C3M0032120K

C3M0032120K VDS 1200 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 63 A 32 mΩ N-Channel Enhancement Mode Features • • • • • • • Package 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant TAB Drain Benefits • • • • • Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency 1 D 2 3 4 S S G Gate (Pin 4) Driver Source (Pin 3) Applications • • • • • Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch Power Source (Pin 2) Part Number Package Marking C3M0032120K TO 247-4 C3M0032120K Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 1200 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2 ID Continuous Drain Current ID(pulse) PD TJ , Tstg TL 63 48 A VGS = 15 V, TC = 25˚C VGS = 15 V, TC = 100˚C Pulsed Drain Current 120 A Pulse width tP limited by Tjmax Power Dissipation 283 W TC=25˚C, TJ = 175 ˚C -40 to +175 ˚C 260 ˚C Operating Junction and Storage Temperature Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0032120K Rev. -, 06-2019 1.6mm (0.063”) from case for 10s Fig. 19 Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Drain-Source On-State Resistance Min. Typ. 1.8 2.5 23 V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 11.5 mA V VDS = VGS, ID = 11.5 mA, TJ = 175ºC μA VDS = 1200 V, VGS = 0 V 10 250 nA VGS = 15 V, VDS = 0 V 32 43 57.6 27 3357 Coss Output Capacitance 129 Crss Reverse Transfer Capacitance 8 Eoss Coss Stored Energy 76 EON Turn-On Switching Energy (SiC Diode FWD) 367 EOFF Turn Off Switching Energy (SiC Diode FWD) 123 22 EON Turn-On Switching Energy (Body Diode FWD) 955 EOFF Turn Off Switching Energy (Body Diode FWD) 107 td(on) Turn-On Delay Time 25 Rise Time 18 Turn-Off Delay Time 32 Fall Time 9 Internal Gate Resistance 1.7 Qgs Gate to Source Charge 40 Qgd Gate to Drain Charge 34 Qg Total Gate Charge 118 C3M0032120K Rev. -, 06-2019 Test Conditions 50 Input Capacitance RG(int) Unit 1 Ciss tf 3.6 2.0 Transconductance td(off) Max. 1200 gfs tr 2 Parameter mΩ S pF VGS = 15 V, ID = 40 A VGS = 15 V, ID = 40 A, TJ = 175ºC VDS= 20 V, IDS= 40 A VDS= 20 V, IDS= 40 A, TJ = 175ºC VGS = 0 V, VDS = 1000 V f = 100 kHz Note Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VAC = 25 mV μJ Fig. 16 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, Fig. 26 RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, Fig. 26 RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC ns VDD = 800 V, VGS = -4 V/15 V RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 Timing relative to VDS, Inductive load Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -4 V/15 V ID = 40 A Per IEC60747-8-4 pg 21 Fig. 27 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.6 V VGS = -4 V, ISD = 20 A, TJ = 25 °C 4.2 V VGS = -4 V, ISD = 20 A, TJ = 175 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 62 A VGS = -4 V, TC = 25˚C Note 1 Diode pulse Current 120 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 40 A, VR = 800 V dif/dt = 2250 A/µs, TJ = 175 °C Note 1 trr Reverse Recover time 27 ns Qrr Reverse Recovery Charge 478 nC Irrm Peak Reverse Recovery Current 27 A Thermal Characteristics Symbol 3 Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.45 RθJA Thermal Resistance From Junction to Ambient C3M0032120K Rev. -, 06-2019 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 120 80 60 40 VGS = 9V 20 VGS = 15V Conditions: TJ = 25 °C tp = < 200 µs 100 VGS = 11V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 100 120 VGS = 13V VGS = 15V Conditions: TJ = -40 °C tp = < 200 µs VGS = 13V VGS = 11V 80 60 VGS = 9V 40 20 VGS = 7V VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 10.0 0 12.0 0.0 2.0 4.0 Figure 1. Output Characteristics TJ = -40 ºC Conditions: TJ = 175 °C tp = < 200 µs Drain-Source Current, IDS (A) 100 2.0 VGS = 15V 10.0 12.0 Conditions: IDS = 40 A VGS = 15 V tp < 200 µs 1.8 VGS = 11V VGS = 13V 8.0 Figure 2. Output Characteristics TJ = 25 ºC 1.6 On Resistance, RDS On (P.U.) 120 6.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) VGS = 9V 80 60 40 VGS = 7V 20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -40 -20 0 Drain-Source Voltage, VDS (V) 60 TJ = 175 °C 50 40 TJ = -40 °C TJ = 25 °C 30 20 10 0 20 40 60 80 100 Drain-Source Current, IDS (A) 120 Figure 5. On-Resistance vs. Drain Current For Various Temperatures 4 C3M0032120K Rev. -, 06-2019 80 100 120 140 160 180 70 60 140 160 VGS = 11 V 50 40 VGS = 13 V 30 VGS = 15 V 20 10 0 0 60 Conditions: IDS = 40 A tp < 200 µs 80 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 90 Conditions: VGS = 15 V tp < 200 µs 70 40 Junction Temperature, TJ (°C) Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 175 ºC 80 20 -40 -5 30 65 100 Junction Temperature, TJ (°C) 135 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 170 Typical Performance 160 140 -8 -7 -6 -5 -4 -3 -2 -1 0 TJ = 175 °C 120 TJ = 25 °C 100 TJ = -40 °C 80 60 40 -20 VGS = 0 V -40 VGS = -2 V -60 -80 20 0 0 2 4 6 8 10 12 14 -6 -5 -4 -3 Figure 8. Body Diode Characteristic at -40 ºC -2 -1 0 Drain-Source Current, IDS (A) VGS = -4 V 0 -20 VGS = 0 V -40 VGS = -2 V -60 -80 -10 -9 2.0 1.5 1.0 0.5 65 100 Junction Temperature TJ (°C) 135 Figure 11. Threshold Voltage vs. Temperature 5 C3M0032120K Rev. -, 06-2019 -2 -1 0 0 -20 -40 VGS = -2 V -60 -80 Drain-Source Voltage VDS (V) 16 -100 -120 170 Conditions: IDS = 40 A IGS = 50 mA VDS = 800 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.5 30 -3 Figure 10. Body Diode Characteristic at 175 ºC 3.0 -5 -4 Conditions: TJ = 175°C tp < 200 µs Conditons VGS = VDS IDS = 11.5 mA -40 -5 VGS = 0 V Figure 9. Body Diode Characteristic at 25 ºC 0.0 -6 VGS = -4 V -120 Drain-Source Voltage VDS (V) 3.5 -7 -100 Conditions: TJ = 25°C tp < 200 µs 4.0 -8 Drain-Source Current, IDS (A) -7 -120 Drain-Source Voltage VDS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -100 Conditions: TJ = -40°C tp < 200 µs Gate-Source Voltage, VGS (V) -9 0 VGS = -4 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -9 Conditions: VDS = 20 V tp < 200 µs 8 4 0 -4 0 20 40 60 80 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 100 120 Typical Performance -8 -7 -6 -5 -4 -3 -2 -1 0 0 -20 VGS = 0 V VGS = 5 V -40 VGS = 10 V -60 VGS = 15 V -80 -10 -9 -7 -6 -5 -4 -3 -2 -1 -5 -4 -3 -2 -1 0 0 -20 VGS = 5 V -40 VGS = 10 V -60 VGS = 15 V -80 Conditions: TJ = 25 °C tp < 200 µs Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -40 ºC -8 -6 VGS = 0 V -120 Drain-Source Voltage VDS (V) -9 -7 -100 Conditions: TJ = -40 °C tp < 200 µs -10 -8 Drain-Source Current, IDS (A) -9 Drain-Source Current, IDS (A) -10 -100 -120 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 120 0 100 VGS = 0 V VGS = 5 V -40 VGS = 10 V -60 VGS = 15 V -80 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -20 80 60 40 20 Conditions: TJ = 175 °C tp < 200 µs Drain-Source Voltage VDS (V) -100 0 -120 0 200 Figure 15. 3rd Quadrant Characteristic at 175 ºC 10000 Capacitance (pF) Capacitance (pF) Coss 100 Crss 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) C3M0032120K Rev. -, 06-2019 1200 Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz Coss 100 Crss 10 0 1000 Ciss 1000 10 6 800 10000 1000 1 600 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz Ciss 400 Drain to Source Voltage, VDS (V) 200 1 0 200 400 600 800 Drain-Source Voltage, VDS (V) 1000 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1200V) 1200 Typical Performance 350 Conditions: TJ ≤ 175 °C 70 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 80 60 50 40 30 20 10 0 -55 -30 -5 20 45 70 95 120 Case Temperature, TC (°C) 145 250 200 150 100 50 0 170 Figure 19. Continuous Drain Current Derating vs. Case Temperature -55 -30 -5 45 70 95 Case Temperature, TC (°C) 120 Limited by RDS On 0.5 0.3 100E-3 0.1 0.05 0.02 10E-3 0.01 1 ms 100 ms 1.00 0.10 0.01 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 Conditions: TC = 25 °C D = 0, 0.1 1 1200 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15V FWD = C3M0032120K L = 65.7 μH 700 600 500 1000 400 300 200 EOff 20 30 40 50 Drain to Source Current, IDS (A) 60 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) C3M0032120K Rev. -, 06-2019 1000 800 ETotal EOn 600 400 EOff 200 100 10 100 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -4V/+15V FWD = C3M0032120K L = 65.7 μH ETotal EOn 0 10 Drain-Source Voltage, VDS (V) Figure 22. Safe Operating Area Switching Loss (µJ) 800 10 µs 10.00 Figure 21. Transient Thermal Impedance (Junction - Case) Switching Loss (µJ) 170 100 µs SinglePulse 0 145 100.00 1 1E-3 7 20 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Conditions: TJ ≤ 175 °C 300 70 0 0 10 20 30 40 50 Drain to Source Current, IDS (A) 60 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 70 Typical Performance 2000 Switching Loss (µJ) 1200 Conditions: TJ = 25 °C VDD = 800 V IDS = 40 A VGS = -4V/+15 V FWD = C3M0032120K L = 65.7 μH 1500 ETotal EOn 1000 EOff 500 800 ETotal EOn - - - - FWD = C4D20120A 600 ETotal (FWD Diode) EOn (FWD Diode) EOff (FWD Diode) 400 200 EOff 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 120 Conditions: TJ = 25 °C VDD = 800 V IDS = 40 A VGS = -4V/+15 V FWD = C3M0032120K 100 80 0 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 td(off) td(on) 60 tr 40 tf 20 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 8 C3M0032120K Rev. -, 06-2019 20 175 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Switching Times (ns) Conditions: IDS = 40 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -4V/+15 V L = 65.7 μH FWD = C3M0032120K 1000 Switching Loss (µJ) 2500 25 Figure 28. Switching Times Definition 200 Test Circuit Schematic RG L VDC Q1 VGS= - 4 V KS CDC Q2 RG D.U.T KS Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 9 C3M0032120K Rev. -, 06-2019 Package Dimensions Package TO-247-4L E E1 E4 E2 E3 BASE METAL SECTION "F-F", "G-G" AND "H-H" SCALE: NONE 10 C3M0032120K Rev. -, 06-2019 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. SYM A A1 A2 b' b b1 b2 b3 b4 b5 b6 c' c D D1 D2 E MILLIMETERS MIN 4.83 2.29 1.91 1.07 1.07 2.39 2.39 1.07 1.07 2.39 2.39 0.55 0.55 23.30 16.25 0.95 15.75 MAX 5.21 2.54 2.16 1.28 1.33 2.94 2.84 1.60 1.50 2.69 2.64 0.65 0.68 23.60 17.65 1.25 16.13 SYM E1 E2 E3 E4 e e1 N L L1 L2 øP Q S T W X MILLIMETERS MIN MAX 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43 2.54 BSC 5.08 BSC 4 17.31 17.82 3.97 4.37 2.35 2.65 3.51 3.65 5.49 6.00 6.04 6.30 17.5° REF. 3.5 ° REF. 4 ° REF. Recommended Solder Pad Layout 11 C3M0032120K Rev. -, 06-2019 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 12 C3M0032120K Rev. - , 06-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power