C3M0025065D

C3M0025065D VDS 650 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 97 A 25 mΩ N-Channel Enhancement Mode Features • • • • • Package 3rd Generation SiC MOSFET technology High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • • • • • • Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) Applications • • • • • EV chargers UPS Solar inverters Industrial SMPS DC/DC converters Part Number Package Marking C3M0025065D TO-247-3 C3M0025065D Maximum Ratings Symbol VDSS Drain - Source Voltage, TC = 25 ˚C VGS Gate - Source voltage (Under transient events < 100 ns) ID ID(pulse) PD TJ , Tstg 1 Parameter Value Unit 650 V -8/+19 V Fig. 29 A Fig. 19 Continuous Drain Current, VGS = 15 V, TC = 25˚C 97 Continuous Drain Current, VGS = 15 V, TC = 100˚C 70 Pulsed Drain Current, Pulse width tP limited by Tjmax 251 A Power Dissipation, TC=25˚C, TJ = 175 ˚C 326 W -40 to +175 ˚C Operating Junction and Storage Temperature TL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚C Md Mounting Torque, (M3 or 6-32 screw) 1 8.8 Nm lbf-in C3M0025065D Rev 1, 12-2020 Note Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS Parameter Drain-Source Breakdown Voltage Min. Typ. Max. 650 Unit V VGSon Gate-Source Recommended Turn-On Voltage 15 V VGSoff Gate-Source Recommended Turn-Off Voltage -4 V VGS(th) Gate Threshold Voltage 1.8 2.3 3.6 1.9 Test Conditions VGS = 0 V, ID = 100 μA Static V VDS = VGS, ID = 9.22 mA V VDS = VGS, ID = 9.22 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 650 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 25 34 RDS(on) Drain-Source On-State Resistance 33 25 gfs Transconductance Ciss Input Capacitance 2980 Coss Output Capacitance 178 Crss Reverse Transfer Capacitance 12 Co(er) Effective Output Capacitance (Energy Related) 236 Co(tr) Effective Output Capacitance (Time Related) 340 Eoss Coss Stored Energy 37 EON Turn-On Switching Energy (Body Diode) 578 EOFF Turn Off Switching Energy (Body Diode) 214 EON Turn-On Switching Energy (External Diode) 392 24 EOFF Turn Off Switching Energy (External Diode) 238 td(on) Turn-On Delay Time 14 Rise Time 60 Turn-Off Delay Time 27 Fall Time 12 Internal Gate Resistance 1.3 Qgs Gate to Source Charge 29 Qgd Gate to Drain Charge 37 Qg Total Gate Charge 108 tr td(off) tf RG(int) mΩ S VGS = 15 V, ID = 33.5 A VGS = 15 V, ID = 33.5 A, TJ = 175ºC VDS= 20 V, IDS= 33.5 A VDS= 20 V, IDS= 33.5 A, TJ = 175ºC VGS = 0 V, VDS = 0V to 600 V F = 1 Mhz pF C3M0025065D Rev 1, 12-2020 Fig. 29 Fig. 11 Fig. 4, 5,6 Fig. 7 Fig. 17, 18 VAC = 25 mV VGS = 0 V, VDS = 0V to 400 V Note: 1 Note: 1 μJ VDS = 600 V, F = 1 Mhz Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 33.5 A, RG(ext) = 2.5 Ω, L= 59 μH, TJ = 175ºC Fig. 25 FWD = Internal Body Diode of MOSFET μJ VDS = 400 V, VGS = -4 V/15 V, ID = 33.5 A, RG(ext) = 2.5 Ω, L= 59 μH, TJ = 175ºC Fig. 25 FWD = External SiC DIODE ns VDD = 400 V, VGS = -4 V/15 V ID = 33.5 A, RG(ext) = 2.5 Ω Timing relative to VDS Inductive load Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 33.5 A Per IEC60747-8-4 pg 21 Note (1): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V 2 Note Fig. 26 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 5.0 V VGS = -4 V, ISD = 16.8 A, TJ = 25 °C 4.5 V VGS = -4 V, ISD = 16.8 A, TJ = 175 °C Continuous Diode Forward Current 52 A VGS = -4 V, TC = 25˚C Diode pulse Current 251 A VGS = -4 V, pulse width tP limited by Tjmax trr Reverse Recover time 33 ns Qrr Reverse Recovery Charge 309 nC Irrm Peak Reverse Recovery Current 17 A trr Reverse Recover time 51 ns Qrr Reverse Recovery Charge 261 nC Irrm Peak Reverse Recovery Current 12 A Note Fig. 8, 9, 10 VGS = -4 V, ISD = 33.5 A, VR = 400 V dif/dt = 745 A/µs, TJ = 175 °C VGS = -4 V, ISD = 33.5 A, VR = 400 V dif/dt = 685 A/µs, TJ = 175 °C Thermal Characteristics Symbol 3 Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.46 RθJA Thermal Resistance From Junction to Ambient C3M0025065D Rev 1, 12-2020 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance Conditions: Tj = -40 °C tp = < 200 µs Drain-Source Current, IDS (A) 120 VGS = 15V 140 VGS = 11V VGS = 13V 100 80 60 VGS = 9V 40 20 0 2.0 4.0 6.0 8.0 10.0 100 VGS = 9V 80 60 40 VGS = 7V 0 12.0 0.0 2.0 4.0 Figure 1. Output Characteristics TJ = -40 ºC Drain-Source Current, IDS (A) 120 2.0 VGS = 15V VGS = 11V VGS = 13V 1.6 80 60 VGS = 7V 40 20 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -50 -25 0 50 Tj = 175 °C 35 Tj = -40 °C 30 25 Tj = 25 °C 20 15 10 5 0 20 75 100 125 40 60 80 100 Drain-Source Current, IDS (A) 120 Figure 5. On-Resistance vs. Drain Current For Various Temperatures C3M0025065D Rev 1, 12-2020 150 175 Conditions: IDS = 33.5 A tp < 200 µs 60 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 40 50 70 Conditions: VGS = 15 V tp < 200 µs 45 25 Junction Temperature, Tj (°C) Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 175 ºC 4 12.0 1.4 Drain-Source Voltage, VDS (V) 0 10.0 Conditions: IDS = 33.5 A VGS = 15 V tp < 200 µs 1.8 VGS = 9V 100 0 8.0 Figure 2. Output Characteristics TJ = 25 ºC On Resistance, RDS On (P.U.) Conditions: Tj = 175 °C tp = < 200 µs 6.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) 140 VGS = 11V VGS = 13V 20 VGS = 7V 0.0 VGS = 15V Conditions: Tj = 25 °C tp = < 200 µs 120 Drain-Source Current, IDS (A) 140 140 160 50 VGS = 11 V 40 VGS = 13 V 30 VGS = 15 V 20 10 0 -50 -25 0 25 50 75 100 Junction Temperature, Tj (°C) 125 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 175 Typical Performance 140 -8 -6 -4 -2 0 VGS = -4 V 100 TJ = 175 °C TJ = -40 °C 80 TJ = 25 °C 60 40 VGS = 0 V -40 -60 VGS = -2 V -80 -100 20 0 0 2 4 6 8 10 12 14 -4 Figure 8. Body Diode Characteristic at -40 ºC -2 0 VGS = -4 V 0 Drain-Source Current, IDS (A) -20 VGS = 0 V -40 VGS = -2 V -60 -80 -100 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -10 -8 Drain-Source Current, IDS (A) -6 4.0 -4 -2 0 0 -20 VGS = 0 V -40 -60 VGS = -2 V -80 -100 -120 Conditions: Tj = 175°C tp < 200 µs -140 Drain-Source Voltage VDS (V) -120 -140 Figure 10. Body Diode Characteristic at 175 ºC 16 Conditons VGS = VDS IDS = 9.22mA 3.5 -6 VGS = -4 V Figure 9. Body Diode Characteristic at 25 ºC 2.5 2.0 1.5 1.0 Conditions: IDS = 33.5 A IGS = 50 mA VDS = 400 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) 3.0 Threshold Voltage, Vth (V) -140 Drain-Source Voltage VDS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -120 Conditions: Tj = -40°C tp < 200 µs Gate-Source Voltage, VGS (V) -10 0 -20 Drain-Source Current, IDS (A) 120 Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 µs 8 4 0 0.5 0.0 -50 -25 0 25 50 75 100 Junction Temperature TJ (°C) 125 Figure 11. Threshold Voltage vs. Temperature 5 C3M0025065D Rev 1, 12-2020 150 175 -4 0 20 40 60 80 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 100 120 Typical Performance -8 -6 -2 -4 0 Drain-Source Current, IDS (A) VGS = 0 V 0 -20 VGS = 5 V -40 -60 VGS = 10 V -80 VGS = 15 V -100 Conditions: Tj = -40 °C tp < 200 µs -10 -8 VGS = 0 V -4 -2 -60 -80 VGS = 15 V Drain-Source Voltage VDS (V) Drain-Source Current, IDS (A) -60 -80 VGS = 15 V Drain-Source Voltage VDS (V) 40 35 30 25 20 15 10 5 -120 0 -140 0 100 Figure 15. 3rd Quadrant Characteristic at 175 ºC 10000 500 600 700 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) Capacitance (pF) 400 1000 Coss 100 Crss 10 Coss 100 Crss 10 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 6 300 Drain to Source Voltage, VDS (V) 10000 1000 1 200 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss -140 45 -100 Conditions: Tj = 175 °C tp < 200 µs -120 50 0 -40 VGS = 10 V -100 Figure 14. 3rd Quadrant Characteristic at 25 ºC -20 VGS = 5 V -20 VGS = 10 V -140 0 VGS = 0 V 0 VGS = 5 V Conditions: Tj = 25 °C tp < 200 µs Stored Energy, EOSS (µJ) -6 0 -40 Figure 13. 3rd Quadrant Characteristic at -40 ºC -8 -2 -4 -120 Drain-Source Voltage VDS (V) -10 -6 Drain-Source Current, IDS (A) -10 C3M0025065D Rev 1, 12-2020 200 1 0 100 200 300 400 500 Drain-Source Voltage, VDS (V) 600 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 650V) 700 Typical Performance 350 Conditions: TJ ≤ 175 °C 90 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 100 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 Case Temperature, TC (°C) 150 Conditions: TJ ≤ 175 °C 300 250 200 150 100 50 0 175 -50 Figure 19. Continuous Drain Current Derating vs. Case Temperature 0.5 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 25 50 75 100 125 Case Temperature, TC (°C) 150 175 1000.00 0.3 100E-3 0.1 0.05 0.02 10E-3 0.01 SinglePulse 100.00 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 ms 100 ms 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) Figure 22. Safe Operating Area Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0025065D L = 59 μH 2 10 µs 1.00 1 ETotal Conditions: TJ = 25 °C VDD = 400 V IDS = 33.5 A VGS = -4/+15 V FWD = C3M0025065D L = 59 μH 1.4 1.2 EOn 1.5 Switching Loss (mJ) 2.5 1 µs 100 µs 0.01 1E-6 Limited by RDS On 10.00 Figure 21. Transient Thermal Impedance (Junction - Case) Switching Loss (mJ) 0 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 1E-3 -25 1 EOff 1 ETotal EOn 0.8 0.6 EOff 0.4 0.5 0.2 0 0 10 20 30 40 50 Drain to Source Current, IDS (A) 60 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 7 C3M0025065D Rev 1, 12-2020 70 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 Figure 24. Clamped Inductive Switching Energy vs. RG(ext) 25 Typical Performance 1 Switching Loss (mJ) 120 Conditions: IDS = 33.5 A VDD = 400 V RG(ext) = 2.5 Ω VGS = -4/+15 V L = 59 μH FWD = C3M0025065D FWD = C3D16065A 0.8 ETotal ETotal with Schottky 0.6 EOn EOn with Schottky 0.4 80 tr td(off) 60 40 tf td(on) EOff with Schottky EOff 0.2 0 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 175 Figure 25. Clamped Inductive Switching Energy vs. Temperature 8 Conditions: TJ = 25 °C VDD = 400 V IDS = 33.5 A VGS = -4/+15 V FWD = C3M0025065D 100 Switching Times (ns) 1.2 C3M0025065D Rev 1, 12-2020 20 200 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 26. Switching Times vs. RG(ext) 20 25 Test Circuit Schematic D1 L=156 uH LL= 57.6 µH µH L==135 59 uH VDC C4D10120A C4D20120A C3D16065A 10A,1200V 1200V 20A, 16A, 650V SiC Schottky Schottky SiC CDC=42.3 uF Q2 RG D.U.T D.U.T C3M0060065K C3M0015065K C3M0025065D C3M0015065D C2M0080120D Figure 27. Clamped Inductive Switching Waveform Test Circuit Q1 RG LL==57.6 µH 59 uH L= 135uH µH L=156 VDC CDC=42.3 uF D.U.T C3M0060065K C3M0015065K C3M0025065D D.U.T C3M0015065D C2M0080120D VGS = �-�V 5V RG Q2 C3M0015065K C3M0015065D C3M0025065D C3M0060065K C2M0080120D Figure 28. Body Diode Recovery Test Circuit 19 V 15 V VGSon VGS 0V VGSoff -4 V t < 100ns -8 V 3 CREE CONFIDENTIAL & PROPRIETARY © 2018 Cree, Inc. All rights reserved. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Figure 29. VGS Waveform Example 9 C3M0025065D Rev 1, 12-2020 Package Dimensions POS Package TO-247-3 A T V U W Pinout Information: • • • Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Recommended Solder Pad Layout TO-247-3 10 C3M0025065D Rev 1, 12-2020 Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 11 C3M0025065D Rev 1, 12-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power