TSM301K12CQ RFG

TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Anode 6. Cathode 2. NC 5. Gate 3. Drain 4. Source -20 ID (A) 94 @ VGS = -4.5V -2.8 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY VR (V) VF (V) IF (A) 20 0.5 2 Block Diagram Features ● Configuration with MOSFET and Low Vf SKY ● Package low profile 0.75mm (Typ) ● Independent Pin Out for Design Flexibility Application ● Load Switch for Portable Applications ● DC-DC Buck Circuit ● Li-ion Battery Applications ● Cellular Charger Switch Ordering Information Part No. Package TSM301K12CQ RFG TDFN 2x2 Note: “G” denotes for Halogen Free P-Channel MOSFET with Schottky Diode Packing 3Kpcs / 7” Reel MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID -4.5 A IDM -8 A 6.5 W Continuous Drain Current (Note 1,2) Pulsed Drain Current o Maximum Power Dissipation TC=25 C o TA=25 C (Note 2) Operating Junction Temperature PD TJ Operating Junction and Storage Temperature Range TJ, TSTG 1.56 W +150 o - 55 to +150 o C C Schottky Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Reverse Voltage VR 20 V Average Forward Current (Note 1,2) IF 2 A IFM 5 A 6.8 W 1.47 W Pulsed Forward Current o Maximum Power Dissipation (Note 1) TC=25 C o TA=25 C (Note 2) 1/7 PD Version: C12 TSM301K12 20V P-Channel MOSFET with Schottky Diode Thermal Resistance Ratings Parameter Symbol Limit Unit T≤ 5s Steady State 80 120 o RӨJA T ≤ 5s Steady State 85 130 o RӨJA MOSFET Thermal Resistance-Junction to Ambient C/W C/W o Schottky Thermal Resistance-Junction to Ambient C/W C/W o Notes: 1. Surface mounted on 1” x 1” (2 oz) FAR4 board, 2. t ≤ 5s MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS -20 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.5 -- -- V Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS =-20V, VGS = 0V IDSS -- -- -1 µA -- -- 94 -- -- 131 -- -- 185 VSD -- -- -1.2 Qg -- 5.2 10 Qgs -- 1.36 -- Qgd -- 0.6 -- Ciss -- 5.2 -- Coss -- 9.7 -- Crss -- 19 -- td(on) -- 29 -- tr -- 295 -- td(off) -- 170 -- tf -- 65 -- Symbol Min Typ Max Unit VF -- -- 0.5 V -- 0.015 0.08 -- 0.02 0.10 -- 60 -- VGS = -4.5V, ID = -2.8A a Drain-Source On-State Resistance VGS = -2.5V, ID = -2.3A RDS(ON) VGS = -1.8V, ID = -0.54A Diode Forward Voltage IS = -1.6A, VGS = 0V mΩ V b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = -6V, ID = -2.8A, VGS = -5V VGS=0V, VDS=-6V, f =1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VDS=-15V, RD=15Ω, Turn-Off Delay Time RG=6Ω, VGS=-10V Turn-Off Fall Time nS Schottky Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Forward Voltage Drop IF = 1A Maximum Reverse Leakage VR = 5V Current VR = 20V IRm Junction Capacitance VR = 10V CT Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/7 mA pF Version: C12 TSM301K12 20V P-Channel MOSFET with Schottky Diode MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: C12 TSM301K12 20V P-Channel MOSFET with Schottky Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: C12 TSM301K12 20V P-Channel MOSFET with Schottky Diode SCHOTTKY Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Typical Forward Current Derating Curve Typical Instantaneous Forward Characteristics Typical Reverse Characteristics Typical Junction Capacitance Maximum Repetitive Forward Surge Current 5/7 Version: C12 TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 Mechanical Drawing DIM A B C D E F G H J K MILLIMETERS MIN MAX 1.95 2.05 1.95 2.05 0.50 0.60 0.30 0.40 0.20 0.30 0.65 BSC 0.75 0.85 0.70 0.80 -0.05 0.195 0.211 INCHES MIN MAX 0.0768 0.0807 0.0768 0.0807 0.0197 0.0236 0.0118 0.0157 0.0079 0.0118 0.0256 BSC 0.0295 0.0335 0.0276 0.0315 0.0020 0.0077 0.0083 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/7 Version: C12 TSM301K12 20V P-Channel MOSFET with Schottky Diode Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: C12