ES3DBHM4G

ES3AB – ES3JB Taiwan Semiconductor 3A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile package Super fast recovery time for high efficiency Moisture sensitivity level: level 1,per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 3 A VRRM 50 - 600 V IFSM 100 A TJ MAX 150 °C Package DO-214AA (SMB) Configuration Single die Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.110g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device ES ES ES ES ES ES ES ES 3AB 3BB 3CB 3DB 3FB 3GB 3HB 3JB ES ES ES ES ES ES ES ES 3AB 3BB 3CB 3DB 3FB 3GB 3HB 3JB UNIT Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 3 A IFSM 100 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: C2102 ES3AB – ES3JB Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 24 °C/W Junction-to-ambient thermal resistance RӨJA 84 °C/W Junction-to-case thermal resistance RӨJC 26 Thermal Performance Note: Units mounted on PCB (10mm x 10mm Cu pad test board) °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB (1) Reverse current @ rated VR Reverse recovery time IF = 3.0A, TJ = 25°C IF = 1.5A, TJ = 125°C IF = 3.0A,TJ = 125°C TJ = 25°C (2) Junction capacitance IF = 1.5A, TJ = 25°C 1MHz, VR = 4.0V IF = 0.5A , IR = 1.0A Irr = 0.25A TYP MAX UNIT 0.80 0.92 V 0.90 1.04 V 1.11 1.30 V 0.86 1.00 V 0.98 1.13 V 1.24 1.45 V 0.66 0.75 V 0.73 0.85 V 0.85 0.98 V 0.73 0.84 V 0.83 0.95 V 0.99 1.13 V - 10 µA - 100 µA 46 - pF 41 - pF 34 - pF - 35 ns VF VF VF VF IR TJ = 125°C ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB SYMBOL CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: C2102 ES3AB – ES3JB Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ES3xB DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 50V(ES3AB) to 600V(ES3JB) 3 Version: C2102 ES3AB – ES3JB Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 ES3AB - ES3DB 3 CAPACITANCE (pF) 2 1 100 10 f=1.0MHz Vsig=50mVp-p 0 1 25 50 75 100 125 150 1 10 LEAD TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics ES3AB - ES3DB TJ=125°C 1 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 100 80 90 100 10 ES3AB - ES3DB 10 TJ=125°C 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=25°C TJ=125°C TJ=25°C 10.01 Pulse width 0.001 0.3 0.1 0.4 100 UF1DLW 1 (A) AVERAGE FORWARD CURRENT (A) 4 0.4 0.6 0.5 0.6 0.8 0.7 Pulse width 300μs 1% duty 0.8 0.9 cycle1 1.1 1.0 1.2 1.4 FORWARD VOLTAGE (V) 4 Version: C2102 1.2 ES3AB – ES3JB Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Junction Capacitance Fig.6 Typical Reverse Characteristics INSTANTANEOUS REVERSE CURRENT (μA) 1000 CAPACITANCE (pF) ES3FB - ES3GB 100 10 f=1.0MHz Vsig=50mVp-p 1 1 10 10 ES3FB - ES3GB TJ=125°C 1 0.1 0.01 TJ=25°C 0.001 10 100 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) REVERSE VOLTAGE (V) Fig.7 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) (A) 100 ES3FB - ES3GB 10 TJ=125°C TJ=25°C 1 Pulse width 300μs 1% duty cycle 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE (V) 5 Version: C2102 ES3AB – ES3JB Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Junction Capacitance Fig.9 Typical Reverse Characteristics INSTANTANEOUS REVERSE CURRENT (μA) 1000 CAPACITANCE (pF) ES3HB - ES3JB 100 10 f=1.0MHz Vsig=50mVp-p 1 1 10 10 ES3HB - ES3JB TJ=125°C 1 0.1 TJ=25°C 0.01 0.001 10 100 REVERSE VOLTAGE (V) 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 ES3HB - ES3JB UF1DLW 1 10 TJ=125°C TJ=125°C 0.1 TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) Fig.10 Typical Forward Characteristics TJ=25°C 1 0.01 Pulse width 0.001 0.1 0.3 0.4 0.4 0.6 0.5 0.8 1.0 0.6 1.2 0.7 1.4 Pulse width 300μs 0.81% duty 0.9 cycle 1 1.1 1.6 1.8 2.0 1.2 2.2 FORWARD VOLTAGE (V) 6 Version: C2102 ES3AB – ES3JB Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM 7 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: C2102 ES3AB – ES3JB Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: C2102