TSM4ND65CI

TSM4ND65CI Taiwan Semiconductor N-Channel Power MOSFET 650V, 4A, 2.6Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% UIS and Rg tested PARAMETER VALUE UNIT VDS 650 V RDS(on) (max) 2.6 Ω Qg 16.8 nC ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Power Supply ● AC/DC LED Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V 4 A 2.5 A IDM 16 A Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C PDTOT 41.6 W Single Pulse Avalanche Energy (Note 3) EAS 144 mJ Single Pulse Avalanche Current (Note 3) IAS 3.8 A TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 3 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. 1 Version: A1804 TSM4ND65CI Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 650 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 2.9 3.8 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 1.2A RDS(on) -- 1.85 2.6 Ω Qg -- 16.8 -- Qgs -- 2.7 -- Qgd -- 7.6 -- Ciss -- 596 -- Coss -- 38 -- Crss -- 1 -- Rg -- 2 4 td(on) -- 6 -- Dynamic (Note 5) Total Gate Charge VDS = 520V, ID = 2.4A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 50V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching nC pF Ω (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 325V, RG = 5Ω, tr -- 19 -- Turn-Off Delay Time ID = 2.4A, VGS = 10V td(off) -- 17 -- tf -- 25 -- Body-Diode Continuous Forward Current IS -- -- 4 A Body-Diode Pulsed Current ISM -- -- 16 A VSD -- -- 1.2 V Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage IS = 2.4A, VGS = 0V Reverse Recovery Time IS = 2.4A trr -- 195 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 1.2 -- μC Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 20mH, IAS = 3.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION PART NO. PACKAGE PACKING TSM4ND65CI C0G ITO-220 50pcs / Tube 2 Version: A1804 TSM4ND65CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 4 VGS=10V VGS=7V VGS=5V 3 ID, Drain Current (A) ID, Drain Current (A) 4 2 VGS=4V 1 3 2 25℃ 1 -55℃ 150℃ 0 0 0 2 4 6 8 0 10 2 On-Resistance vs. Drain Current 6 8 Gate-Source Voltage vs. Gate Charge 3 10 2.5 2 VGS=10V 1.5 1 0.5 VDS=520V ID=2.4A 8 6 4 2 0 0 0 1 2 3 0 4 5 3 VGS=10V ID=1.2A 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 15 20 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 2.5 10 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 4 VGS, Gate to Source Voltage (V) VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) VDS, Drain to Source Voltage (V) 100 125 150 TJ, Junction Temperature (°C) 3 6 5 4 3 2 ID=1.2A 1 0 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) Version: A1804 TSM4ND65CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 1200 1000 800 CISS 600 400 200 COSS CRSS 1.2 ID=250uA 1.1 1 0.9 0.8 0 0.1 1 10 100 -75 1000 VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 10 IS, Reverse Drain Current (A) ID, Drain Current (A) -50 RDS(ON) 10 1 0.1 SINGLE PULSE RӨJC=3°C/W TC=25°C 1 150℃ -55℃ 25℃ 0.1 0.01 1 10 100 0 1000 0.2 0.4 0.6 0.8 1 1.2 Normalized Effective Transient Thermal Impedance, ZӨJC VDS, Drain to Source Voltage (V) VSD, Body Diode Forward Voltage Continuous Drain Current (A) (V)Continuous Drain Current (A) Normalized Thermal Transient Impedance, Junction-to-Case 10 SINGLE PULSE RӨJC=3°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 0.1 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 1 10 t, Square Wave Pulse Duration (sec) 4 Version: A1804 TSM4ND65CI Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM TSC 4ND65 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1804 TSM4ND65CI Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1804