TSM160N10LCR RLG

TSM160N10LCR Taiwan Semiconductor N-Channel Power MOSFET 100V, 46A, 16mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 100 V RDS(on) (max) VGS = 10V 16 VGS = 4.5V 20 mΩ Qg 36 nC APPLICATIONS ● BLDC Motor Control ● Telecom power ● Primary and Secondary Side Switch PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C (Note 1) ID TA = 25°C Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 46 8 A IDM 184 A IAS EAS 26 101 A mJ PD PD 83 17 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.5 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1610 TSM160N10LCR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 100 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.9 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 14 16 -- 16 20 gfs -- 38 -- Qg -- 73 -- Qg -- 36 -- Qgs -- 17 -- Qgd -- 15 -- Ciss -- 4431 -- Coss -- 158 -- Crss -- 45 -- Rg 0.5 1.5 3 td(on) -- 6.2 -- tr -- 19 -- td(off) -- 35 -- tf -- 21 -- VSD -- -- 1.2 V VGS = 0V, VDS = 100V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 100V TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 8A (Note 3) VGS = 4.5V, ID = 7A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 5V, ID = 8A µA mΩ S (Note 4) VGS = 10V, VDS = 50V, Total Gate Charge ID = 8A Total Gate Charge VGS = 4.5V, VDS = 50V, Gate-Source Charge ID = 7A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 50V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 50V, Turn-Off Delay Time ID = 8A, RG = 2Ω, Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 8A Reverse Recovery Time IS = 8A , trr -- 31.5 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 40 -- nC Notes: 1. 2. 3. 4. Silicon limited current only. L = 0.3mH, VGS = 10V, VDD = 50V, RG = 25Ω, IAS = 26A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM160N10LCR RLG PACKAGE PACKING PDFN56 2500pcs / 13” Reel 2 Version: A1610 TSM160N10LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 30 VGS=10V VGS=7V VGS=5V VGS=4.5V 24 ID, Drain Current (A) ID, Drain Current (A) 30 VGS=4V 18 12 6 24 18 -55℃ 12 25℃ 6 VGS=3.5V 150℃ 0 0 0 1 2 3 4 0 5 1 On-Resistance vs. Drain Current 3 4 5 Gate-Source Voltage vs. Gate Charge 10 0.03 0.025 0.02 VGS=4.5V 0.015 VGS=10V 0.01 0.005 VDS=50V ID=8A 8 6 4 2 0 0 0 6 12 18 24 0 30 20 ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=8A 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 60 80 On-Resistance vs. Gate-Source Voltage 3 2.5 40 Qg, Gate Charge (nC) On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Normalized) 2 VGS, Gate to Source Voltage (V) VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) VDS, Drain to Source Voltage (V) 100 125 150 TJ, Junction Temperature (°C) 0.05 0.04 0.03 0.02 0.01 ID=8A 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) 3 Version: A1610 TSM160N10LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage 1.2 BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 6000 5000 CISS 4000 3000 2000 CRSS 1000 COSS ID=1mA 1.1 1 0.9 0.8 0 0 20 40 60 80 -75 100 Maximum Safe Operating Area, Junction-to-Case -25 0 25 50 75 100 125 150 Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 RDS(ON) ID, Drain Current (A) -50 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) 100 10 SINGLE PULSE RӨJC=1.5°C/W TC=25°C 1 10 150℃ 1 25℃ -55℃ 0.1 0.1 0.1 1 10 0 100 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=1.5°C/W 1 0.1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.01 0.001 0.00001 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 4 Version: A1610 TSM160N10LCR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 160N10L GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1610 TSM160N10LCR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1610