C3M0065090D

C3M0065090D VDS 900 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 36 A 65 mΩ N-Channel Enhancement Mode Features • • • • • Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • • • • Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications • • • • Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking C3M0065090D TO-247-3 C3M0065090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 900 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25˚C Fig. 19 ID Continuous Drain Current ID(pulse) 36 23 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 90 A EAS Avalanche energy, Single pulse 110 mJ ID = 22A, VDD = 50V PD Power Dissipation 125 W TC=25˚C, TJ = 150 ˚C -55 to +150 ˚C TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0065090D Rev. B, 03-2017 Pulse width tP limited by Tjmax 1.6mm (0.063”) from case for 10s M3 or 6-32 screw Fig. 22 Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 900 1.8 2.1 3.5 1.6 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 5 mA V VDS = VGS, ID = 5 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 65 78 RDS(on) Drain-Source On-State Resistance 90 13.6 gfs Transconductance Ciss Input Capacitance 660 Coss Output Capacitance 60 Crss Reverse Transfer Capacitance 4.0 Eoss Coss Stored Energy 16 EON Turn-On Switching Energy (Body Diode FWD) 226 EOFF Turn Off Switching Energy (Body Diode FWD) 36 td(on) Turn-On Delay Time 35 Rise Time 11 Turn-Off Delay Time 23 Fall Time 9 tr td(off) tf RG(int) Internal Gate Resistance 4.7 Qgs Gate to Source Charge 7.5 Qgd Gate to Drain Charge 12 Qg Total Gate Charge VGS = 15 V, ID = 20 A mΩ VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= 20 A, TJ = 150ºC f = 1 MHz VAC = 25 mV μJ Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 600 V pF Fig. 11 Fig. 4, 5, 6 VGS = 15 V, ID = 20A, TJ = 150ºC S 11.6 Note Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 2.5Ω, L= 77 μH, TJ = 150ºC Fig. 26, Note 3 ns VDD = 400 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27 Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 30.4 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions Note 4.8 V VGS = -4 V, ISD = 10 A 4.4 V VGS = -4 V, ISD = 10 A, TJ = 150 °C 23.5 A VGS = -4 V Note 1 90 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 20 A, VR = 400 V dif/dt = 950 A/µs, TJ = 150 °C Note 1 Continuous Diode Forward Current Diode pulse Current trr Reverse Recover time 35 ns Qrr Reverse Recovery Charge 150 nC Irrm Peak Reverse Recovery Current 5.6 A Fig. 8, 9, 10 Thermal Characteristics Symbol Parameter Max. RθJC Thermal Resistance from Junction to Case 1.0 RθJA Thermal Resistance From Junction to Ambient 40 Unit Test Conditions °C/W Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0065090D Rev. B, 03-2017 Note Fig. 21 Typical Performance 70 Drain-Source Current, IDS (A) 80 Conditions: TJ = -55 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs VGS = 15 V 70 VGS = 13 V 60 Drain-Source Current, IDS (A) 80 VGS = 11 V 50 40 VGS = 9 V 30 20 10 VGS = 15 V VGS = 13 V VGS = 11 V 60 50 VGS = 9 V 40 30 20 VGS = 7 V 10 VGS = 7 V 0 0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 80 Conditions: TJ = 150 °C tp < 200 µs 2.0 VGS = 15 V VGS = 11 V 1.6 60 VGS = 9 V 50 40 30 VGS = 7 V 20 10 1.4 1.2 1.0 0.8 0.6 0.4 0.0 0.0 2.5 5.0 7.5 10.0 12.5 -50 15.0 -25 0 Figure 3. Output Characteristics TJ = 150 ºC Conditions: VGS = 15 V tp < 200 µs TJ = 150 °C 80 TJ = -55 °C 60 75 100 125 150 Conditions: IDS = 20 A tp < 200 µs 120 On Resistance, RDS On (mOhms) 100 50 Figure 4. Normalized On-Resistance vs. Temperature 140 120 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) On Resistance, RDS On (mOhms) 15.0 0.2 0 TJ = 25 °C 40 20 100 VGS = 11 V 80 VGS = 13 V 60 VGS = 15 V 40 20 0 0 0 10 20 30 40 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 12.5 Conditions: IDS = 20 A VGS = 20 V tp < 200 µs 1.8 VGS = 13 V 10.0 Figure 2. Output Characteristics TJ = 25 ºC On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 70 7.5 Drain-Source Voltage, VDS (V) C3M0065090D Rev. B, 03-2017 50 60 -50 -25 0 25 50 75 100 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance -10 Conditions: VDS = 20 V tp < 200 µs -8 -6 -4 -2 0 0 40 TJ = 150 °C VGS = -4 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 50 30 TJ = 25 °C 20 TJ = -55 °C 10 VGS = 0 V -20 VGS = -2 V -40 -60 Conditions: TJ = -55°C tp < 200 µs 0 0 2 4 6 8 10 Gate-Source Voltage, VGS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -10 -8 -6 -4 -80 Drain-Source Voltage VDS (V) Figure 8. Body Diode Characteristic at -55 ºC -2 0 -10 -8 -6 -4 -2 0 Drain-Source Current, IDS (A) VGS = -4 V -20 VGS = 0 V VGS = -2 V -40 0 Drain-Source Current, IDS (A) 0 VGS = -4 V -20 VGS = 0 V VGS = -2 V -40 -60 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -60 Conditions: TJ = 150°C tp < 200 µs -80 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC 3.0 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature 4 Conditions: IDS = 20 A IGS = 100 mA VDS = 400 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 16 Conditons VGS = VDS IDS = 5 mA 2.5 C3M0065090D Rev. B, 03-2017 -80 150 8 4 0 -4 0 5 10 15 20 25 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 30 35 Typical Performance -8 -7 -6 -5 -4 -3 -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 0 0 VGS = 0 V VGS = 5 V -20 VGS = 10 V -40 VGS = 15 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V -20 VGS = 10 V -40 VGS = 15 V -60 -60 Conditions: TJ = -55 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs -80 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -7 -8 -6 -5 -4 -3 -2 Figure 14. 3rd Quadrant Characteristic at 25 ºC 30 0 -1 -80 Drain-Source Voltage VDS (V) 0 25 -20 VGS = 5 V -40 VGS = 10 V VGS = 15 V Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) VGS = 0 V 20 15 10 5 -60 Conditions: TJ = 150 °C tp < 200 µs Drain-Source Voltage VDS (V) 0 0 -80 100 600 700 800 900 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 Capacitance (pF) Capacitance (pF) 500 10000 Ciss Coss 100 Crss 10 400 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 300 Drain to Source Voltage, VDS (V) Figure 15. 3rd Quadrant Characteristic at 150 ºC 10000 200 Ciss 100 Coss 10 Crss 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0065090D Rev. B, 03-2017 200 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 800 900 Typical Performance Drain-Source Continous Current, IDS (DC) (A) 40 140 Conditions: TJ ≤ 150 °C Maximum Dissipated Power, Ptot (W) 35 30 25 20 15 10 5 100 0 -55 -30 -5 20 45 70 95 120 Conditions: TJ ≤ 150 °C 120 80 60 40 20 0 145 -55 Case Temperature, TC (°C) -30 -5 20 45 70 95 120 145 Case Temperature, TC (°C) Figure 19. Continuous Drain Current Derating vs. Case Temperature Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Junction To Case Impedance, ZthJC (oC/W) 100.00 1 Drain-Source Current, IDS (A) 0.5 0.3 0.1 100E-3 0.05 0.02 1.00 0.10 0.01 10E-6 100E-6 1E-3 10E-3 100E-3 Time, tp (s) 1 800 Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065090D L = 77 μH 700 600 ETotal 600 EOn 400 EOff 200 10 100 1000 Figure 22. Safe Operating Area Switching Loss (uJ) Switching Loss (uJ) 1000 1 Drain-Source Voltage, VDS (V) 800 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065090D L = 77 μH Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 10 Figure 21. Transient Thermal Impedance (Junction - Case) 1200 1 ms 100 ms 0.01 1E-6 100 µs 10.00 SinglePulse 10E-3 500 ETotal 400 EOn 300 200 EOff 100 0 0 0 10 20 30 40 Drain to Source Current, IDS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 10 µs Limited by RDS On C3M0065090D Rev. B, 03-2017 50 0 10 20 30 40 Drain to Source Current, IDS (A) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 50 Typical Performance 400 Switching Loss (uJ) 400 Conditions: TJ = 25 °C VDD = 400 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0065090D L = 77 μH Conditions: IDS = 20 A DS VDD = 400 V DD RG(ext) = 2.5 Ω G(ext) VGS = -4V/+15 V GS FWD = C3M0065090D L = 77 μH 350 300 ETotal Switching Switching Loss Loss (uJ) (uJ) 500 300 EOn 200 100 250 ETotal Total 200 EOn On 150 100 EOff 50 0 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) Conditions: TJ = 25 °C VDD = 400 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0065090D L = 77 μH Switching Loss (uJ) 50 40 0 25 50 75 100 125 Junction Temperature, TJJ (°C) td(on) 30 td(off) 20 tr tf 10 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) Figure 28. Switching Times Definition Figure 27. Switching Times vs. RG(ext) 35 Conditons: VDD = 50 V Avalanche Current (A) 30 25 20 15 10 5 0 0 20 40 60 80 Time in Avalanche TAV (us) Figure 29. Single Avalanche SOA curve 7 C3M0065090D Rev. B, 03-2017 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 60 EOff Off 100 175 Test Circuit Schematic Q1 RG VDC C3M0065090D VGS= - 4V Q2 RG C3M0065090D D.U.T Figure 30. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0065090D Rev. B, 03-2017 Package Dimensions POS Package TO-247-3 A T V U W Pinout Information: • • • Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Recommended Solder Pad Layout TO-247-3 9 C3M0065090D Rev. B, 03-2017 Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0065090D Rev. B, 03-2017 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power