1N5236B A0G

1N5221B - 1N5263B Taiwan Semiconductor 500mW, 5% Tolerance Zener Diodes FEATURES KEY PARAMETERS ● Wide Zener voltage range selection: 2.4V to 56V ● VZ tolerance selection of ± 5% ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 2.4-56 V PD 500 mW VF at IF=200mA 1.1 V TJ Max. 200 °C APPLICATIONS ● ● ● ● Low voltage stabilizers or voltage references Adapters Lighting application On-board DC/DC converter Package DO-35 Configuration Single die MECHANICAL DATA ● Case: DO-35 ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: Indicated by cathode band ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Power dissipation SYMBOL VALUE UNIT PD 500 mW VF 1.1 V Junction temperature range TJ 200 °C Storage temperature range TSTG 200 °C Forward voltage IF=200mA 1 Version:G1804 1N5221B - 1N5263B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) ZENER VOLTAGE TEST TEST LEAKAGE CURRENT CURRENT ZZK @ IZK IZK IR @ V R mA REGULAR IMPEDANCE CURRENT PART NUMBER VZ @ IZT IZT V mA Nominal ZZT @ IZT Ω Ω Max. Max. µA V Max. 1N5221B 2.4 20 30 1200 0.25 100 1.0 1N5222B 2.5 20 30 1250 0.25 100 1.0 1N5223B 2.7 20 30 1300 0.25 75 1.0 1N5224B 2.8 20 30 1400 0.25 75 1.0 1N5225B 3.0 20 29 1600 0.25 50.0 1.0 1N5226B 3.3 20 28 1600 0.25 25.0 1.0 1N5227B 3.6 20 24 1700 0.25 15.0 1.0 1N5228B 3.9 20 23 1900 0.25 10.0 1.0 1N5229B 4.3 20 22 2000 0.25 5.0 1.0 1N5230B 4.7 20 19 1900 0.25 5.0 2.0 1N5231B 5.1 20 17 1600 0.25 5.0 2.0 1N5232B 5.6 20 11 1600 0.25 5.0 3.0 1N5233B 6.0 20 7 1600 0.25 5.0 3.5 1N5234B 6.2 20 7 1000 0.25 5.0 4.0 1N5235B 6.8 20 5 750 0.25 3.0 5.0 1N5236B 7.5 20 6 500 0.25 3.0 6.0 1N5237B 8.2 20 8 500 0.25 3.0 6.5 1N5238B 8.7 20 8 600 0.25 3.0 6.5 1N5239B 9.1 20 10 600 0.25 3.0 7.0 1N5240B 10 20 17 600 0.25 2.0 8 1N5241B 11 20 22 600 0.25 1.0 8.4 1N5242B 12 20 30 600 0.25 0.5 9 1N5243B 13 9.5 13 600 0.25 0.1 10 1N5244B 14 9.0 15 600 0.25 0.1 10 1N5245B 15 8.5 16 600 0.25 0.1 11 1N5246B 16 7.8 17 600 0.25 0.1 12 1N5247B 17 7.4 19 600 0.25 0.1 13 1N5248B 18 7.0 21 600 0.25 0.1 14 1N5249B 19 6.6 23 600 0.25 0.1 14 1N5250B 20 6.2 25 600 0.25 0.1 15 1N5251B 22 5.6 29 600 0.25 0.1 17 1N5252B 24 5.2 33 600 0.25 0.1 18 1N5253B 25 5.0 35 600 0.25 0.1 18 1N5254B 27 4.6 41 600 0.25 0.1 21 1N5255B 28 4.5 44 600 0.25 0.1 21 1N5256B 30 4.2 49 600 0.25 0.1 23 1N5257B 33 3.8 58 700 0.25 0.1 25 1N5258B 36 3.4 70 700 0.25 0.1 27 2 Version:G1804 1N5221B - 1N5263B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) TEST ZENER VOLTAGE TEST LEAKAGE CURRENT CURRENT ZZK @ IZK IZK IR @ V R mA REGULAR IMPEDANCE CURRENT PART NUMBER VZ @ IZT IZT V mA Nominal ZZT @ IZT Ω Ω Max. Max. µA V Max. 1N5259B 39 3.2 80 800 0.25 0.1 30 1N5260B 43 3.0 93 900 0.25 0.1 33 1N5261B 47 2.7 105 1000 0.25 0.1 36 1N5262B 51 2.5 125 1100 0.25 0.1 39 1N5263B 56 2.2 150 1300 0.25 0.1 43 Notes: 1. Nominal zener voltages between the voltages shown and tighter voltage, for detalied information on price, availability and delivery. 2. The zener voltage(VZ) is tested under pulse condition. The measured VZ is guaranteed to be within specification with device junction in thermal equilibrium. 3. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the DC zener current (IZT) is superimposed to IZT. 4. Zener voltage has a standard tolerance on the nominal zener voltage of ±5%. ORDERING INFORMATION PART NO. (Note 1) PACKAGE PACKING 1N52xxB R0 DO-35 10K / 14" Reel 1N52xxB R0G DO-35 10K / 14" Reel 1N52xxB A0 DO-35 5K / Box (Ammo) 1N52xxB A0G DO-35 5K / Box (Ammo) Note: 1. "xx" defines part no. from 1N5221B to 1N5263B 3 Version:G1804 1N5221B - 1N5263B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Power dissipation VS. Ambient temperature 600 PD - Power Dissipation (mW) 500 400 300 200 100 0 0 40 80 120 160 200 Tamb - Ambient Temperature (°C) 4 Version:G1804 1N5221B - 1N5263B Taiwan Semiconductor PACKAGE OUTLINE DIMENSION DO-35 DIM. MARKING DIAGRAM Unit (mm) Unit (inch) Min Max Min Max A 0.34 0.60 0.013 0.024 B 2.90 5.08 0.114 0.200 C 25.40 38.10 1.000 1.500 D 1.30 2.28 0.051 0.090 MARKING DIAGRAM 1N 52 XX B 5 Version:G1804 1N5221B - 1N5263B Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version:G1804