MUR860
Ultrafast power diode
Rev.01 - 15 July 2019
Product data sheet
1. General description
Ultrafast power diode in a SMC package.
2. Features and benefits
•
•
•
•
•
•
•
Fast switching
SMC package
High voltage capability
Low forward voltage drop
Low leakage current
Low thermal resistance
Soft recovery characteristic
3. Applications
•
•
•
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
use in switching power supplies, inverters and as free wheeling diodes
High frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Values
Unit
Absolute maximum rating
VRRM
repetitive peak reverse
voltage
600
V
IF(AV)
average forward current δ = 0.5; square-wave pulse; Tlead ≤ 95 °C;
Fig. 1; Fig. 2; Fig. 3
8
A
IFRM
repetitive peak forward
current
δ = 0.5 ; tp = 25 μs; Tlead ≤ 95 °C;
square-wave pulse
16
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
Fig. 4
180
A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse
200
A
MUR860
WeEn Semiconductors
Ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
K
cathode
2
A
anode
Simplified outline
Graphic symbol
K
1
A
001aaa020
2
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Packing
Name
method
MUR860
SMC
MUR860J
Reel
Small packing
quantity
3000
Package
version
SMCS
Package
issue date
16-Aug-2017
7. Marking
Table 4. Marking codes
Type number
Marking codes
MUR860
860
MUR860
Product data sheet
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Ultrafast power diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Values
Unit
repetitive peak reverse
voltage
600
V
VRWM
crest working reverse
voltage
600
V
VR
reverse voltage
600
V
IF(AV)
average forward current δ = 0.5; square-wave pulse; Tlead ≤ 95 °C;
Fig. 1; Fig. 2; Fig. 3
8
A
IFRM
repetitive peak forward
current
δ = 0.5 ; tp = 25 μs; Tlead ≤ 95 °C;
square-wave pulse
16
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
Fig. 4
180
A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse
200
A
DC
Tstg
storage temperature
-65 to 175
°C
Tj
junction temperature
175
°C
IF(AV) = IF(RMS) × √δ
Vo = 0.918 V; Rs = 0.0168 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
MUR860
Product data sheet
a = form factor = IF(RMS) / IF(AV)
Vo = 0.918 V; Rs = 0.0168 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal
waveform; maximum values
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MUR860
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Ultrafast power diode
IF
IFSM
t
tp
Tj(init)= 25 °Cmax
Fig. 3. Forward current as a function of lead
temperature; maximum values
MUR860
Product data sheet
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
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Ultrafast power diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-lead)
thermal resistance
from junction to lead
Fig. 5
-
-
10
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
in free air
-
75
-
K/W
P
δ=
tp
tp
T
t
T
Fig. 5. Transient thermal impedance from junction to lead as a function of pulse duration
MUR860
Product data sheet
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10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 8 A; Tj = 25 °C; Fig. 6
-
-
1.25
V
IF = 8 A; Tj = 150 °C; Fig. 6
-
-
1.05
V
VR = 600 V; Tj = 25 °C
-
-
10
μA
VR = 600 V; Tj = 150 °C
-
-
400
μA
IF = 8 A; VR = 400 V; dIF/dt = 200 A/us;
Tj = 25 °C; Fig. 7
-
494
-
nC
IF = 8 A; VR = 400 V; dIF/dt = 200 A/us;
Tj = 125 °C; Fig. 7
-
983
-
nC
IF = 1 A; VR = 30 V; dIF/dt= 50 A/us;
Tj = 25 °C; Fig. 7
-
66
90
ns
IF = 8 A; VR = 400 V; dIF/dt = 200 A/us;
Tj = 25 °C; Fig. 7
-
93
-
ns
IF = 8 A; VR = 400 V; dIF/dt = 200 A/us;
Tj = 125 °C; Fig. 7
-
130
-
ns
IF = 8 A; VR = 400 V; dIF/dt = 200 A/us;
Tj = 25 °C; Fig. 7
-
11
-
A
IF = 8 A; VR = 400 V; dIF/dt = 200 A/us;
Tj = 125 °C; Fig. 7
-
15
-
A
Static characteristics
VF
IR
forward voltage
reverse current
Dynamic characteristics
Qr
trr
IRM
reverse charge
reverse recovery time
peak reverse recovery
current
IF
dlF
dt
trr
time
25 %
100 %
Qr
IR
IRM
003aac562
Vo = 0.918 V; Rs = 0.0168 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 6. Forward current as a function of forward
voltage
MUR860
Product data sheet
Fig. 7. Reverse recovery definitions; ramp recovery
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11. Package outline
MUR860
Product data sheet
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1 ]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
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multiple devices. The latest product status information is available on
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Product data sheet.
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accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
MUR860
Product data sheet
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Trademarks
Notice: All referenced brands, product names, service names and
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MUR860
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MUR860
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Ultrafast power diode
13. Contents
1. General description........................................................1
2. Features and benefits....................................................1
3. Applications....................................................................1
4. Quick reference data......................................................1
5. Pinning information........................................................2
6. Ordering information......................................................2
7. Marking............................................................................2
8. Limiting values...............................................................3
9. Thermal characteristics.................................................5
10. Characteristics.............................................................6
11. Package outline............................................................7
12. Legal information.........................................................8
13. Contents......................................................................10
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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Date of release: 15 July 2019
MUR860
Product data sheet
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