TSM3457
30V P-Channel MOSFET
SOT-26
Key Parameter Performance
Pin Definition:
1. Drain
6. Drain
2. Drain
5. Drain
3. Gate
4. Source
Parameter
Value
Unit
VDS
-30
V
RDS(on) (max)
VGS = -10V
60
VGS = -4.5V
100
Qg
Features
mΩ
9.52
nC
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Ordering Information
Part No.
Package
Packing
TSM3457CX6 RFG
SOT-26
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
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