TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 2A, 4.4Ω
FEATURES
KEY PERFORMANCE PARAMETERS
● Advanced planar process
● 100% avalanche tested
● Pb-free plating
PARAMETER
VALUE
UNIT
VDS
600
V
RDS(on) (max)
4.4
Ω
Qg
9.4
nC
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATION
● Power Supply
● Lighting
TO-251(IPAK)
TO-252(DPAK)
Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
2
1.35
A
IDM
8
A
Single Pulsed Avalanche Energy
(Note 3)
EAS
55
mJ
Single Pulsed Avalanche Current
(Note 3)
IAS
2
A
EAR
4.4
mJ
dv/dt
4.5
V/ns
PDTOT
44
W
TJ, TSTG
- 55 to +150
°C
(Note 2)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 4)
Total Power Dissipation @ TC = 25°C
Operating Junction and Storage Temperature Range
Document Number: DS_P0000070
1
Version: H1706
TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
RӨJC
2.87
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJA
UNIT
o
C/W
o
C/W
110
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Static
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
(Note 5)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
600
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.5
3.6
4.5
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
10
uA
Drain-Source On-State Resistance
VGS = 10V, ID = 1A
RDS(ON)
--
3.9
4.4
Ω
Forward Transfer Conductance
VDS = 40V, ID = 1A
gfs
--
1.5
--
S
Qg
--
9.4
--
Qgs
--
2.2
--
Qgd
--
4.7
--
Ciss
--
249
--
Coss
--
30.7
--
Crss
--
5
--
Rg
--
8.5
--
td(on)
--
9.1
--
tr
--
9.8
--
td(off)
--
17.4
--
tf
--
12.4
--
Dynamic
(Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 480V, ID = 2A,
VGS = 10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
VDS = 25V, VGS = 0V,
f = 1.0MHz
F = 1MHz, open drain
nC
pF
Ω
(Note 7)
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, ID = 2A,
Turn-Off Delay Time
VDD = 300V, RG =25Ω
Turn-Off Fall Time
Document Number: DS_P0000070
2
ns
Version: H1706
TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Source-Drain Diode
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
(Note 5)
Diode Forward Voltage
IS = 2A, VGS = 0V
VSD
--
0.9
1.4
V
Reverse Recovery Time
VGS = 0V, IS =2A,
trr
--
490
--
ns
Reverse Recovery Charge
dIF/dt = 100A/us
Qrr
--
0.8
--
μC
Source Current
Integral reverse diode
IS
--
--
2
A
Source Current (Pulse)
in the MOSFET
ISM
--
--
8
A
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
o
3. L = 25mH, IAS = 2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C.
100% Eas Test Condition: L = 25mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25ºC.
5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
6. For DESIGN AID ONLY, not subject to production testing.
7. Switching time is essentially independent of operating temperature.
Document Number: DS_P0000070
3
Version: H1706
TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM2NB60CH C5G
PACKAGE
PACKING
TO-251 (IPAK)
75pcs / Tube
TSM2NB60CP ROG
TO-252 (DPAK)
2,500pcs / 13” Reel
Document Number: DS_P0000070
4
Version: H1706
TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Document Number: DS_P0000070
Source-Drain Diode Forward Current vs. Voltage
5
Version: H1706
TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
101
100
10-1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-2
10-3
10-4
10-6
10-5
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (s)
Document Number: DS_P0000070
6
Version: H1706
TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-251(IPAK)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000070
7
Version: H1706
TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252(DPAK)
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000070
8
Version: H1706
TSM2NB60CP
TSM2NB60CH
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000070
9
Version: H1706
