TSM040N03CP ROG

TSM040N03CP ROG

  • 厂商:

    TAIWANSEMICONDUCTOR(台湾半导体)

  • 封装:

    TO-252(DPAK)

  • 描述:

    MOSFET N-CHANNEL 30V 90A TO252

  • 数据手册
  • 价格&库存
TSM040N03CP ROG 数据手册
TSM040N03CP 30V N-Channel Power MOSFET TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 30 V RDS(on) (max) VGS = 10V 4 VGS = 4.5V 6 Qg 24 nC Block Diagram Ordering Information Ordering code mΩ Package Packing TSM040N03CP ROG TO-252 2.5kpcs / 13” Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (TC=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 90 A 57 A IDM 360 A EAS 125 mJ IAS 50 A 88 W 0.59 W/ºC TJ 150 ºC TSTG -55 to +150 Symbol Limit TC=25ºC Continuous Drain Current Pulsed Drain Current ID TC=100ºC (Note 1) Single Pulse Avalanche Energy (Note 2) Single Pulse Avalanche Current (Note 2) o Total Power Dissipation @ TC=25 C PD o Derate above TC=25 C Operating Junction Temperature Storage Temperature Range o C Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA 1/5 1.7 62 Unit o C/W o C/W Version: B1807 TSM040N03CP 30V N-Channel Power MOSFET Electrical Specifications (TC=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 30 -- -- V -- 3.1 4 -- 4.5 6 1.2 1.6 2.5 -- -- 1 -- -- 10 IGSS -- -- ±100 nA gfs -- 15.5 -- S Qg -- 24 -- Qgs -- 4.2 -- Qgd -- 13 -- Ciss -- 2200 -- Coss -- 280 -- Crss -- 177 -- Rg -- 2 -- td(on) -- 12.6 -- tr -- 19.5 -- td(off) -- 42.8 -- tf -- 13.2 -- Continuous Drain-Source Diode IS -- -- 90 A Pulse Drain-Source Diode ISM -- -- 360 A VSD -- -- 1 V Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current VGS = 0V, ID = 250µA VGS = 10V, ID = 24A RDS(ON) VGS = 4.5V, ID = 12A VDS = VGS, ID = 250µA VGS(TH) VDS = 30V, VGS = 0V IDSS VDS = 24V, TJ = 125ºC Gate Body Leakage VGS = ±20V, VDS = 0V Forward Transconductance VDS = 10V, ID = 10A mΩ V µA Dynamic (Note 3,4) Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 3,4) (Note 3,4) VDS = 15V, ID = 24A, VGS = 4.5V Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance f = 1MHz Reverse Transfer Capacitance Gate Resistance f = 1MHz nC pF Ω Switching Turn-On Delay Time Turn-On Rise Time (Note 3,4) Turn-Off Delay Time Turn-Off Fall Time (Note 3,4) (Note 3,4) VDD=15V , VGS=10V , RG=3.3, ID=-15A (Note 3,4) ns Source-Drain Diode Ratings and Characteristic Diode-Source Forward Voltage VGS = 0V, IS = 1A Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. o 2. VDD=25V, VGS=10V, L=0.1mH, IAS=50A, RG=25, Starting TJ=25 C 3. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2% 4. Essentially independent of operating temperature. 2/5 Version: B1807 TSM040N03CP 30V N-Channel Power MOSFET Electrical Characteristics Curves Normalized RDSON vs. TJ Normalized On Resistance ID , Continuous Drain Current (A) Continuous Drain Current vs. Tc o TJ , Junction Temperature ( C) o TC , Case Temperature ( C) Gate Charge Waveform VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Normalized Vth vs. TJ o Qg , Gate Charge (nC) Normalized Transient Impedance Maximum Safe Operation Area ID , Drain Current (A) Normalized Thermal Response TJ , Junction Temperature ( C) Square Wave Pulse Duration (s) VDS , Drain to Source Voltage (V) 3/5 Version: B1807 TSM040N03CP 30V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters SUGGESTED PAD LAYOUT (Unit: Millimeters) Marking Diagram Y M 040N03 YML L = Year Code = Month Code O =Jan P =Feb S =May T =Jun W =Sep X =Oct = Lot Code (1~9, A~Z) Q =Mar U =Jul Y =Nov 4/5 R =Apr V =Aug Z =Dec Version: B1807 TSM040N03CP 30V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: B1807
TSM040N03CP ROG 价格&库存

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TSM040N03CP ROG
    •  国内价格 香港价格
    • 2500+3.540722500+0.44400
    • 5000+3.496465000+0.43845
    • 7500+3.452207500+0.43290
    • 10000+3.4359210000+0.43086
    • 12500+3.4079412500+0.42735

    库存:0

    TSM040N03CP ROG
    •  国内价格 香港价格
    • 2500+3.983912500+0.49958

    库存:7490

    TSM040N03CP ROG
    •  国内价格 香港价格
    • 1+15.778841+1.97864
    • 10+10.0342410+1.25828
    • 100+6.74230100+0.84548
    • 500+5.32937500+0.66830
    • 1000+4.876311000+0.61148

    库存:7490