TQM033NB04CR
Taiwan Semiconductor
AUTOMOTIVE N-Channel 40V 175°C MOSFET
FEATURES
PRODUCT SUMMARY
● AEC-Q101 Qualified
PARAMETER
VALUE
UNIT
VDS
40
V
● 100% UIS and Rg Tested
● 175°C Operating Junction Temperature
● Wettable Flank Package
RDS(on) (max)
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
VGS = 10V
3.3
VGS = 7V
5.1
mΩ
Qg
87
nC
APPLICATIONS
● 12V Automotive Systems
● Solenoid and Motor Control
● Automotive Transmission Control
● DC-DC Converters
PDFN56U
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25°C
(Note 1)
TA = 25°C
Pulsed Drain Current
ID
121
21
A
IDM
484
A
Single Pulse Avalanche Current
(Note 2)
IAS
36
A
Single Pulse Avalanche Energy
(Note 2)
EAS
194
mJ
Total Power Dissipation
Total Power Dissipation
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
PD
PD
107
36
3.1
W
W
1
TJ, TSTG
- 55 to +175
°C
SYMBOL
MAXIMUM
UNIT
Thermal Resistance – Junction to Case
RӨJC
1.4
°C/W
Thermal Resistance – Junction to Ambient
RӨJA
48
°C/W
THERMAL RESISTANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is
2
determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper.
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Version: A2003
TQM033NB04CR
Taiwan Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
40
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
1.8
2.5
3.8
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
--
--
1
--
--
100
--
--
500
--
2.2
3.3
--
3.8
5.7
VGS = 0V, VDS = 40V
VGS = 0V, VDS = 40V
Drain-Source Leakage Current
IDSS
TJ = 125°C
VGS = 0V, VDS = 40V
TJ = 175°C
VGS = 10V, ID = 21A
VGS = 10V, ID = 21A,
Drain-Source On-State Resistance
TJ = 125°C
(Note 3)
VGS = 10V, ID = 21A,
--
4.8
7.3
--
2.5
5.1
gfs
--
68
--
Qg
--
87
--
Qg
--
64
--
Qgs
--
20
--
Qgd
--
23
--
Ciss
--
4917
--
Coss
--
484
--
Crss
--
276
--
Rg
0.5
1.7
3.4
td(on)
--
10
--
tr
--
24
--
td(off)
--
49
--
tf
--
23
--
VSD
--
--
1
V
VGS = 7V, ID = 17A
Forward Transconductance
Dynamic
VDS = 10V, ID = 21A
mΩ
RDS(on)
TJ = 175°C
(Note 3)
µA
S
(Note 4)
VGS = 10V, VDS = 20V,
Total Gate Charge
ID = 21A
Total Gate Charge
VGS = 7V, VDS = 20V,
Gate-Source Charge
ID = 17A
Gate-Drain Charge
Input Capacitance
VGS = 0V, VDS = 20V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
f = 1.0MHz
nC
pF
Ω
(Note 4)
Turn-On Delay Time
Rise Time
VGS = 10V, VDS = 20V,
Turn-Off Delay Time
ID = 21A, RG = 2Ω
Fall Time
ns
Source-Drain Diode
Diode Forward Voltage
(Note 3)
VGS = 0V, IS = 21A
Reverse Recovery Time
IS = 21A,
trr
--
30
--
ns
Reverse Recovery Charge
di/dt = 100A/μs
Qrr
--
20
--
nC
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 50Ω, IAS = 36A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
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Version: A2003
TQM033NB04CR
Taiwan Semiconductor
ORDERING INFORMATION
ORDERING CODE
TQM033NB04CR RLG
PACKAGE
PACKING
PDFN56U
2,500pcs / 13” Reel
3
Version: A2003
TQM033NB04CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
50
50
ID, Drain Current (A)
40
ID, Drain Current (A)
VGS=10V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
30
20
VGS=4V
10
40
30
25℃
20
-55℃
10
175℃
0
0
0
1
2
3
4
0
On-Resistance vs. Drain Current
0.004
0.003
VGS=7V
0.002
VGS=10V
0.001
4
5
0
0
10
20
30
40
VDS=20V
ID=21A
8
6
4
2
0
0
50
20
40
60
80
100
Qg, Gate Charge (nC)
ID, Drain Current (A)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
2.5
0.02
RDS(on), Drain-Source On-Resistance (Ω)
RDS(on), Drain-Source On-Resistance
(Normalized)
3
Gate-Source Voltage vs. Gate Charge
0.005
2
2
10
0.006
VGS, Gate to Source Voltage (V)
RDS(on), Drain-Source On-Resistance (Ω)
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
VGS=10V
ID=21A
1.5
1
0.5
0
-75 -50 -25
0
25
50
75 100 125 150 175
0.015
0.01
0.005
ID=21A
0
4
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (°C)
4
Version: A2003
TQM033NB04CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
BVDSS (Normalized)
Drain-Source Breakdown Voltage
7000
C, Capacitance (pF)
6000
5000
Ciss
4000
3000
2000
1000
Coss
Crss
0
0
1.2
ID=2mA
1.1
1
0.9
0.8
10
20
30
40
-75 -50 -25
VDS, Drain to Source Voltage (V)
Maximum Safe Operating Area, Junction-to-Case
25
50
75 100 125 150 175
Source-Drain Diode Forward Current vs. Voltage
100
IS, Reverse Drain Current (A)
1000
RDS(on)
ID, Drain Current (A)
0
TJ, Junction Temperature (°C)
100
10
SINGLE PULSE
RӨJC=1.4°C/W
TC=25°C
10
175℃
-55℃
25℃
1
0.1
1
0.1
1
10
0.2
100
VDS, Drain to Source Voltage (V)
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forward Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
10
SINGLE PULSE
RӨJC=1.4°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.01
0.1
t, Square Wave Pulse Duration (sec)
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Version: A2003
TQM033NB04CR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56U
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
TSC
033NB04
YWWLF
Y
WW
L
F
_
= Year Code
= Week Code (01~52)
= Lot Code (1~9,A~Z)
= Factory Code
= AEC-Q101 Qualified
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Version: A2003
TQM033NB04CR
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: A2003
