C3M0030090K

C3M0030090K VDS 900 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology 73 A RDS(on) 30 mΩ N-Channel Enhancement Mode Features • • • • • • • Package C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • • • • • Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Gate (Pin 4) Driver Source (Pin 3) Applications • • • • Solar inverters EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Power Source (Pin 2) Part Number Package Marking C3M0030090K TO 247-4 C3M0030090K Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 900 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25˚C Fig. 19 ID ID(pulse) PD TJ , Tstg Continuous Drain Current 73 48 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 200 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 240 W TC=25˚C, TJ = 150 ˚C Fig. 20 -40 to +150 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque, (M3 or 6-32 screw) 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0030090K Rev. 4, 01-2021 1.6mm (0.063”) from case for 10s Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 900 1.7 2.4 3.5 2.1 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 11 mA V VDS = VGS, ID = 11 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 30 39 RDS(on) Drain-Source On-State Resistance 41 23 gfs Transconductance Ciss Input Capacitance 1503 Coss Output Capacitance 144 Crss Reverse Transfer Capacitance 5 Eoss Coss Stored Energy 30 EON Turn-On Switching Energy (SiC Diode FWD) 133 EOFF Turn Off Switching Energy (SiC Diode FWD) 111 EON Turn-On Switching Energy (Body Diode FWD) 246 EOFF Turn Off Switching Energy (Body Diode FWD) 99 td(on) Turn-On Delay Time 9 Rise Time 15 Turn-Off Delay Time 24 Fall Time 9 Internal Gate Resistance 3 tr td(off) tf RG(int) S 22 Qgs Gate to Source Charge 20 Qgd Gate to Drain Charge 26 Qg Total Gate Charge 74 mΩ pF μJ VGS = 15 V, ID = 35 A VGS = 15 V, ID = 35 A, TJ = 150ºC VDS= 20 V, IDS= 35 A VDS= 20 V, IDS= 35 A, TJ = 150ºC VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Note Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 Fig. 16 μJ VDS = 600 V, VGS = -4 V/15 V, ID = 35 A, RG(ext) = 2.5Ω, L= 59 μH, TJ = 150ºC Fig. 26, 29b μJ VDS = 600 V, VGS = -4 V/15 V, ID = 35 A, RG(ext) = 2.5Ω, L= 59 μH, TJ = 150ºC Fig. 26, 29a ns VDD = 600 V, VGS = -4 V/15 V ID = 35 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27 Ω f = 1 MHz, VAC = 25 mV nC VDS = 600 V, VGS = -4 V/15 V ID = 35 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.5 V VGS = -4 V, ISD = 17.5 A 4.0 V VGS = -4 V, ISD = 17.5 A, TJ = 150 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 48 A VGS = -4 V, TC = 25 °C Note 1 Diode pulse Current 200 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 35 A, VR = 600 V dif/dt = 3075 A/µs, TJ = 150 °C Note 1 trr Reverse Recover time 24 ns Qrr Reverse Recovery Charge 536 nC Irrm Peak Reverse Recovery Current 35 A Thermal Characteristics Symbol 2 Parameter RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance From Junction to Ambient C3M0030090K Rev. 4, 01-2021 Typ. 0.48 Max. 0.52 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 180 160 Drain-Source Current, IDS (A) 200 Conditions: Tj = -40 °C tp = < 200 µs VGS = 13V VGS = 15V 160 140 VGS = 11V 120 100 80 60 VGS = 9V 40 20 0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 VGS = 15V VGS = 11V 140 120 100 80 VGS = 9V 60 40 VGS = 7V 0 20.0 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) Drain-Source Current, IDS (A) 160 2.0 VGS = 13V 1.6 140 120 VGS = 9V 100 80 60 VGS = 7V 40 20 0 20.0 125 150 1.0 0.8 0.6 0.4 0.2 0.0 60 2.5 5.0 7.5 10.0 15.0 12.5 17.5 0.0 20.0 -50 -25 0 80 On Resistance, RDS On (mOhms) Tj = 150 °C 40 Tj = -40 °C Tj = 25 °C 20 10 0 20 40 60 80 100 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures C3M0030090K Rev. 4, 01-2021 120 50 75 100 Conditions: IDS = 35 A tp < 200 µs 70 30 25 Junction Temperature, Tj (°C) Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 µs 50 On Resistance, RDS On (mOhms) 17.5 1.2 Figure 3. Output Characteristics TJ = 150 ºC 3 15.0 1.4 Drain-Source Voltage, VDS (V) 0 12.5 Conditions: IDS = 35 A VGS = 15 V tp < 200 µs 1.8 VGS = 11V On Resistance, RDS On (P.U.) 180 10.0 Figure 2. Output Characteristics TJ = 25 ºC VGS = 15V Conditions: Tj = 150 °C tp = < 200 µs 7.5 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -40 ºC 200 VGS = 13V 20 VGS = 7V 0.0 Conditions: Tj = 25 °C tp = < 200 µs 180 Drain-Source Current, IDS (A) 200 140 60 VGS = 11 V 50 40 VGS = 13 V 30 VGS = 15 V 20 10 0 -50 -25 0 25 50 75 Junction Temperature, Tj (°C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 110 90 -8 -6 -4 -2 0 80 TJ = 150 °C 70 TJ = -40 °C TJ = 25 °C 60 50 40 30 -40 VGS = -4 V VGS = 0 V -60 -80 VGS = -2 V -100 -120 -140 20 10 0 0 4 2 6 8 10 12 14 -6 -4 -2 0 0 -10 -8 -6 -4 -2 0 -60 VGS = 0 V -80 VGS = -2 V -100 -120 -140 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -80 VGS = -2 V -120 -140 Conditions: Tj = 150°C tp < 200 µs -200 Drain-Source Voltage VDS (V) 16 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 1.5 1.0 0.5 50 75 Junction Temperature TJ (°C) 100 125 Figure 11. Threshold Voltage vs. Temperature 4 C3M0030090K Rev. 4, 01-2021 -180 -200 Conditions: IDS = 35 A IGS = 50 mA VDS = 600 V TJ = 25 °C 12 2.0 25 -160 Figure 10. Body Diode Characteristic at 150 ºC 2.5 0 -100 -180 3.0 -25 -60 VGS = 0 V -160 Conditons VGS = VDS IDS = 11 mA 3.5 -40 VGS = -4 V Figure 9. Body Diode Characteristic at 25 ºC 4.0 0 -20 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -40 VGS = -4 V -50 -200 Figure 8. Body Diode Characteristic at -40 ºC -20 0.0 -180 Drain-Source Voltage VDS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -160 Conditions: Tj = -40°C tp < 200 µs Gate-Source Voltage, VGS (V) -10 0 -20 Drain-Source Current, IDS (A) 100 Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 µs 150 8 4 0 -4 0 10 20 30 40 50 60 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 70 80 Typical Performance -10 -8 -6 -4 -2 0 0 -10 -8 -6 -4 -2 0 -40 VGS = 5 V -60 -80 VGS = 10 V -100 VGS = 15 V -120 -140 -20 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -20 VGS = 0 V VGS = 10 V VGS = 15 V -6 -5 -4 -3 -2 Drain-Source Voltage VDS (V) -60 VGS = 10 V -80 VGS = 15 V -100 -120 -140 50 40 30 20 -180 0 -200 0 100 200 300 400 500 600 700 Drain to Source Voltage, VDS (V) 800 900 1000 Figure 16. Output Capacitor Stored Energy Figure 15. 3rd Quadrant Characteristic at 150 ºC 10000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 1000 1000 Coss Capacitance (pF) Capacitance (pF) -200 10 -160 Conditions: Tj = 150 °C tp < 200 µs 100 10 0 50 100 Drain-Source Voltage, VDS (V) C3M0030090K Rev. 4, 01-2021 Coss 100 10 Crss 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 -180 60 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -40 VGS = 5 V 1 -160 70 0 -20 Ciss -120 Conditions: Tj = 25 °C tp < 200 µs -200 0 VGS = 0 V 10000 -100 Figure 14. 3rd Quadrant Characteristic at 25 ºC -1 Drain-Source Voltage VDS (V) -80 -140 Figure 13. 3rd Quadrant Characteristic at -40 ºC -7 -60 VGS = 5 V -180 Drain-Source Voltage VDS (V) -8 -40 VGS = 0 V -160 Conditions: Tj = -40 °C tp < 200 µs 0 200 1 Crss 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 900 Typical Performance 250 Conditions: TJ ≤ 150 °C 70 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 80 60 50 40 30 20 10 0 -50 -25 0 25 50 75 Case Temperature, TC (°C) 100 125 200 150 100 50 0 150 Conditions: TJ ≤ 150 °C Figure 19. Continuous Drain Current Derating vs. Case Temperature -50 0 -25 25 50 100 75 Case Temperature, TC (°C) 150 125 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 100.00 0.5 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 1 0.3 100E-3 0.1 0.05 0.02 0.01 10E-3 SinglePulse 1E-3 1 µs 10.00 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 10 µs 100 µs 1.00 1 ms 100 ms 0.10 0.01 1E-6 Limited by RDS On 1 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 Figure 21. Transient Thermal Impedance (Junction - Case) 350 300 Switching Loss (uJ) 700 Conditions: TJ = 25 °C VDD = 450 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0030090K L = 59 μH 250 600 500 200 EOn EOff 100 0 10 20 30 40 50 Drain to Source Current, IDS (A) 60 70 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 450V) 6 ETotal 400 EOn 300 EOff 200 100 50 0 1000 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0030090K L = 59 μH ETotal 150 100 Figure 22. Safe Operating Area Switching Loss (uJ) 400 10 Drain-Source Voltage, VDS (V) C3M0030090K Rev. 4, 01-2021 80 0 0 10 20 30 40 50 Drain to Source Current, IDS (A) 60 70 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 80 Typical Performance Conditions: TJ = 25 °C VDD = 600 V IDS = 35 A VGS = -4/+15 V FWD = C3M0030090K L = 59 μH Switching Loss (uJ) 800 500 ETotal Conditions: IDS = 35 A VDD = 600 V RG(ext) = 2.5 Ω VGS = -4/+15 V L = 59 μH FWD = C3M0030090K FWD = C4D20120D 450 400 350 600 Switching Loss (uJ) 1000 EOn 400 EOff 200 300 ETotal EOn 250 ETotal with Schottky 200 EOn with Schottky 150 100 EOff with Schottky 50 0 5 0 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 Conditions: TJ = 25 °C VDD = 600 V IDS = 35 A VGS = -4/+15 V FWD = C3M0030090K 90 Switching Times (ns) 80 70 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 td(off) 60 50 tr 40 30 td(on) 20 tf 10 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0030090K Rev. 4, 01-2021 20 175 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 100 0 EOff 25 Figure 28. Switching Times Definition 200 Test Circuit Schematic RG L Q1 VGS= - 4 V VDC KS CDC Q2 RG D.U.T KS Figure 29a. Clamped Inductive Switching Test Circuit Using MOSFET Intrinsic Body Diode D1 SiC Schottky VDC Q2 RG D.U.T Figure 29b. Clamped Inductive Switching Test Circuit Using SiC Schottky Diode 8 C3M0030090K Rev. 4, 01-2021 Package Dimensions Package TO-247-4L 9 C3M0030090K Rev. 4, 01-2021 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS 10 C3M0030090K Rev. 4, 01-2021 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 11 C3M0030090K Rev. 4, 01-2021 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power