C2M0160120D

VDS ID @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 1200 V 18 A 160 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits • • • • Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications • • • • Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters LED Lighting Power Supplies Part Number Package C2M0160120D TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Test Conditions VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse) PD TJ , Tstg 1 Parameter 18 12 A VGS = 20 V, TC = 25˚C Note Fig. 19 VGS = 20 V, TC = 100˚C Pulsed Drain Current 40 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 125 W TC=25˚C , TJ = 150 ˚C Fig. 20 -55 to +150 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1 8.8 Nm lbf-in C2M0160120D Rev. 5, 04-2021 1.6mm (0.063”) from case for 10s M3 or 6-32 screw Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. Max. Unit V VGS = 0 V, ID = 100 μA 2.9 4 V VDS = VGS, IDS = 2.5 mA V VDS = VGS, IDS = 2.5 mA, TJ = 150ºC 100 μA VDS = 1200 V, VGS = 0 V 250 nA VGS = 20 V, VDS = 0 V 1200 2.0 2.4 1 160 Drain-Source On-State Resistance 196 mΩ 290 3.8 VGS = 20 V, ID = 10 A VGS = 20 V, ID = 10A, TJ = 150ºC VDS= 20 V, IDS= 10 A Note Fig. 11 Fig. 4, 5, 6 gfs Transconductance Ciss Input Capacitance 606 Coss Output Capacitance 55 Crss Reverse Transfer Capacitance 5 Eoss Coss Stored Energy 28 μJ VAC = 25 mV Fig. 16 EAS Avalanche Energy, Single Pluse 600 mJ ID = 10A, VDD = 50V Fig. 29 EON Turn-On Switching Energy 121 EOFF Turn Off Switching Energy 48 μJ VDS = 800 V, VGS = -5/20 V, ID = 10A, RG(ext) = 2.5Ω, L= 434μH Fig. 25 td(on) Turn-On Delay Time 7 Rise Time 9 Turn-Off Delay Time 13 ns Fig. 27 Fall Time 14 VDD = 800 V, VGS = -5/20 V ID = 10 A RG(ext) = 2.5 Ω, RL = 80 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Internal Gate Resistance 6.5 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 11 Qgd Gate to Drain Charge 17 nC Qg Total Gate Charge 40 VDS = 800 V, VGS = -5/20 V ID = 10 A Per IEC60747-8-4 pg 21 tr td(off) tf RG(int) S Test Conditions 5.3 VDS= 20 V, IDS= 10 A, TJ = 150ºC VGS = 0 V pF Fig. 7 Fig. 17, 18 VDS = 1000 V f = 1 MHz Fig. 12 Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage IS Continuous Diode Forward Current Typ. Max. Unit 3.9 V 3.5 25 A trr Reverse Recovery Time 20 ns Qrr Reverse Recovery Charge 192 nC Irrm Peak Reverse Recovery Current 16 A Test Conditions VGS = -5 V, IF=5 A VGS = -5V, IF=5 A, TJ = 150 ºC Note Fig. 8,9, 10 TC = 25˚C Note 1 VGS = - 5 V, ISD = 10 A, VR = 800 V dif/dt = 2400 A/µs Note 1 Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol 2 Parameter RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance From Junction to Ambient C2M0160120D Rev. 5, 04-2021 Typ. Max. 0.9 1.0 40 Unit K/W Test Conditions Note Fig. 21 Typical Performance Drain-Source Current, IDS (A) 35 40 VGS = 20V Conditions: TJ = -55 °C tp = < 200 µs VGS = 18V 30 VGS = 16V 25 20 VGS = 14V 15 10 VGS = 12V 5 VGS = 10V 0 0.0 2.0 4.0 6.0 8.0 10.0 Conditions: TJ = 25 °C tp = < 200 µs 35 Drain-Source Current, IDS (A) 40 VGS = 20V VGS = 18V VGS = 16V 30 VGS = 14V 25 20 VGS = 12V 15 10 VGS = 10V 5 0 12.0 0.0 2.0 4.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 40 VGS = 16V 10.0 12.0 Conditions: IDS = 10 A VGS = 20 V tp < 200 µs 2.0 30 VGS = 20V VGS = 18V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 2.5 25 8.0 Figure 2. Output Characteristics TJ = 25 ºC Conditions: TJ = 150 °C tp = < 200 µs 35 6.0 Drain-Source Voltage, VDS (V) VGS = 14V 20 VGS = 12V 15 VGS = 10V 10 1.5 1.0 0.5 5 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -50 -25 0 Drain-Source Voltage, VDS (V) 400 320 TJ = 150 °C 240 TJ = 25 °C 160 TJ = -55 °C 80 0 5 10 15 20 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 C2M0160120D Rev. 5, 04-2021 25 100 125 150 350 300 30 VGS = 14 V 250 200 VGS = 16 V VGS = 18 V 150 VGS = 20 V 100 50 0 0 75 Conditions: IDS = 10 A tp < 200 µs 450 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 500 Conditions: VGS = 20 V tp < 200 µs 400 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 ºC 480 25 Junction Temperature, TJ (°C) -50 -25 0 25 50 75 Junction Temperature, TJ (°C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance -8 Conditions: VDS = 20 V tp < 200 µs TJ = 150 °C 15 TJ = 25 °C 10 TJ = -55 °C 5 0 0 2 4 6 8 10 12 -7 -6 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 20 -5 -4 VGS = -5 V -3 -15 -25 -30 Conditions: TJ = -55°C tp < 200 µs -35 -40 Figure 8. Body Diode Characteristic at -55 ºC -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 0 0 -5 -5 VGS = 0 V -10 VGS = -2 V -15 -20 -25 VGS = -5 V -10 VGS = 0 V -15 VGS = -2 V -20 -25 -30 -30 Conditions: TJ = 150°C tp < 200 µs -35 -40 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC 4.5 20 Gate-Source Voltage, VGS (V) 3.0 2.5 2.0 1.5 1.0 0.5 -25 0 25 50 75 Junction Temperature TJ (°C) 100 Figure 11. Threshold Voltage vs. Temperature C2M0160120D Rev. 5, 04-2021 -40 125 Conditions: IDS = 10 A IGS = 50 mA VDS = 800 V TJ = 25 °C 15 3.5 -50 -35 Figure 10. Body Diode Characteristic at 150 ºC Conditons VDS = VGS IDS = 2.5 mA 4.0 0.0 0 -10 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Threshold Voltage, Vth (V) 0 VGS = 0 V 14 Conditions: TJ = 25°C tp < 200 µs 4 -1 -20 Drain-Source Current, IDS (A) -5 Drain-Source Current, IDS (A) -6 -2 VGS = -2 V Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -3 -5 VGS = -5 V Gate-Source Voltage, VGS (V) -8 -4 150 10 5 0 -5 0 5 10 15 20 25 30 35 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 40 45 Typical Performance -7 -6 -5 -4 Drain-Source Current, IDS (A) VGS = 0 V -3 -2 -1 0 -8 0 -5 VGS = 5 V -10 VGS = 10 V -15 VGS = 15 V -20 VGS = 20 V -25 -7 -6 -5 -4 -3 -2 -1 0 VGS = 0 V VGS = 5 V -10 VGS = 10 V -15 VGS = 15 V -20 VGS = 20 V -25 -30 Conditions: TJ = -55 °C tp < 200 µs -40 Figure 13. 3rd Quadrant Characteristic at -55 ºC -8 -7 -6 -5 -4 -3 -2 -1 Drain-Source Voltage VDS (V) 0 VGS = 0 V Drain-Source Current, IDS (A) Conditions: TJ = 25 °C tp < 200 µs -10 VGS = 5 V -15 VGS = 15 V VGS = 20 V -20 -25 25 -30 Conditions: TJ = 150 °C tp < 200 µs 20 15 10 5 -35 0 -40 Drain-Source Voltage VDS (V) 0 200 Figure 15. 3rd Quadrant Characteristic at 150 ºC Coss 100 10 1 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C2M0160120D Rev. 5, 04-2021 1000 600 800 1000 1200 200 100 1 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Coss 10 Crss 0 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy Capacitance (pF) Capacitance (pF) 1000 -40 30 0 -5 VGS = 10 V -35 Figure 14. 3rd Quadrant Characteristic at 25 ºC Stored Energy, EOSS (µJ) -30 -35 Drain-Source Voltage VDS (V) 0 -5 Drain-Source Current, IDS (A) -8 Crss 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Typical Performance 20 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 140 Conditions: TJ ≤ 150 °C 18 16 14 12 10 8 6 4 2 0 -55 -30 -5 20 45 70 Case Temperature, TC (°C) 95 120 100 80 60 40 20 0 145 Figure 19. Continuous Drain Current Derating vs. Case Temperature -55 -30 20 45 70 Case Temperature, TC (°C) 95 120 1 0.5 0.1 100E-3 0.05 0.02 SinglePulse 10E-3 0.01 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 100 µs 100 ms 1.00 0.10 1 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 Figure 21. Transient Thermal Impedance (Junction - Case) 250 Switching Loss (µJ) 500 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -5V/+20V FWD = C4D08120A L = 434 μH 200 400 150 EOn 100 0 EOff 0 5 10 Drain to Source Current, IDS (A) 15 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDS = 600 V) C2M0160120D Rev. 5, 04-2021 10 100 1000 Drain-Source Voltage, VDS (V) Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -5V/+20V FWD = C4D08120A L = 434 μH ETotal 50 1 Figure 22. Safe Operating Area Switching Loss (µJ) 300 10 µs 1 ms 0.01 1E-6 145 1 µs Limited by RDS On 10.00 0.3 1E-3 6 -5 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Conditions: TJ ≤ 150 °C 120 ETotal 300 EOn 200 100 20 0 EOff 0 5 10 15 Drain to Source Current, IDS (A) 20 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDS = 800 V) 25 Typical Performance 600 400 Conditions: IDS = 10 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -5V/+20 V L = 434 μH FWD = C4D08120A 300 Switching Loss (µJ) 500 Switching Loss (µJ) 400 Conditions: TJ = 25 °C VDD = 800 V IDS = 10 A VGS = -5V/+20 V FWD = C4D08120A L = 434 μH ETotal 300 200 EOn 200 ETotal EOn 100 100 0 EOff EOff 0 5 10 15 20 External Gate Resistor RG(ext) (Ohms) 25 Conditions: TJ = 25 °C VDD = 800 V IDS = 10 A VGS = -5V/+20 V Rl = 80 Ω Switching Times (ns) 30 tr 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 tf td(off) 20 td(on) 10 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 Figure 28. Switching Times Definition Figure 27. Switching Times vs. RG(ext) 18 Conditons: VDD = 50 V 16 Avalanche Current (A) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 Time in Avalanche TAV (us) 150 Figure 29. Single Avalanche SOA curve 7 C2M0160120D Rev. 5, 04-2021 175 175 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 40 0 200 200 Test Circuit Schematic D1 L=256 uH VDC C4D05120A 5A, 1200V SiC Schottky CDC=42.3 uF Q2 RG D.U.T C2M0160120D Figure 30. Clamped Inductive Switching Waveform Test Circuit Q1 RG L=256 uH VDC CDC=42.3 uF D.U.T C2M0160120D VGS= - 5V RG Q2 C2M0160120D Figure 31. Body Diode Recovery Test Circuit ESD Ratings 8 ESD Test Total Devices Sampled Resulting Classification ESD-HBM All Devices Passed 1000V 2 (>2000V) ESD-MM All Devices Passed 400V C (>400V) ESD-CDM All Devices Passed 1000V IV (>1000V) C2M0160120D Rev. 5, 04-2021 9 C2M0160120D Rev. 5, 04-2021 Part Number Package Marking C2M0160120D TO-247-3 C2M0160120 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C2M0160120D Rev. 5, 04-2021 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power