C3M0160120J

C3M0160120J VDS 1200 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology 17 A RDS(on) 160 mΩ N-Channel Enhancement Mode Features • • • • • • • Package 3rd generation SiC MOSFET technology Low impedance package with driver source pin 7mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant TAB Drain Benefits • • • • • 1 2 3 4 5 G KS S S S 6 S 7 S Drain (TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Gate (Pin 1) Driver Source (Pin 2) Applications • • • • Renewable energy High voltage DC/DC converters Switch Mode Power Supplies UPS Power Source (Pin 3,4,5,6,7) Part Number Package Marking C3M0160120J TO-263-7 C3M0160120J Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit 1200 V VGS = 0 V, ID = 100 μA Test Conditions Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25˚C Fig. 19 ID ID(pulse) PD TJ , Tstg TL Continuous Drain Current 17 12 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 34 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 90 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to +150 ˚C 260 ˚C Operating Junction and Storage Temperature Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0160120J Rev. A, 04-2020 1.6mm (0.063”) from case for 10s Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Min. Typ. Max. Unit V VGS = 0 V, ID = 100 μA 2.8 3.6 V VDS = VGS, ID = 2.33 mA V VDS = VGS, ID = 2.33 mA, TJ = 150ºC 1200 1.8 2.2 Test Conditions IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 160 208 RDS(on) Drain-Source On-State Resistance 256 5.2 gfs Transconductance Ciss Input Capacitance 632 Coss Output Capacitance 39 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy EON Turn-On Switching Energy (Body Diode FWD) 64 EOFF Turn-Off Switching Energy (Body Diode FWD) 13 td(on) Turn-On Delay Time 11 Rise Time 8 Turn-Off Delay Time 14 Fall Time 8 Internal Gate Resistance 8 Qgs Gate to Source Charge 11 Qgd Gate to Drain Charge 5 Qg Total Gate Charge 24 tr td(off) tf RG(int) VGS = 15 V, ID = 8.5 A mΩ VGS = 15 V, ID = 8.5 A, TJ = 150ºC VDS= 20 V, IDS= 8.5 A S 4.9 Note VDS= 20 V, IDS= 8.5 A, TJ = 150ºC f = 1 MHz 22.5 VAC = 25 mV μJ Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 1000 V pF Fig. 11 Fig. 16 μJ VDS = 800 V, VGS = -4 V/15 V, ID = 8.5 A, RG(ext) = 2.5 Ω, L= 336 μH Fig. 26, 29 ns VDD = 800 V, VGS = -4 V/15 V ID = 8.5 A, RG(ext) = 0 Ω, Timing relative to VDS Inductive load Fig. 27, 28, 29 Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -4 V/15 V ID = 8.5 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions 4.4 V VGS = -4 V, ISD = 3 A 4.0 V VGS = -4 V, ISD = 3 A, TJ = 150 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 17 A VGS = -4 V Note 1 Diode pulse Current 34 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 8.5 A, VR = 800 V dif/dt = 8925 A/µs, TJ = 25 °C Note 1, Fig. 29 VGS = -4 V, ISD = 8.5 A, VR = 800 V dif/dt = 2020 A/µs, TJ = 25 °C Note 1, Fig. 29 trr Reverse Recover time 5 ns Qrr Reverse Recovery Charge 65 nC Irrm Peak Reverse Recovery Current 19 A trr Reverse Recover time 7 ns Qrr Reverse Recovery Charge 32 nC Irrm Peak Reverse Recovery Current 8 A Thermal Characteristics Symbol RθJC 2 Parameter Typ. Unit Thermal Resistance from Junction to Case 1.38 °C/W C3M0160120J Rev. A, 04-2020 Test Conditions Note Fig. 21 Typical Performance 40 35 VGS = 15V 30 25 20 VGS = 11V 15 10 VGS = 9V 5 VGS = 15V Conditions: Tj = 25 °C tp = < 200 µs 35 VGS = 13V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 40 Conditions: Tj = -55 °C tp = < 200 µs VGS = 13V 30 25 VGS = 11V 20 15 VGS = 9V 10 VGS = 7V 5 VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 10.0 0 12.0 0.0 2.0 4.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 40 1.6 VGS = 15V VGS = 13V VGS = 11V 25 20 VGS = 9V 15 10 VGS = 7V 5 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 Figure 3. Output Characteristics TJ = 150 ºC 400 -50 -25 0 75 100 Tj = 150 °C 250 200 Tj = -55 °C 150 Tj = 25 °C 100 50 5 10 15 20 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures C3M0160120J Rev. A, 04-2020 25 125 150 Conditions: IDS = 8.5 A tp < 200 µs 400 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 50 450 300 0 25 Junction Temperature, Tj (°C) Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 µs 350 3 12.0 1.4 Drain-Source Voltage, VDS (V) 0 10.0 Conditions: IDS = 8.5 A VGS = 15 V tp < 200 µs 1.8 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 2.0 30 8.0 Figure 2. Output Characteristics TJ = 25 ºC Conditions: Tj = 150 °C tp = < 200 µs 35 6.0 Drain-Source Voltage, VDS (V) 30 350 300 VGS = 11 V 250 VGS = 13 V 200 VGS = 15 V 150 100 50 0 -50 -25 0 25 50 75 Junction Temperature, Tj (°C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 40 30 TJ = 150 °C 25 20 TJ = 25 °C TJ = -55 °C 15 -8 10 -6 -4 -2 0 0 -5 VGS = -4 V Drain-Source Current, IDS (A) 35 Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 µs VGS = 0 V -10 VGS = -2 V -15 -20 -25 -30 5 0 0 4 2 6 8 12 10 Conditions: Tj = -55°C 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -6 -4 Figure 8. Body Diode Characteristic at -55 ºC -2 0 Drain-Source Current, IDS (A) VGS = -4 V 0 -5 VGS = 0 V -10 VGS = -2 V -15 -20 -25 -10 -8 -4 -6 Drain-Source Current, IDS (A) -8 -40 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -10 VGS = -4 V -2 0 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -10 VGS = -2 V -15 -20 -25 -30 Conditions: Tj = 150°C tp < 200 µs -35 -40 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC 4.0 2.5 2.0 1.5 1.0 0.5 -25 0 25 50 75 Junction Temperature TJ (°C) 100 125 Figure 11. Threshold Voltage vs. Temperature 4 16 C3M0160120J Rev. A, 04-2020 -40 150 Conditions: IDS = 8.5 A IGS = 50 mA VDS = 800 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 3.0 -50 -35 Figure 10. Body Diode Characteristic at 150 ºC Conditons VGS = VDS IDS = 2.33 mA 3.5 0 -5 VGS = 0 V -30 0.0 -35 8 4 0 -4 0 5 10 15 20 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 25 Typical Performance -8 -6 -4 Drain-Source Current, IDS (A) VGS = 0 V -2 0 0 -5 VGS = 5 V -10 -15 VGS = 10 V -20 VGS = 15 V -25 -10 -8 -6 -4 VGS = 0 V Drain-Source Current, IDS (A) -10 -2 0 -5 VGS = 5 V -10 VGS = 10 V -25 -30 Conditions: Tj = 25 °C tp < 200 µs -35 -40 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -10 -8 -6 -4 -2 0 25 VGS = 5 V VGS = 10 V -15 VGS = 15 V -20 -25 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -10 -30 Conditions: Tj = 150 °C tp < 200 µs 20 15 10 5 -35 0 -40 Drain-Source Voltage VDS (V) 0 200 Coss 400 600 800 Drain to Source Voltage, VDS (V) Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 10 Ciss 1000 100 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 10 0 50 100 Drain-Source Voltage, VDS (V) Crss 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 1200 Coss Crss 1 1000 Figure 16. Output Capacitor Stored Energy Capacitance (pF) Capacitance (pF) Figure 15. 3rd Quadrant Characteristic at 150 ºC 100 -40 30 0 -5 Ciss -35 Figure 14. 3rd Quadrant Characteristic at 25 ºC VGS = 0 V 1000 -15 -20 VGS = 15 V -30 Conditions: Tj = -55 °C tp < 200 µs 0 C3M0160120J Rev. A, 04-2020 200 1 0 200 400 600 800 Drain-Source Voltage, VDS (V) 1000 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1200V) 1200 Typical Performance 100 Conditions: TJ ≤ 150 °C 16 14 12 10 8 6 4 2 0 -55 -30 -5 20 45 70 Case Temperature, TC (°C) 95 120 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 60 50 40 30 20 10 -55 -30 0.1 0.05 0.02 0.01 SinglePulse 1E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 Switching Loss (uJ) 60 50 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 6 8 10 Drain to Source Current, IDS (A) 12 14 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 C3M0160120J Rev. A, 04-2020 100 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0160120J L = 336 μH 100 1000 ETotal 75 EOn 50 25 EOff 10 4 10 Drain-Source Voltage, VDS (V) EOn 20 2 10 µs 0.10 ETotal 30 0 145 Figure 22. Safe Operating Area 40 0 120 95 1.00 1 Switching Loss (uJ) 70 70 1 ms 125 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0160120J L = 336 μH 45 100 ms Figure 21. Transient Thermal Impedance (Junction - Case) 80 20 Case Temperature, TC (°C) 100 µs 0.01 10E-6 -5 Limited by RDS On 10.00 0.3 10E-3 70 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 0.5 100E-3 80 0 145 Figure 19. Continuous Drain Current Derating vs. Case Temperature 1 Conditions: TJ ≤ 150 °C 90 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 18 16 0 EOff 0 2 4 6 8 10 Drain to Source Current, IDS (A) 12 14 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 16 Typical Performance 180 160 140 Switching Loss (uJ) 150 Conditions: TJ = 25 °C VDD = 800 V IDS = 8.5 A VGS = -4/+15 V FWD = C3M0160120J L = 336 μH 120 EOn 100 80 60 40 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 Conditions: TJ = 25 °C VDD = 800 V IDS = 8.5 A VGS = -4/+15 V FWD = C3M0160120J Switching Times (ns) 25 20 ETotal EOn 75 50 EOff 25 0 0 25 50 75 100 125 Junction Temperature, TJ (°C) td(off) td(on) 15 tr tf 10 5 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0160120J Rev. A, 04-2020 20 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 30 100 25 EOff 20 Conditions: IDS = 8.5 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -4/+15 V L = 336 μH FWD = C3M0160120J 125 ETotal Switching Loss (uJ) 200 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic RG L VDC Q1 VGS= - 4 V KS CDC Q2 RG D.U.T KS Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0160120J Rev. A, 04-2020 Package Dimensions Package 7L D2PAK Dim All Dimensions in Millimeters Min typ Max 4.300 4.435 4.570 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 A b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 D 9.025 9.075 9.125 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 H 15.043 16.178 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 Ø 0˚ 4˚ 8˚ Ø1 4.5˚ 5˚ 5.5˚ e 9 C3M0160120J Rev. A, 04-2020 1.27 17.313 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0160120J Rev. A, 04-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power