TSM7N90CI C0G

TSM7N90 Taiwan Semiconductor N-Channel Power MOSFET 900V, 7A, 1.9Ω FEATURES KEY PERFORMANCE PARAMETERS Low RDS(on) 1.9Ω (Max.) Low gate charge typical @49nC (Typ.) Improve dV/dt capability Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition APPLICATION ● Power Supply ● Lighting VALUE UNIT VDS 900 V RDS(on) (max) 1.9 Ω Qg 49 nC ITO-220 eco mm TO-220 PARAMETER en de d ● ● ● ● ● ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER tR Drain-Source Voltage SYMBOL Gate-Source Voltage TC = 25°C No Continuous Drain Current (Note 1) Pulsed Drain Current TO-220 TC = 100°C 900 V VGS ±30 V 7 A 4.31 A 28 A IDM Total Power Dissipation @ TC = 25°C UNIT VDS ID (Note 2) ITO-220 PDTOT 250 40.3 W (Note 3) EAS 106 mJ Single Pulsed Avalanche Current (Note 3) IAS 7 A TJ, TSTG - 55 to +150 °C Single Pulsed Avalanche Energy Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER SYMBOL TO-220 ITO-220 UNIT Junction to Case Thermal Resistance RӨJC 0.5 3.1 °C/W Junction to Ambient Thermal Resistance RӨJA 62.5 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. Document Number: DS_P0000144 1 Version: B15 TSM7N90 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 4) VGS = 0V, ID = 250µA BVDSS 900 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 -- 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 900V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID = 3.5A RDS(on) -- 1.52 1.9 Ω VDS = 720V, ID = 7A, VGS = 10V Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Switching VDS = 25V, VGS = 0V, f = 1.0MHz (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 25Ω, ID = 10A, VGS = 10V, Turn-On Rise Time Turn-Off Fall Time e co Turn-Off Delay Time Source-Drain Diode 49 -- Qgs -- 7 -- Qgd -- 20 -- Ciss -- 1969 -- Coss -- 133 -- Crss nC pF 11 td(on) -- 39 -- tr -- 38 -- td(off) -- 155 -- tf -- 45 -- VSD -- -- 1.4 V trr -- 464 -- ns Qrr -- 4.7 -- μC ns (Note 4) Forward On Voltage IS = 10A, VGS = 0V IS = 7A, dIF/dt = 100A/μs tR Reverse Recovery Time Reverse Recovery Charge Notes: -- mm Reverse Transfer Capacitance Qg de Total Gate Charge en Dynamic (Note 5) d Drain-Source Breakdown Voltage Current limited by package. 2. Pulse width limited by the maximum junction temperature. No 1. 3. L = 4.1mH, IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 100% Eas Test Condition: L = 1mH, IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS_P0000144 2 Version: B15 TSM7N90 Taiwan Semiconductor ORDERING INFORMATION PACKAGE PACKING TSM7N90CZ C0G TO-220 50pcs/Tube TSM7N90CI C0G ITO-220 50pcs/Tube No tR e co mm en de d PART NO. Document Number: DS_P0000144 3 Version: B15 TSM7N90 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) de en ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) On-Resistance vs. Drain Current e co VGS, Gate to Source Voltage (V) mm Gate Charge tR RDS(on), Drain-Source On-Resistance d Transfer Characteristics Output Characteristics Qg, Gate Charge (nC) ID, Continuous Drain Current (A) Source-Drain Diode Forward Current vs. Voltage IS, Body Diode Forward Current (A) RDS(on), Drain-Source On-Resistance (Normalized) No On-Resistance vs. Junction Temperature VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) Document Number: DS_P0000144 4 Version: B15 TSM7N90 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) en de BVDSS (Normalized) Drain-Source Breakdown Voltage (V) ID, Drain Current (A) TC, Case Temperature (°C) TJ, Junction Temperature (°C) Capacitance vs. Drain-Source Voltage tR e co C, Capacitance (pF) mm Maximum Safe Operating Area (TO-220) ID, Continuous Drain Current (A) d BVDSS vs. Junction Temperature Drain Current vs. Case Temperature VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) ID, Continuous Drain Current (A) No Maximum Safe Operating Area (ITO-220) VDS, Drain to Source Voltage (V) Document Number: DS_P0000144 5 Version: B15 TSM7N90 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) en de d Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (TO-220) Square Wave Pulse Duration (s) mm e co tR Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220) No Square Wave Pulse Duration (s) Document Number: DS_P0000144 6 Version: B15 TSM7N90 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) e co MARKING DIAGRAM mm en de d TO-220 No tR Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000144 7 Version: B15 TSM7N90 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) = Halogen Free = Year Code = Week Code (01~52) = Factory Code No tR e co G Y WW F mm MARKING DIAGRAM en de d ITO-220 Document Number: DS_P0000144 8 Version: B15 TSM7N90 No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000144 9 Version: B15