PMZ250UN,315

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMZ250UN N-channel TrenchMOS extremely low level FET Rev. 01 — 21 February 2008 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features n Profile 55 % lower than SOT23 n Lower on-state resistance n Leadless package n Footprint 90 % smaller than SOT23 n Low threshold voltage n Fast switching 1.3 Applications n Driver circuits n DC-to-DC converters n Load switching in portable appliances 1.4 Quick reference data n VDS ≤ 20 V n RDSon ≤ 300 mΩ n ID ≤ 2.28 A n Ptot ≤ 2.50 W 2. Pinning information Table 1. Pinning Pin Description 1 gate (G) Simplified outline 2 source (S) 1 3 drain (D) 2 Symbol D 3 Transparent top view SOT883 (SC-101) G mbb076 S PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 3. Ordering information Table 2. Ordering information Type number PMZ250UN Package Name Description Version SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 20 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 20 V VGS gate-source voltage - ±8 V ID drain current Tsp = 25 °C; VGS = 4.5 V; see Figure 2 and 3 - 2.28 A Tsp = 100 °C; VGS = 4.5 V; see Figure 2 - 1.44 A A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 4.56 Ptot total power dissipation Tsp = 25 °C; see Figure 1 - 2.50 W Tstg storage temperature - −55 +150 °C Tj junction temperature - −55 +150 °C Source-drain diode IS source current Tsp = 25 °C - 2.28 A ISM peak source current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 4.56 A all pins - human body model; C = 100pF; R = 1.5 kΩ - 60 V machine model; C = 200 pF - 30 V Electrostatic discharge Vesd electrostatic discharge voltage PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 2 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 003aac031 120 003aac033 120 Ider ( %) Pder (%) 80 80 40 40 0 0 0 50 100 150 0 200 50 100 150 200 Tsp (°C) Tsp (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) ID I der = -------------------- × 100 % I D ( 25°C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 003aac202 102 ID (A) Limit RDSon = VDS / ID tp = 10 µs 10 100 µs 1 1 ms 10 ms 100 ms DC 10−1 10−2 10−1 1 102 10 VDS (V) Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 3 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter thermal resistance from junction to solder point Rth(j-sp) thermal resistance from junction to ambient Rth(j-a) [1] Conditions see Figure 4 minimum footprint [1] Min Typ Max Unit - - 50 K/W - 670 - K/W Mounted on a printed-circuit board; vertical in still air. 003aab831 102 Zth(j-sp) (K/W) δ = 0.5 0.2 10 0.1 0.05 δ= P 0.02 single pulse tp T t tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 4 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 20 - - V Tj = −55 °C 18 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 10 µA; VGS = 0 V ID = 0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 0.45 0.7 0.95 V Tj = 150 °C 0.25 - - V Tj = −55 °C - - 1.15 V VDS = 20 V; VGS = 0 V Tj = 25 °C - - 1 µA Tj = 150 °C - - 100 µA - 10 100 nA IGSS gate leakage current VGS = ±8 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8 Tj = 25 °C - 250 300 mΩ Tj = 150 °C - 400 480 mΩ VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8 - 320 400 mΩ VGS = 1.8 V; ID = 0.075 A; see Figure 6 and 8 - 420 600 mΩ ID = 1 A; VDS = 10 V; VGS = 4.5 V; see Figure 11 and 12 - 0.89 - nC - 0.13 - nC - 0.18 - nC - 45 - pF - 11 - pF - 7 - pF - 4.5 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VGS = 0 V; VDS = 20 V; f = 1 MHz; see Figure 14 VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω tr rise time - 10 - ns td(off) turn-off delay time - 18.5 - ns tf fall time - 5 - ns - 0.80 1.2 V Source-drain diode VSD source-drain voltage IS = 0.3 A; VGS = 0 V; see Figure 13 PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 5 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03an02 2.5 4.5 ID (A) 3 2.5 03an03 1 VGS (V) = 1.8 RDSon (Ω) 2 2 0.8 2 1.5 0.6 2.5 1.8 1 0.4 3 4.5 VGS (V) = 1.5 0.5 0.2 0 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 VDS (V) 2.5 ID (A) Tj = 25 °C Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 03an04 2.5 ID (A) 003aac024 2.0 a 2 25 °C Tj = 150 °C 1.5 1.5 1.0 1 0.5 0.5 0 0 1 2 3 4 0 −60 0 Tj = 25 °C and 150 °C; VDS > ID × RDSon 120 180 R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature PMZ250UN_1 Product data sheet 60 Tj (°C) VGS (V) © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 6 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03aj65 1.2 VGS(th) (V) 03am43 10−3 ID (A) 0.9 max 10−4 min typ max typ 0.6 10−5 min 0.3 10−6 0 −60 0 60 120 180 0 0.4 0.8 Tj (°C) 1.2 VGS (V) Tj = 25 °C; VDS = 5 V ID = 0.25 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 03an07 5 ID = 1 A Tj = 25 °C VDS = 10 V VGS (V) 4 VDS ID 3 VGS(pl) 2 VGS(th) VGS 1 QGS1 QGS2 QGS 0 0 0.2 0.4 0.6 0.8 1 QG (nC) QGD QG(tot) 003aaa508 ID = 1 A; VDS = 10 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform definitions PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 7 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03an97 1 03an06 102 VGS = 0 V IS (A) 0.8 Ciss C (pF) 0.6 Coss 10 Crss 0.4 0.2 150 °C Tj = 25 °C 0 0 0.2 0.4 0.6 0.8 1 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V 1 10−1 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMZ250UN_1 Product data sheet 1 © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 8 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 7. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION REFERENCES IEC JEDEC SOT883 JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Fig 15. Package outline SOT833 (SC-101) PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 9 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 8. Soldering 1.30 R = 0.05 (12×) 0.30 R = 0.05 (12×) solder lands 0.35 (2×) solder resist 0.90 0.20 0.60 0.70 0.80 occupied area 0.25 (2×) solder paste 0.30 (2×) 0.30 0.40 (2×) 0.40 0.50 (2×) 0.50 mbl873 Dimensions in mm Fig 16. Reflow soldering footprint for SOT883 PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 10 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes PMZ250UN_1 20080221 Product data sheet - - PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 11 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 11. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com PMZ250UN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 21 February 2008 12 of 13 PMZ250UN NXP Semiconductors N-channel TrenchMOS extremely low level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 February 2008 Document identifier: PMZ250UN_1