TSM033NA03CR RLG

TSM033NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 129A, 3.3mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive loss PARAMETER VALUE UNIT VDS 30 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 RDS(on) VGS = 10V 3.3 (max) VGS = 4.5V 4.4 mΩ Qg nC en de d 16 APPLICATION ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switching eco mm PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER No tR Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25°C (Note 1) Pulsed Drain Current (Note 2) Single Pulsed Avalanche Current (Note 2) Single Pulsed Avalanche Energy Total Power Dissipation LIMIT UNIT VDS 30 V VGS ±20 V ID TA = 25°C Total Power Dissipation SYMBOL TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 129 21 A IDM 516 A IAS EAS 29 126 A mJ PD PD 96 19 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.3 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: B1610 TSM033NA03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.6 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 Drain-Source Leakage Current IDSS VGS = 0V, VDS = 30V TJ = 125°C VGS = 10V, ID = 21A (Note 3) VGS = 4.5V, ID = 21A Forward Transconductance VDS = 5V, ID = 21A gfs (Note 4) VGS = 10V, VDS = 15V, Total Gate Charge ID = 21A Total Gate Charge ID = 21A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 15V Output Capacitance f = 1.0MHz Gate Resistance Switching e co Reverse Transfer Capacitance f = 1.0MHz (Note 4) VGS = 10V, VDS = 15V, tR Turn-On Delay Time Turn-On Rise Time ID = 12A, RG = 10Ω, Turn-Off Delay Time 2.7 3.3 -- 3.6 4.4 -- 69 -- RL = 1.25Ω Turn-Off Fall Time mΩ S Qg -- 31 -- Qg -- 16 -- Qgs -- 5.6 -- Qgd -- 5.5 -- Ciss -- 1850 -- Coss -- 418 -- Crss -- 189 -- Rg 0.4 1.4 2.8 td(on) -- 16.3 -- tr -- 7.8 -- td(off) -- 47 -- tf -- 11.5 -- VSD -- -- 1.2 V mm VGS = 4.5V, VDS = 15V, Gate-Source Charge -- en Dynamic (Note 3) RDS(on) de Drain-Source On-State Resistance µA d VGS = 0V, VDS = 30V nC pF Ω ns No Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 21A Reverse Recovery Time IS = 21A , trr -- 32 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 26 -- nC Notes: 1. 2. 3. 4. Silicon limited current only. L = 0.3mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 29A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM033NA03CR RLG PACKAGE PACKING PDFN56 2,500pcs / 13” Reel 2 Version: B1610 TSM033NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 VGS=3V 24 16 8 32 24 25℃ d 32 16 de VGS=10V VGS=5V VGS=4.5V VGS=4V VGS=3.5V ID, Drain Current (A) ID, Drain Current (A) 40 8 150℃ 0 0 1 2 3 0 4 2 3 4 Gate-Source Voltage vs. Gate Charge mm On-Resistance vs. Drain Current 0.0055 0.005 VDS=15V ID=21A 8 6 e co 0.0045 VGS, Gate to Source Voltage (V) 10 0.006 0.004 VGS=4.5V 0.0035 0.003 0.0025 tR RDS(ON), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) VGS=10V 0.002 0 8 16 24 32 4 2 0 0 40 5 10 No On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Ω) 1.8 1.6 1.4 1.2 VGS=10V ID=21A 0.8 0.6 -75 -50 -25 0 25 50 75 20 25 30 35 On-Resistance vs. Gate-Source Voltage 2 1 15 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ en 0 100 125 150 0.01 0.008 0.006 0.004 ID=21A 0.002 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 3 Version: B1610 TSM033NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage 1500 1000 COSS 500 0 0.9 0.8 0 5 10 15 20 25 30 -75 -50 -25 0 25 75 100 125 150 Source-Drain Diode Forward Current vs. Voltage mm Maximum Safe Operating Area, Junction-to-Case 1000 50 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) 25℃ 10 e co 100 IS, Reverse Drain Current (A) 100 RDS(ON) 10 SINGLE PULSE RӨJC=1.3°C/W TC=25°C 1 0.1 tR ID, Drain Current (A) 1 en CRSS ID=1mA 1.1 d CISS 1.2 de 2000 BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 2500 1 10 -55℃ 1 150℃ 0.1 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) No VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=1.3°C/W 1 0.1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.01 0.001 0.00001 0.0001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.001 0.01 0.1 t, Square Wave Pulse Duration (sec) 4 Version: B1610 TSM033NA03CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) mm en de d PDFN56 No tR e co SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 033NA03 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: B1610 TSM033NA03CR No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B1610