GAN041-650WSBQ

GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12 January 2021 Product data sheet 1. General description The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefits • • • • • • Ultra-low reverse recovery charge Simple gate drive (0 V to +10 V or 12 V) Robust gate oxide (±20 V capability) High gate threshold voltage (+4 V) for very good gate bounce immunity Very low source-drain voltage in reverse conduction mode Transient over-voltage capability 3. Applications • • • • Hard and soft switching converters for industrial and datacom power Bridgeless totempole PFC PV and UPS inverters Servo motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - - 650 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 47.2 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 187 W Tj junction temperature -55 - 175 °C VGS = 10 V; ID = 32 A; Tj = 25 °C; Fig. 11 - 35 41 mΩ ID = 32 A; VDS = 400 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 - 6.6 - nC - 22 - nC IS = 32 A; dIS/dt = -1000 A/µs; VGS = 0 V; VDS = 400 V; Fig. 20 - 150 - nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Source-drain diode Qr recovered charge GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 3 D drain mb S mounting base; connected to source Graphic symbol mb D G 1 2 S 3 TO-247 (SOT429) aaa-028116 6. Ordering information Table 3. Ordering information Type number Package GAN041-650WSB Name Description Version TO-247 plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body SOT429 7. Marking Table 4. Marking codes Type number Marking code GAN041-650WSB GAN041 650WSB 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - 650 V VTDS transient drain to source voltage pulsed; tp = 1 µs; δfactor = 0.01 - 725 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 187 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 47.2 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 33.4 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 IDM peak drain current - 240 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C GAN041-650WSB Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 2 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Symbol Parameter Conditions Min Max Unit Source-drain diode IS source current Tmb = 25 °C; VGS = 0 V - 47.2 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 240 A 03aa16 120 aaa-027798 150 ID (A) 125 Pder (%) 80 D = 10% D = 20% 100 75 40 D = 50% 50 DC 25 0 0 50 100 150 Tmb (°C) 0 200 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V; Pulse witdh ≤ 10 µs Fig. 2. Fig. 1. ID (A) Normalized total power dissipation as a function of mounting base temperature Continuous drain current as a function of mounting base temperature aaa-032120 103 tp = 1 µs 102 10 µs 10 100 µs 1 ms 1 10 ms 10-1 10-2 10-1 1 10 102 VDS (V) 103 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Min Typ Max Unit Rth(j-mb) thermal resistance from Fig. 4 junction to mounting base - - 0.8 K/W Rth(j-sp) thermal resistance from junction to solder point - - 40 K/W GAN041-650WSB Product data sheet Conditions All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 3 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package aaa-032122 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 P δ= 10-2 single shot Fig. 4. 10-5 10-4 10-3 10-2 T t tp 10-3 10-6 tp T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 1 mA; VDS=VGS; Tj = 25 °C 3.4 3.9 4.5 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 10 2.2 - - V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 5.2 V VDS = 650 V; VGS = 0 V; Tj = 25 °C - 2.5 25 µA VDS = 650 V; VGS = 0 V; Tj = 175 °C - 20 - µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 400 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 400 nA VGS = 10 V; ID = 32 A; Tj = 25 °C; Fig. 11 - 35 41 mΩ VGS = 10 V; ID = 32 A; Tj = 175 °C; Fig. 12 - 84 98 mΩ f = 1 MHz 0.8 1.9 4.8 Ω ID = 32 A; VDS = 400 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 - 22 - nC - 8.4 - nC - 6.6 - nC - 1500 - pF - 147 - pF - 5 - pF Static characteristics VGS(th) IDSS IGSS RDSon RG gate-source threshold voltage drain leakage current gate leakage current drain-source on-state resistance gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance Co(er) effective output capacitance, energy related 0 V ≤ VDS ≤ 400 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 16 - 220 - pF Co(tr) effective output capacitance, time related 0 V ≤ VDS ≤ 400 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C - 380 - pF GAN041-650WSB Product data sheet VDS = 400 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15 All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 4 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time - 14 - ns tr rise time VDS = 400 V; RL = 12.5 Ω; VGS = 12 V; RG(ext) = 12 Ω; IS = 32 A; Fig. 17; Fig. 18 - 14 - ns td(off) turn-off delay time - 36 - ns tf fall time - 17 - ns Qoss output charge VGS = 0 V; VDS = 400 V - 150 - nC IS = 32 A; VGS = 0 V; Tj = 25 °C; Fig. 19 - 1.8 - V IS = 16 A; VGS = 0 V; Tj = 25 °C; Fig. 19 - 1.3 - V IS = 32 A; dIS/dt = -1000 A/µs; VGS = 0 V; VDS = 400 V; Fig. 20 - 59 - ns - 150 - nC Source-drain diode VSD source-drain voltage trr reverse recovery time Qr recovered charge aaa-032128 240 VGS = 12 V ID (A) 200 aaa-032129 160 ID (A) 8V VGS = 12 V 120 160 8V 120 80 6V 6V 80 40 40 5V 5V 0 Fig. 5. 0 5 10 15 VDS (V) 0 20 2 4 6 8 VDS (V) 10 Tj = 25 °C Tj = 175 °C Output characteristics; drain current as a Fig. 6. function of drain-source voltage; typical values Output characteristics; drain current as a function of drain-source voltage; typical values aaa-032123 150 ID (A) 160 90 120 60 80 30 0 175°C 0 2 4 40 Tj = 25°C 6 8 VGS (V) 0 10 VDS = 10 V Product data sheet 0 2 4 6 8 10 VGS (V) 12 Tj = 25 °C; ID = 32 A Transfer characteristics; drain current as a function of gate-source voltage; typical values GAN041-650WSB aaa-032303 200 RDSon (mΩ) 120 Fig. 7. 0 Fig. 8. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 5 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package aaa-032132 200 QOSS (nC) VGS(th) (V) aaa-029174 6 5 Max 150 4 100 Typ 3 Min 2 50 1 0 Fig. 9. 0 100 200 300 400 500 600 VDS (V) 0 -60 700 30 60 90 120 150 Tj (°C) 180 Fig. 10. Gate-source threshold voltage as a function of junction temperature aaa-032124 6V 0 ID = 1 mA ; VDS = VGS Typical QOSS 100 RDSon (mΩ) -30 aaa-032130 3 a 6.5 V 2.5 80 2 7V 60 1.5 40 1 VGS = 12 V 20 0 0.5 0 50 100 150 200 ID (A) 0 250 0 25 50 75 100 125 150 175 Tj (°C) 200 Tj = 25 °C Fig. 11. Drain-source on-state resistance as a function of drain current; typical values GAN041-650WSB Product data sheet Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 6 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package VGS (V) aaa-032125 10 VDS 8 ID 6 VGS(pl) 4 VGS(th) VGS 2 0 QGS2 QGS1 0 5 10 15 20 25 QG (nC) QGS 30 Tj = 25 °C; ID = 32 A 003aaa508 Fig. 14. Gate charge waveform definitions Fig. 13. Gate-source voltage as a function of gate charge; typical values aaa-032126 104 C (pF) QGD QG(tot) aaa-032131 50 EOSS (µJ) Ciss 40 103 Coss 30 102 20 10 1 Crss 1 102 10 10 0 103 VDS (V) VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values +V 0 VDS 300 400 500 600 VDS (V) 700 90 % GND RL Drain VGS RG(ext) 200 Fig. 16. Typical COSS Stored Energy C Driver 100 Gate 10 % tr td(on) DUT tf td(off) ton toff aaa-032510 Source GND Fig. 18. Switching time waveform aaa-032509 Fig. 17. Switching time test circuit GAN041-650WSB Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 7 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package aaa-032127 240 IS (A) 200 Tj = 25°C 50°C 75°C 100°C 160 125°C 150°C 120 175°C 80 40 0 0 2 4 6 8 VSD (V) 10 VGS = 0 V Fig. 19. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values I, V dlS/dt IS trr IRM DUT A Qr 0.25 IRM t VRRM VSD + aaa-029277 Fig. 20. Diode reverse recovery test circuit and waveform 11. Application information A Ferrite bead must be fitted in series with the gate of the GaN FET and should be located as close as possible to the gate pin, (see figure below). Keeping the gate-source loop as compact as possible minimizes the gate loop inductance. The Ferrite bead damps the resonant circuit made up of the gate source loop inductance and the GaN FET input capacitance, thus providing fast switching stability. It is recommended that the impedance of the ferrite bead should be 200 Ω — 270 Ω @ 100 MHz, (recommended p/n BLM18AG221SN1D). GAN041-650WSB Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 8 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package VBUS DC bus driver RG FB1 RCDCL (place as close as possible to drain pin) Q2 VS driver RG FB1 Vo Q1 RSN RCSN CSN aaa-030816 Fig. 21. Ferrite bead and RC snubber A DC-link snubber is recommended in all cases. Optimal is 20 nF in series with 4 Ω, most easily achieved with parallel combination 10 nF and 8 Ω. This snubber lowers the Q factor of any resonance in the bus. That resonance will act as a load on the high gain amplifier that is the GaN FET and can lead to instability. For very high current, an RC snubber is recommended for the switching node. This will increase switching loss, so this is only recommended at high power levels where the losses are a very small percentage of the total power. GAN041-650WSB Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 9 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12. Package outline Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 A E SOT429 E1 A2 E2/2 D2 Q S E2 ØP D D1 ØP1 1 2 3 L1 A1 b2 (2x) b4 L b (3x) e (2x) c 0 20 mm scale øP øP1 Q S 3.658 7.315 5.740 6.299 3.556 7.061 5.486 6.045 Dimensions (mm are the original dimensions) Unit mm A A1 A2 b b2 b4 c D D1 D2 E E1 E2 max 5.156 2.507 2.108 1.397 2.387 3.429 0.889 21.082 17.441 1.321 16.027 14.148 5.225 nom min 4.902 2.253 1.854 0.991 1.651 2.591 0.381 20.828 17.187 1.067 15.773 13.894 4.318 E2/2 2.613 2.159 e 5.436 L L1 20.320 4.445 20.066 3.937 sot429_po Outline version SOT429 References IEC JEDEC JEITA European projection Issue date 19-08-19 19-08-20 TO-247 Fig. 22. Package outline TO-247 (SOT429) GAN041-650WSB Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 10 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 13. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal GAN041-650WSB Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 11 / 12 GAN041-650WSB Nexperia 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 4 11. Application information..............................................8 12. Package outline........................................................ 10 13. Legal information......................................................11 © Nexperia B.V. 2021. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 12 January 2021 GAN041-650WSB Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2021 © Nexperia B.V. 2021. All rights reserved 12 / 12