TQM150NB04CR RLG

TQM150NB04CR Taiwan Semiconductor AUTOMOTIVE N-Channel 40V 175°C MOSFET FEATURES PRODUCT SUMMARY ● AEC-Q101 Qualified PARAMETER VALUE UNIT VDS 40 V ● 100% UIS and Rg Tested ● 175°C Operating Junction Temperature ● Wettable Flank Package RDS(on) (max) ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 VGS = 10V 15 VGS = 7V 21 mΩ Qg 20 nC APPLICATIONS ● 12V Automotive Systems ● Solenoid and Motor Control ● Automotive Transmission Control ● DC-DC Converters PDFN56U Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C (Note 1) TA = 25°C Pulsed Drain Current ID 41 A 10 IDM 164 A Single Pulse Avalanche Current (Note 2) IAS 16 A Single Pulse Avalanche Energy (Note 2) EAS 38 mJ Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range PD PD 56 W 19 3.1 W 1 TJ, TSTG - 55 to +175 °C SYMBOL MAXIMUM UNIT Thermal Resistance – Junction to Case RӨJC 2.7 °C/W Thermal Resistance – Junction to Ambient RӨJA 48 °C/W THERMAL RESISTANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is 2 determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper. 1 Version: A2003 TQM150NB04CR Taiwan Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.8 2.5 3.8 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- -- 500 -- 9 15 -- 16 26 VGS = 0V, VDS = 40V VGS = 0V, VDS = 40V Drain-Source Leakage Current IDSS TJ = 125°C VGS = 0V, VDS = 40V TJ = 175°C VGS = 10V, ID = 10A VGS = 10V, ID = 10A, Drain-Source On-State Resistance TJ = 125°C (Note 3) VGS = 10V, ID = 10A, -- 20 33 -- 10 21 gfs -- 38 -- Qg -- 20 -- Qg -- 15 -- Qgs -- 5.4 -- Qgd -- 4.7 -- Ciss -- 1044 -- Coss -- 122 -- Crss -- 64 -- Rg 0.8 2.5 5 td(on) -- 5 -- tr -- 6 -- td(off) -- 14 -- tf -- 5 -- VSD -- -- 1.2 V VGS = 7V, ID = 8A Forward Transconductance Dynamic VDS = 10V, ID = 10A mΩ RDS(on) TJ = 175°C (Note 3) µA S (Note 4) VGS = 10V, VDS = 20V, Total Gate Charge ID = 10A Total Gate Charge VGS = 7V, VDS = 20V, Gate-Source Charge ID = 8A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 20V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz f = 1.0MHz nC pF Ω (Note 4) Turn-On Delay Time Rise Time VGS = 10V, VDS = 20V, Turn-Off Delay Time ID = 10A, RG = 2Ω Fall Time ns Source-Drain Diode Diode Forward Voltage (Note 3) VGS = 0V, IS = 10A Reverse Recovery Time IS = 10A, trr -- 14 -- ns Reverse Recovery Charge di/dt = 100A/μs Qrr -- 7 -- nC Notes: 1. Silicon limited current only. 2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 50Ω, IAS = 16A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. 2 Version: A2003 TQM150NB04CR Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE TQM150NB04CR RLG PACKAGE PACKING PDFN56U 2,500pcs / 13” Reel 3 Version: A2003 TQM150NB04CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 VGS=10V VGS=7V VGS=6V VGS=5V 30 ID, Drain Current (A) ID, Drain Current (A) 40 VGS=4.5V 20 10 30 20 25℃ -55℃ 10 175℃ 0 0 0 1 2 3 0 4 On-Resistance vs. Drain Current VGS=7V 0.01 VGS=10V 0.005 4 5 0 VDS=20V ID=10A 8 6 4 2 0 0 10 20 30 40 50 0 5 On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=10A 1.5 1 0.5 0 0 25 50 15 20 On-Resistance vs. Gate-Source Voltage 2.5 -75 -50 -25 10 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 3 Gate-Source Voltage vs. Gate Charge 0.015 2 2 10 0.02 VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 75 100 125 150 175 0.04 0.035 0.03 0.025 0.02 0.015 ID=10A 0.01 0.005 0 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 4 Version: A2003 TQM150NB04CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage 1600 C, Capacitance (pF) 1400 1200 Ciss 1000 800 600 400 200 Coss Crss 0 0 1.2 ID=2mA 1.1 1 0.9 0.8 10 20 30 -75 -50 -25 40 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case 25 50 75 100 125 150 175 Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 ID, Drain Current (A) 0 TJ, Junction Temperature (°C) RDS(on) 100 10 SINGLE PULSE RӨJC=2.7°C/W TC=25°C 1 10 175℃ 25℃ -55℃ 1 0.1 0.1 1 10 100 0.2 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=2.7°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 5 Version: A2003 TQM150NB04CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56U SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 150NB04 YWWLF Y WW L F _ = Year Code = Week Code (01~52) = Lot Code (1~9,A~Z) = Factory Code = AEC-Q101 Qualified 6 Version: A2003 TQM150NB04CR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: A2003