G3R45MT17D
1700 V 45 mΩ SiC MOSFET
TM
Silicon Carbide MOSFET
VDS
=
RDS(ON)(Typ.) =
ID (TC = 100°C) =
N-Channel Enhancement Mode
Features
•
•
•
•
•
•
•
•
Package
D
G3R™ Technology with +15 V Gate Drive
Softer RDS(ON) v/s Temperature Dependency
LoRing™ - Electromagnetically Optimized Design
Smaller RG(INT) and Lower QG
Low Device Capacitances (COSS, CRSS)
Superior Cost-Performance Index
Robust Body Diode with Low VF and Low QRR
Industry-Leading UIL & Short-Circuit Robustness
G
RoHS
S
D = Drain
G = Gate
S = Source
TO-247-3
Advantages
•
•
•
•
•
•
•
•
1700 V
45 mΩ
37 A
REACH
Applications
Compatible with Commercial Gate Drivers
Low Conduction Losses at all Temperatures
Reduced Ringing
Faster and More Efficient Switching
Lesser Switching Spikes and Lower Losses
Better Power Density and System Efficiency
Ease of Paralleling without Thermal Runaway
Higher System Reliability
•
•
•
•
•
•
•
•
Electric Vehicle Fast Charging
Solar Inverters
Traction Inverters
Smart Grid and HVDC
High Voltage DC-DC Converters
Switched Mode Power Supply
Wind Energy Converters
Pulsed Power
Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated)
Parameter
Drain-Source Voltage
Gate-Source Voltage (Dynamic)
Gate-Source Voltage (Static)
Symbol
VDS(max)
VGS(max)
VGS(op)
Continuous Forward Current
ID
Pulsed Drain Current
Power Dissipation
Non-Repetitive Avalanche Energy
Operating and Storage Temperature
ID(pulse)
PD
EAS
Tj , Tstg
Conditions
VGS = 0 V, ID = 100 µA
Recommended Operation
TC = 25°C, VGS = -5 / +15 V
TC = 100°C, VGS = -5 / +15 V
TC = 135°C, VGS = -5 / +15 V
tP ≤ 3µs, D ≤ 1%, VGS = 15 V, Note 1
Tc = 25°C
L = 3.9 mH, IAS = 17.5 A
Values
1700
-10 / +20
-5 / +15
52
37
27
120
364
592
-55 to 175
Unit
V
V
V
Note
A
Fig. 15
A
W
mJ
°C
Fig. 14
Fig. 16
Unit
Note
°C/W
g
Nm
Fig. 13
Thermal/Package Characteristics
Parameter
Symbol
Thermal Resistance, Junction - Case
Weight
Mounting Torque
RthJC
WT
TM
Conditions
Min.
Values
Typ.
0.30
6.1
Screws to Heatsink
Max.
0.41
1.1
Note 1: Pulse Width tP Limited by Tj(max)
Rev 21/May
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 1 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
TM
Electrical Characteristics (At TC = 25°C Unless Otherwise Stated)
Parameter
Symbol
Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VDSS
IDSS
Gate Source Leakage Current
IGSS
VGS = 0 V, ID = 100 µA
VDS = 1700 V, VGS = 0 V
VDS = 0 V, VGS = 20 V
VDS = 0 V, VGS = -10 V
VDS = VGS, ID = 30.0 mA
VDS = VGS, ID = 30.0 mA, Tj = 175°C
VDS = 10 V, ID = 35 A
VDS = 10 V, ID = 35 A, Tj = 175°C
VGS = 15 V, ID = 35 A
VGS = 15 V, ID = 35 A, Tj = 175°C
Gate Threshold Voltage
VGS(th)
Transconductance
gfs
Drain-Source On-State Resistance
RDS(ON)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
Coss Stored Charge
Effective Output Capacitance (Energy
Related)
Effective Output Capacitance (Time
Related)
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
Internal Gate Resistance
Turn-On Switching Energy
(Body Diode)
Turn-Off Switching Energy
(Body Diode)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Eoss
Qoss
VDS = 1000 V, VGS = 0 V
f = 1 MHz, VAC = 25mV
Min.
1700
Values
Typ.
100
-100
1.8
2.70
1.90
16.8
17.4
45
94
3199
86
15.3
57
172
114
Co(tr)
172
EOn
EOff
td(on)
tr
td(off)
tf
VDS = 1000 V, VGS = -5 / +15 V
ID = 35 A
Per IEC607478-4
f = 1 MHz, VAC = 25 mV
Tj = 25°C, VGS = -5/+15V, RG(ext) = 1 Ω, L =
60.0 µH, ID = 35 A, VDD = 1200 V
VDD = 1200 V, VGS = -5/+15V
RG(ext) = 1 Ω, L = 60.0 µH, ID = 35 A
Timing relative to VDS, Inductive load
33
37
106
1.3
Unit
Note
V
µA
1
Co(er)
Qgs
Qgd
Qg
RG(int)
Max.
62
nA
V
Fig. 9
S
Fig. 4
mΩ
Fig. 5-8
pF
Fig. 11
µJ
nC
Fig. 12
pF
Note 2
nC
Fig. 10
Ω
751
µJ
Fig. 22,26
ns
Fig. 24
345
33
19
17
12
*The chip technology was characterized up to 200 V/ns. The measured dV/dt was limited by measurement test setup and package.
Note 2: Co(er), a lumped capacitance that gives same stored energy as C OSS while V DS is rising from 0 to 1000V.
Co(tr), a lumped capacitance that gives same charging times as COSS while V DS is rising from 0 to 1000V.
Rev 21/May
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 2 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
TM
Reverse Diode Characteristics
Parameter
Diode Forward Voltage
Continuous Diode Forward Current
Diode Pulse Current
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Rev 21/May
Symbol
VSD
IS
IS(pulse)
trr
Qrr
Irrm
trr
Qrr
Irrm
Conditions
VGS = -5 V, ISD = 17 A
VGS = -5 V, ISD = 17 A, Tj = 175°C
VGS = -5 V, Tc = 100°C
VGS = -5 V, Note 1
VGS = -5 V, ISD = 35 A, VR = 1200 V
dif/dt = 2200 A/µs, Tj = 25°C
VGS = -5 V, ISD = 35 A, VR = 1200 V
dif/dt = 2200 A/µs, Tj = 175°C
Min.
Values
Typ.
4.5
4.3
33
132
31
305
8
53
1144
17
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Max.
Unit
Note
V
Fig. 17-18
A
A
ns
nC
A
ns
nC
A
Page 3 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
Figure 1: Output Characteristics (Tj = 25°C)
ID = f(VDS, VGS); tP = 250 µs
Figure 3: Output Characteristics (VGS = 15 V)
ID = f(VDS, T);
j tP = 250 µs
Rev 21/May
TM
Figure 2: Output Characteristics (Tj = 175°C)
ID = f(VDS, VGS); tP = 250 µs
Figure 4: Transfer Characteristics (VDS = 10 V)
ID = f(VGS, T);
j tP = 100 µs
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 4 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
Figure 5: On-State Resistance v/s Temperature
RDS(ON) = f(T,j VGS); tP = 250 µs; ID = 35 A
Figure 7: Normalized On-State Resistance v/s Temperature
RDS(ON) = f(T);
j tP = 250 µs; ID = 35 A; VGS = 15 V
Rev 21/May
TM
Figure 6: On-State Resistance v/s Drain Current
RDS(ON) = f(T,I
j D); tP = 250 µs; VGS = 15 V
Figure 8: On-State Resistance v/s Gate Voltage
RDS(ON) = f(T,V
j GS); tP = 250 µs; I D = 35 A
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 5 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
Figure 9: Threshold Voltage Characteristics
VGS(th) = f(T);
j VDS = VGS; ID = 30.0 mA
Figure 11: Capacitance v/s Drain-Source Voltage
f = 1 MHz; VAC = 25mV
Rev 21/May
TM
Figure 10: Gate Charge Characteristics
ID = 35 A; VDS = 1000 V; Tc = 25°C
Figure 12: Output Capacitor Stored Energy
Eoss = f(VDS)
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 6 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
Figure 13: Transient Thermal Impedance
Zth,jc = f(tP,D); D = tP/T
Figure 15: Current De-rating Curve
ID = f(TC); Tj ≤ 175°C
Rev 21/May
TM
Figure 14: Safe Operating Area (Tc = 25°C)
ID = f(VDS, tP); Tj ≤ 175°C; D = 0
Figure 16: Power De-rating Curve
PD = f(TC); Tj ≤ 175°C
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 7 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
Figure 17: Body Diode Characteristics (Tj = 25°C)
ID = f(VDS, VGS); tP = 250 µs
Figure 19: Third Quadrant Characteristics (Tj = 25°C)
ID = f(VDS, VGS); tP = 250 µs
Rev 21/May
TM
Figure 18: Body Diode Characteristics (Tj = 175°C)
ID = f(VDS, VGS); tP = 250 µs
Figure 20: Third Quadrant Characteristics (Tj = 175°C)
ID = f(VDS, VGS); tP = 250 µs
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 8 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
Figure 21: Inductive Switching Energy v/s Drain Current
(VDD = 1000V)
Tj = 25°C; VGS = -5/+15V; RG(ext) = 1 Ω; L = 60.0µH
Figure 23: Inductive Switching Energy v/s RG(ext)
(VDD = 1200V)
Tj = 25°C; VGS = -5/+15V; IDS = 35 A; L = 60.0µH
Rev 21/May
TM
Figure 22: Inductive Switching Energy v/s Drain Current
(VDD = 1200V)
Tj = 25°C; VGS = -5/+15V; RG(ext) = 1 Ω; L = 60.0µH
Figure 24: Switching Time v/s RG(ext)
(VDD = 1200V)
Tj = 25°C; VGS = -5/+15V; IDS = 35 A; L = 60.0µH
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 9 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
Figure 25: Inductive Switching Energy v/s Temperature
(VDD = 1200V)
Tj = 25°C; VGS = -5/+15V; RG(ext) = 1 Ω; IDS = 35 A; L = 60.0µH
Rev 21/May
TM
Figure 26: dV/dt v/s RG(ext)
(VDD = 1200V)
Tj = 25°C; VGS = -5/+15V; IDS = 35 A; L = 60.0µH
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 10 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
TM
Gate Charge Circuit
Gate Charge Waveform
VGS
D.U.T
RLoad
VDD
ID
IG(cont)
Gate Voltage (VGS)
VDS
QGD
QGS
Gate Charge (QG)
Switching Time Circuit
Switching Time Waveform
90%
Same device as the D.U.T.
LLoad
-5 V
VGS
10%
VDS
VGS
10%
10%
VDS
VDD
D.U.T.
RG
90%
ID
td(on)
td(off)
tr
ton
Rev 21/May
90%
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
tf
toff
Page 11 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
TM
Switching Energy Circuit
Switching Energy Waveform
EOFF = ∫ ID x VDS x dt
EON = ∫ ID x VDS x dt
Same device as the D.U.T.
LLoad
-5 V
Irr
VDS
VDS
VGS
VDD
D.U.T.
RG
ID
IDS
Reverse Recovery Circuit
Reverse Recovery Waveform
D.U.T.
LLoad
-5 V
IF
trr
IF
0 Level
VGS
RG
Same device
as the D.U.T.
90%
VDD
Irr
dIrr/dt in 10%
to 90% range
10%
Rev 21/May
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 12 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
TM
Package Dimensions
TO-247-3 Package Outline
0.170 (4.32)
0.216 (5.49)
0.190 (4.83)
0.205 (5.21)
0.620 (15.75)
0.635 (16.13)
0.530 (13.46)
0.557 (14.16)
0.059 (1.50)
0.098 (2.49)
0.085 (2.16)
0.108 (2.75)
0.212 (5.39)
0.244 (6.20)
0.047
(1.19)
0.238 (6.04)
0.248 (6.30.)
0.819
0.831
(20.80)
(21.10)
0.640 (16.25)
0.695 (17.65)
Ø 0.140 (3.56)
Ø 0.144 (3.65)
Ø 0.283 (7.19) REF
0.161 (4.10)
0.173 (4.40)
0.780
0.800
(19.81)
(20.32)
0.113 (2.87)
0.127 (3.22)
0.075 (1.91)
0.094 (2.39)
0.044 (1.12)
0.052 (1.33)
0.214 (5.44) BSC.
Recommended Solder Pad Layout
0.022 (0.55)
0.027 (0.69)
0.090 (2.29)
0.100 (2.55)
Package View
Case (D)
0.12 (3.05)
0.214 (5.44)
0.08 (2.03)
S
G
0.214 (5.44)
D
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS.
Rev 21/May
Latest Version at: www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D.pdf
Page 13 of 14
G3R45MT17D
1700 V 45 mΩ SiC MOSFET
TM
Compliance
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold
limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as
adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this
product can be obtained from your GeneSiC representative.
REACH Compliance
REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has
published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to
insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available
upon request.
Disclaimer
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Related Links
• SPICE Models:
https://www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D_SPICE.zip
• PLECS Models:
https://www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D_PLECS.zip
• CAD Models:
https://www.genesicsemi.com/sic-mosfet/G3R45MT17D/G3R45MT17D_3D.zip
• Gate Driver Reference: https://www.genesicsemi.com/technical-support
• Evaluation Boards:
https://www.genesicsemi.com/technical-support
• Reliability:
https://www.genesicsemi.com/reliability
• Compliance:
https://www.genesicsemi.com/compliance
• Quality Manual:
https://www.genesicsemi.com/quality
Revision History
• Rev 21/May: Added switching time and switching energy data
• Supersedes: Rev 20/Jun, Rev 20/Sep, Rev 21/Feb
www.genesicsemi.com/sic-mosfet/
Rev 21/May
Copyright© 2021 GeneSiC Semiconductor Inc.
All Rights Reserved.
Published by GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155, Dulles, VA 20166; USA
Page 14 of 14