E3D30065D

E3D30065D 900 V ID @ 25˚C 11.5 A Silicon Carbide Schottky Diode E-Series Automotive VDS RDS(on) 280 mΩ Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-247-3 Benefits • • • • Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • • • Automotive and Traction Power Conversion Battery Charging Systems Boost Diode in PFC or DC/DC Stages Free Wheeling Diodes in Inverter Stages AC/DC Converters PV Inverters Part Number Package Marking E3D30065D TO-247-3 E3D30065D Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Repetitive Peak Reverse Voltage 650 V VR DC Peak Reverse Voltage 650 V IF Continuous Forward Current 42*/84** 20*/40** 15*/30** A TC=25˚C TC=135˚C TC=150˚C Fig. 3 Fig. 4 VRRM Parameter Ptot Power Dissipation 179* 77* W TC=25˚C TC=110˚C IFRM Repetitive Peak Forward Surge Current 57* 33* A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse dV/dt Diode dV/dt ruggedness 200 V/ns TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C 1 8.8 Nm lbf-in TO-247 Mounting Torque * 1 Test Conditions Per Leg, ** Per Device E3D30065D Rev 1, 10-2020 VR=0-650V M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5* 2.0* 1.8* 2.4* V IF = 16 A TJ=25°C IF = 16 A TJ=175°C Fig. 1 IR Reverse Current 18* 38* 95* 378* μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 QC Total Capacitive Charge 43* nC VR = 400 V, IF = 16A TJ = 25°C Fig. 5 C Total Capacitance 744* 76* 70* pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 7.3* μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter RθJC * Thermal Resistance from Junction to Case Per Leg, ** Typ. Unit Note 0.84* 0.42** °C/W Fig. 8 Per Device Typical Performance (Per Leg) 400 45 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 300 250 TJ = 175 °C 200 TJ = 125 °C R F Foward Current, I (A) IF (A) 35 350 TJ = -55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C Reverse LeakageICurrent, (μA) IRR (uA) 40 E3D30065D Rev 1, 10-2020 TJ = 75 °C 150 TJ = 25 °C 100 TJ = -55 °C 50 0 0 200 400 600 800 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics 1000 1200 Typical Performance (Per Leg) 200 140 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 120 100 180 160 140 120 (W) PTOTP(W) Tot IF(peak) (A) IF (A) 80 100 60 60 40 40 20 0 80 20 25 50 75 100 TTCC(°C) ˚C 125 150 0 175 25 TC ˚C 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 800 Capacitance C (pF) (pF) 700 40 c Capacitive Charge, Q (nC) QC (nC) 150 900 30 20 600 500 400 300 200 10 100 0 100 200 300 400 500 ReverseVVoltage, (V) VR (V) R 600 Figure 5. Recovery Charge vs. Reverse Voltage 3 ˚C TTC (°C) 125 Figure 4. Power Derating 50 0 100 1000 Conditions: TJ = 25 °C 60 75 C Figure 3. Current Derating 70 50 E3D30065D Rev 1, 10-2020 700 0 0 1 10 ReverseVVoltage, (V) VR (V) R 100 Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance (Per Leg) 16 Capacitance StoredECEnergy, EC (mJ) (mJ) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Reverse Voltage, VR (V) VR (V) 600 700 Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) Figure 7. Typical Capacitance Stored Energy 1 0.5 0.3 100E-3 0.1 0.05 0.02 0.01 SinglePulse 10E-3 1E-3 1E-6 10E-6 100E-6 1E-3 Time,Tt(Sec) p (s) 10E-3 Figure 8. Transient Thermal Impedance 4 E3D30065D Rev 1, 10-2020 100E-3 1 Package Dimensions ASE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 e POS A Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC L .780 .800 L1 .161 .173 N ØP NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 1 OF 3 Recommended Solder Pad Layout 19.81 20.32 4.10 4.40 3.51 3.65 3 .138 .144 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5° REF W 3.5° REF X 4° REF Part Number Package Marking E3D30065D TO-247-3 E3D30065D all units are in inches TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 E3D30065D Rev 1, 10-2020 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • • Wolfspeed E-Series Family: http//wolfspeed.com/E-Series Wolfspeed SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 E3D30065D Rev 1, 10-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power