TSM045NA03CR
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 108A, 4.5mΩ
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
PARAMETER
VALUE
UNIT
VDS
30
V
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
RDS(on)
VGS = 10V
4.5
(max)
VGS = 4.5V
6.3
Qg
9
nC
de
APPLICATIONS
mΩ
d
FEATURES
● DC-DC Converters
en
● Battery Power Management
● ORing FET/Load Switching
e co
mm
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
tR
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25°C
(Note 1)
No
Pulsed Drain Current
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
Total Power Dissipation
LIMIT
UNIT
VDS
30
V
VGS
±20
V
ID
TA = 25°C
Total Power Dissipation
SYMBOL
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
108
18
A
IDM
432
A
IAS
EAS
26
104
A
mJ
PD
PD
89
17.8
2.6
0.5
W
W
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
1.4
°C/W
Junction to Ambient Thermal Resistance
RӨJA
48
°C/W
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
1.2
2
2.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
--
--
1
--
--
100
Drain-Source Leakage Current
IDSS
VGS = 0V, VDS = 30V
TJ = 125°C
VGS = 10V, ID = 18A
(Note 3)
VGS = 4.5V, ID = 18A
Forward Transconductance
VDS = 5V, ID = 18A
gfs
(Note 4)
VGS = 10V, VDS = 15V,
Total Gate Charge
ID = 18A
Total Gate Charge
ID = 18A
Gate-Drain Charge
Input Capacitance
VGS = 0V, VDS = 15V
Output Capacitance
f = 1.0MHz
Gate Resistance
Switching
e co
Reverse Transfer Capacitance
f = 1.0MHz
(Note 4)
tR
Turn-On Delay Time
3.6
4.5
--
5.5
6.3
--
47
--
Turn-On Rise Time
VGS = 10V, VDS = 15V,
Turn-Off Delay Time
ID = 18A, RG = 2Ω,
Turn-Off Fall Time
mΩ
S
Qg
--
19
--
Qg
--
9
--
Qgs
--
4
--
Qgd
--
3.7
--
Ciss
--
1194
--
Coss
--
421
--
Crss
--
97
--
Rg
0.4
1.2
2.4
td(on)
--
5.4
--
tr
--
2.2
--
td(off)
--
12.6
--
tf
--
2
--
VSD
--
--
1.2
V
mm
VGS = 4.5V, VDS = 15V,
Gate-Source Charge
--
en
Dynamic
(Note 3)
RDS(on)
de
Drain-Source On-State Resistance
µA
d
VGS = 0V, VDS = 30V
nC
pF
Ω
ns
No
Source-Drain Diode
Forward Voltage
(Note 3)
VGS = 0V, IS = 18A
Reverse Recovery Time
IS = 18A ,
trr
--
23
--
ns
Reverse Recovery Charge
dI/dt = 100A/μs
Qrr
--
17
--
nC
Notes:
1.
2.
3.
4.
Silicon limited current only.
L = 0.3mH, VGS = 10V, VDD = 50V, RG = 25Ω, IAS = 26A, Starting TJ = 25°C
Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM045NA03CR RLG
PACKAGE
PACKING
PDFN56
2,500pcs / 13” Reel
2
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
40
40
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
VGS=4V
24
16
VGS=3V
8
0
25℃
24
16
150℃
-55℃
8
0
0
1
2
3
4
0
1
3
4
Gate-Source Voltage vs. Gate Charge
mm
On-Resistance vs. Drain Current
0.01
VGS=4.5V
VDS=15V
ID=18A
8
6
eco
0.006
VGS, Gate to Source Voltage (V)
10
0.008
0.004
VGS=10V
No
tR
0.002
0
0
8
16
24
32
4
2
0
40
0
4
VGS=10V
ID=18A
1.4
1.2
1
0.8
0.6
-75
-50
-25
0
25
50
75
100
125
12
16
20
On-Resistance vs. Gate-Source Voltage
150
RDS(on), Drain-Source On-Resistance (Ω)
On-Resistance vs. Junction Temperature
1.8
1.6
8
Qg, Gate Charge (nC)
ID, Drain Current (A)
RDS(on), Drain-Source On-Resistance
(Normalized)
2
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
RDS(ON), Drain-Source On-Resistance (Ω)
32
en
de
d
ID, Drain Current (A)
ID, Drain Current (A)
VGS=3.5V
32
TJ, Junction Temperature (°C)
0.02
0.016
0.012
0.008
ID=18A
0.004
0
3
4
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
3
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
CISS
1200
1000
800
600
400
COSS
200
CRSS
1.1
1
0.9
0.8
0
5
10
15
20
25
en
0
-75
30
-50
-25
0
25
50
75
100 125 150
TJ, Junction Temperature (°C)
VDS, Drain to Source Voltage (V)
Source-Drain Diode Forward Current vs. Voltage
mm
Maximum Safe Operating Area, Junction-to-Case
RDS(ON)
100
IS, Reverse Drain Current (A)
100
1000
10
e co
100us
10
1ms
SINGLE PULSE
RӨJC=1.4°C/W
TC=25°C
1
0.1
10ms
DC
tR
ID, Drain Current (A)
ID=1mA
d
C, Capacitance (pF)
1400
1.2
de
BVDSS (Normalized)
Drain-Source Breakdown Voltage
Capacitance vs. Drain-Source Voltage
1
10
25℃
150℃
1
-55℃
0.1
0.2
100
VDS, Drain to Source Voltage (V)
0.4
0.6
0.8
1
1.2
No
VSD, Body Diode Forward Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
10
SINGLE PULSE
RӨJC=1.4°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.01
0.1
t, Square Wave Pulse Duration (sec)
4
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
mm
en
de
d
PDFN56
No
tR
e co
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
TSC
045NA03
GYWWF
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
5
Version: B1610
TSM045NA03CR
No
tR
e co
mm
en
de
d
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: B1610
