TSM060N03ECP
30V N-Channel Power MOSFET
TO-252
(DPAK)
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
30
V
RDS(on) (max)
VGS = 10V
6
VGS = 4.5V
9
Qg
Features
●
●
mΩ
11.1
nC
Block Diagram
Fast switching
G-S ESD Protection Diode Embedded
Ordering Information
Ordering code
Package
Packing
TSM060N03ECP ROG
TO-252
2.5kpcs / 13” Reel
Note: Halogen-free according to IEC 61249-2-21 definition
N-Channel MOSFET with ESD protection
Absolute Maximum Ratings (TC=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
70
A
44
A
IDM
280
A
EAS
88
mJ
IAS
42
A
54
W
0.43
W/ºC
TJ
150
ºC
TSTG
-55 to +150
Symbol
Limit
TC=25ºC
Continuous Drain Current
Pulsed Drain Current
ID
TC=100ºC
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Single Pulse Avalanche Current
(Note 2)
o
Total Power Dissipation
@ TC=25 C
PD
o
Derate above TC=25 C
Operating Junction Temperature
Storage Temperature Range
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
1/5
2.3
62
Unit
o
C/W
o
C/W
Version: B1807
TSM060N03ECP
30V N-Channel Power MOSFET
Electrical Specifications (TC=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
30
--
--
V
--
4.8
6
--
6.5
9
1
1.6
2.5
--
--
1
--
--
10
IGSS
--
--
±10
µA
gfs
--
12.5
--
S
Qg
--
11.1
--
Qgs
--
1.85
--
Qgd
--
6.8
--
Ciss
--
1210
--
Coss
--
190
--
Crss
--
100
--
Rg
--
2.5
--
td(on)
--
7.5
--
tr
--
14.5
--
td(off)
--
35.2
--
tf
--
9.6
--
Continuous Drain-Source Diode
IS
--
--
70
A
Pulse Drain-Source Diode
ISM
--
--
280
A
VSD
--
--
1
V
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS = 0V, ID = 250µA
VGS = 10V, ID = 20A
RDS(ON)
VGS = 4.5V, ID = 10A
VDS = VGS, ID = 250µA
VGS(TH)
VDS = 30V, VGS = 0V
IDSS
VDS = 24V, TJ = 125ºC
Gate Body Leakage
VGS = ±20V, VDS = 0V
Forward Transconductance
VDS = 10V, ID = 10A
mΩ
V
µA
Dynamic
Total Gate Charge
(Note 3,4)
Gate-Source Charge
Gate-Drain Charge
(Note 3,4)
(Note 3,4)
VDS = 15V, ID = 20A,
VGS = 4.5V
Input Capacitance
VDS = 25V, VGS = 0V,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
nC
pF
Ω
Switching
Turn-On Delay Time
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 3,4)
(Note 3,4)
VDD=15V , VGS=10V ,
RG=3.3, ID=-15A
(Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Diode-Source Forward Voltage
VGS = 0V, IS = 1A
Note:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
o
2. VDD=25V,VGS=10V,L=0.1mH,IAS=42A.,RG=25,Starting TJ=25 C
3. The data tested by pulsed , pulse width ≤300µs, duty cycle ≤2%
4. Essentially independent of operating temperature.
2/5
Version: B1807
TSM060N03ECP
30V N-Channel Power MOSFET
Electrical Characteristics Curve
Normalized RDSON vs. TJ
Normalized On Resistance
ID , Continuous Drain Current (A)
Continuous Drain Current vs. Tc
o
o
TJ , Junction Temperature ( C)
TC , Case Temperature ( C)
Gate Charge Waveform
VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage
(V)
Normalized Vth vs. TJ
o
Qg , Gate Charge (nC)
Normalized Transient Impedance
Maximum Safe Operation Area
ID , Drain Current (A)
Normalized Thermal Response
TJ , Junction Temperature ( C)
VDS , Drain to Source Voltage
(V)
Square Wave Pulse Duration (s)
3/5
Version: B1807
TSM060N03ECP
30V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
SUGGESTED PAD LAYOUT (Unit: Millimeters)
Marking Diagram
Y
M
060N3E
YML
L
= Year Code
= Month Code
O =Jan P =Feb
S =May T =Jun
W =Sep X =Oct
= Lot Code (1~9, A~Z)
Q =Mar
U =Jul
Y =Nov
4/5
R =Apr
V =Aug
Z =Dec
Version: B1807
TSM060N03ECP
30V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: B1807
