
IS = 35A, VGS = 0V
Reverse Recovery Time
IS = 17.5A
trr
--
342
--
ns
Reverse Recovery Charge
dIF/dt = 100A/μs
Qrr
--
5.3
--
μC
Notes:
1.
Current limited by package.
2.
Pulse width limited by the maximum junction temperature.
3.
L = 50mH, IAS = 5.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.
o
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM60NB099PW C1G
TO-247
25pcs / Tube
2
Version: A1705
TSM60NB099PW
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
45
45
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
27
ID, Drain Current (A)
ID, Drain Current (A)
36
18
9
36
27
25℃
18
9
VGS=5V
150℃
-55℃
0
0
0
2
4
6
8
0
2
On-Resistance vs. Drain Current
8
Gate-Source Voltage vs. Gate Charge
0.2
10
0.16
0.12
0.08
VGS=10V
0.04
VDS=480V
ID=35A
8
6
4
2
0
0
0
9
18
27
36
0
45
10
On-Resistance vs. Junction Temperature
RDS(on), Drain-Source On-Resistance (Ω)
VGS=10V
ID=11.7A
2
1.5
1
0.5
0
-75
-50
-25
0
25
50
75
30
40
50
60
70
On-Resistance vs. Gate-Source Voltage
3
2.5
20
Qg, Gate Charge (nC)
ID, Drain Current (A)
RDS(on), Drain-Source On-Resistance
(Normalized)
6
VGS, Gate to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on), Drain-Source On-Resistance (Ω)
VDS, Drain to Source Voltage (V)
4
100
125
150
TJ, Junction Temperature (°C)
3
0.3
0.25
0.2
0.15
ID=11.7A
0.1
0.05
0
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
Version: A1705
TSM60NB099PW
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
1.2
BVDSS (Normalized)
Drain-Source Breakdown Voltage
C, Capacitance (pF)
100000
10000
CISS
1000
COSS
100
CRSS
10
1
ID=1mA
1.1
1
0.9
0.8
0
100
200
300
400
500
600
-75
-50
VDS, Drain to Source Voltage (V)
Maximum Safe Operating Area, Junction-to-Case
0
25
50
75
100 125 150
Source-Drain Diode Forward Current vs. Voltage
1000
100
IS, Reverse Drain Current (A)
ID, Drain Current (A)
-25
TJ, Junction Temperature (°C)
RDS(ON)
100
10
1
SINGLE PULSE
RӨJC=0.38°C/W
TC=25°C
10
150℃
1
25℃
-55℃
0.1
0.1
1
10
100
0.2
1000
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forward Voltage (V)
VDS, Drain to Source Voltage (V)
Normalized Effective Transient
Thermal Impedance, ZӨJC
Normalized Thermal Transient Impedance, Junction-to-Case
10
SINGLE PULSE
RӨJC=0.38°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.001
0.00001
0.0001
0.001
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.01
0.1
1
t, Square Wave Pulse Duration (sec)
4
Version: A1705
TSM60NB099PW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-247
MARKING DIAGRAM
TSC
60NB099
GYWWF
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
5
Version: A1705
TSM60NB099PW
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular
purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: A1705
