BUZ73A

BUZ 73A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 73 A 200 V 5.5 A 0.6 Ω PG-TO-220-3 yes S Maximum Ratings Parameter Symbol Continuous drain current ID TC = 37 ˚C Pulsed drain current Values Unit A 5.5 IDpuls TC = 25 ˚C 22 Avalanche current,limited by Tjmax IAR 7 Avalanche energy,periodic limited by Tjmax E AR 6.5 Avalanche energy, single pulse E AS mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C 120 Gate source voltage VGS Power dissipation Ptot TC = 25 ˚C ± 20 W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 ˚C K/W E 55 / 150 / 56 IEC climatic category, DIN IEC 68-1 Rev. 2.3 V Page 1 2009-04-06 BUZ 73A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 200 - - V GS(th) V GS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 200 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current IGSS V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) V GS = 10 V, ID = 4.5 A Rev. 2.3 nA - Page 2 0.5 0.6 2009-04-06 BUZ 73A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 4.5 A Input capacitance 3 pF - 400 530 - 85 130 - 45 70 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 4.2 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S td(on) ns V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 10 15 - 40 60 - 55 75 - 30 40 tr V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rev. 2.3 Page 3 2009-04-06 BUZ 73A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 ˚C Inverse diode direct current,pulsed - - 22 V 1.3 1.7 trr ns - 200 - Qrr V R = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.3 5.5 - V R = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD VGS = 0 V, IF = 14 A Reverse recovery time ISM TC = 25 ˚C Inverse diode forward voltage A µC - Page 4 0.6 - 2009-04-06 BUZ 73A Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 6.0 45 A W 5.0 Ptot ID 35 4.5 4.0 30 3.5 25 3.0 20 2.5 15 2.0 1.5 10 1.0 5 0.5 0 0 0.0 20 40 60 80 100 120 ˚C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C ˚C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 1 K/W A t = 36.0µs p ID 10 0 /I D 100 µs R DS (o n) =V DS 10 1 ZthJC 10 -1 1 ms D = 0.50 0.20 10 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 -3 -7 10 V VDS Rev. 2.3 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 0 tp Page 5 2009-04-06 BUZ 73A Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 13 Ptot = 40W Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.8 l A kj i h g ID VGS [V] 10 e a 4.0 b 4.5 c 5.0 d 5.5 8 e 6.0 7 d f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 9 6 5 c 4 l 1.2 1.0 0.8 e f g h i j 0.6 20.0 k 0.4 b 2 0 0 VGS [V] = 0.2 a 1 d RDS (on) 1.4 k 10.0 3 c Ω f 11 b a a 4.5 4.0 b 5.0 c 5.5 d 6.0 f e 6.5 7.0 g 7.5 h i k j 8.0 9.0 10.0 20.0 0.0 2 4 6 8 10 12 V 16 0 2 4 6 8 A VDS Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max 13 6.0 A S 11 ID 11 ID 5.0 gfs 10 9 4.5 4.0 8 3.5 7 3.0 6 2.5 5 2.0 4 3 1.5 2 1.0 1 0.5 0 0.0 0 1 2 3 4 5 6 7 8 V 10 0 VGS Rev. 2.3 2 4 6 8 A 12 ID Page 6 2009-04-06 BUZ 73A Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 4.5 A, VGS = 10 V 4.6 1.9 Ω V 98% 4.0 1.6 VGS(th) RDS (on) 3.6 1.4 typ 3.2 1.2 2.8 1.0 2.4 98% 0.8 2% 2.0 typ 1.6 0.6 1.2 0.4 0.8 0.2 0.4 0.0 -60 -20 20 60 100 ˚C 0.0 -60 160 -20 20 60 100 Typ. capacitances ˚C 160 Tj Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Tj = 25 ˚C typ Coss Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V 40 10 -1 0.0 Rev. 2.3 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Page 7 2009-04-06 BUZ 73A Avalanche energy EAS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 130 16 mJ V 110 EAS VGS 100 12 90 10 80 0,8 VDS max 0,2 VDS max 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 ˚C 160 Tj 0 4 8 12 16 20 24 28 32 nC 38 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.3 Page 8 2009-04-06 BUZ 73A PG-TO220-3 Rev. 2.3 Page 9 2009-04-06 BUZ 73A Rev. 2.3 Page 10 2009-04-06