TSM2N100CP ROG

TSM2N100CP Taiwan Semiconductor N-Channel Power MOSFET 1000V, 1.85A, 8.5Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% avalanche tested ● ● Advanced planar process Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 ● PARAMETER VALUE UNIT VDS 1000 V RDS(on) (max) 8.5 Ω Qg 17 nC ● AC/DC LED Lighting ● Power Supply ● Power Meter en de d APPLICATIONS mm TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 PARAMETER Drain-Source Voltage TC = 25°C No tR Gate-Source Voltage eco ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Continuous Drain Current Pulsed Drain Current (Note 1) SYMBOL Limit UNIT VDS 1000 V VGS ±30 V ID TC = 100°C (Note 2) 1.85 1.16 A IDM 7.4 A PDTOT 77 W Single Pulse Avalanche Energy (Note 3) EAS 20 mJ Single Pulse Avalanche Current (Note 3) IAS 1.4 A TJ, TSTG - 55 to +150 °C SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 1.62 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 1 Version: A1606 TSM2N100CP Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static VGS = 0V, ID = 250µA BVDSS 1000 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 3.5 4.5 5.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V IDSS -- -- 1 µA RDS(on) -- 6 8.5 Ω Drain-Source On-State Resistance (Note 4) (Note 5) Total Gate Charge Qg VDS = 800V, ID = 1.85A, Gate-Source Charge Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance f = 1.0MHz Gate Resistance Switching Turn-On Delay Time Turn-On Rise Time Source-Drain Diode (Note 4) ID = 0.9A, VGS = 10V IS = 1.85A, VGS = 0V tR Forward Voltage VDD = 500V, RG = 25Ω, e co Turn-Off Fall Time Qgs -- 5 -- Qgd -- 9 -- nC Ciss -- 625 -- Coss -- 38 -- pF Ω Crss f = 1.0MHz, open drain (Note 6) Turn-Off Delay Time -- mm Reverse Transfer Capacitance 17 en VGS = 10V -- de Dynamic VGS = 10V, ID = 0.9A d Drain-Source Breakdown Voltage 15 Rg -- 2.2 -- td(on) -- 31 -- tr -- 14 -- td(off) -- 78 -- tf -- 44 -- VSD -- -- 1.4 V ns Reverse Recovery Time VR = 100V, IS = 1.85A trr -- 359 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 1.34 -- μC Notes: Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 20mH, IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C No 1. o 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM2N100CP ROG PACKAGE PACKING TO-252 (DPAK) 2,500pcs / 13” Reel 2 Version: A1606 TSM2N100CP Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) de ID, Continuous Drain Current (A) en VGS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge e co VGS, Gate to Source Voltage (V) mm On-Resistance vs. Drain Current tR RDS(on), Drain-Source On-Resistance (Ω) VDS, Drain to Source Voltage (V) d Transfer Characteristics ID, Continuous Drain Current (A) Output Characteristics Qg, Gate Charge (nC) ID, Continuous Drain Current (A) Source-Drain Diode Forward Current vs. Voltage IS, Body Diode Forward Current (A) RDS(on), Drain-Source On-Resistance (Normalized) No On-Resistance vs. Junction Temperature VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 3 Version: A1606 TSM2N100CP Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) de en BVDSS (Normalized) Drain-Source Breakdown Voltage (V) C, Capacitance (pF) VDS, Drain to Source Voltage (V) d BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage tR e co ID, Continuous Drain Current (A) mm Maximum Safe Operating Area TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Continuous Drain Current (A) Normalized Effective Transient Thermal Impedance No Normalized Thermal Transient Impedance, Junction-to-Case 101 SINGLE PULSE RӨJC=1.62˚C/W 100 10-1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-2 10-3 -5 10 10-4 10-3 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 10-2 10-1 Square Wave Pulse Duration (s) 4 Version: A1606 TSM2N100CP Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) No tR e co SUGGESTED PAD LAYOUT mm en de d TO-252 MARKING DIAGRAM Y = Year Code M = Month Code O =Jan P =Feb S =May T =Jun W =Sep X =Oct L = Lot Code (1~9, A~Z) Q =Mar U =Jul Y =Nov R =Apr V =Aug Z =Dec 5 Version: A1606 TSM2N100CP No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1606