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ES2LD R5G

ES2LD R5G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AA

  • 描述:

    DIODE GEN PURP 200V 2A DO214AA

  • 数据手册
  • 价格&库存
ES2LD R5G 数据手册
ES2LD – ES2LJ Taiwan Semiconductor 2A, 200V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction  Ideal for automated placement Super fast recovery time for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 2 A VRRM 200 - 600 V IFSM 50 A TJ MAX 150 °C Package DO-214AA (SMB) Configuration Single die APPLICATIONS ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer and telecommunication. MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.110g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device ES2LD ES2LG ES2LJ ES2LD ES2LG ES2LJ UNIT Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VRMS 140 280 420 V Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 2 A IFSM 50 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: C2102 ES2LD – ES2LJ Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 35 °C/W Junction-to-ambient thermal resistance RӨJA 80 °C/W Junction-to-case thermal resistance RӨJC 25 °C/W Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL ES2LD Forward voltage (1) ES2LG IF = 2A, TJ = 25°C VF ES2LJ Reverse current @ rated VR TJ = 25°C (2) IR TJ = 125°C ES2LD Junction capacitance ES2LG 1MHz, VR = 4.0V CJ IF = 0.5A, IR = 1.0A, Irr = 0.25A trr ES2LJ Reverse recovery time TYP MAX UNIT - 0.94 V - 1.30 V - 1.70 V - 10 µA - 350 µA 25 - pF 20 - pF - 35 ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ES2Lx DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 200V(ES2LD) to 600V(ES2LJ) 2 Version: C2102 ES2LD – ES2LJ Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 60 50 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 3 2 1 40 ES2LD 30 20 ES2LG-2LJ 10 0 f=1.0MHz Vsig=50mVp-p 0 25 50 75 100 125 150 0.1 1 LEAD TEMPERATURE (°C) ES2LD TJ=125°C 0.1 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 10 10 ES2LD TJ=125°C TJ=125°C 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=25°C 0.1 TJ=25°C 0.01 0.001 0.3 0.1 0.4 100 UF1DLW 1 (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 10 0.01 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1 10 0.4 0.5 0.5 0.6 0.6 0.7 Pulse width Pulse width 300μs 1% duty cycle 0.7 0.8 0.9 1 1.1 0.8 0.9 1 1.1 FORWARD VOLTAGE (V) 3 Version: C2102 1.2 ES2LD – ES2LJ Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) ES2LG TJ=125°C 1 0.1 TJ=25°C 0.01 20 30 40 50 60 70 80 90 10 10 ES2LG UF1DLW 1 TJ=125°C TJ=125°C TJ=25°C 0.1 1 (A) INSTANTANEOUS FORWARD CURRENT (A) 10 10 TJ=25°C 0.01 Pulse width Pulse width 300μs 1% duty cycle 0.7 0.8 0.9 1 1.1 0.001 0.3 0.1 100 0.6 0.4 0.7 0.5 0.8 0.6 0.9 1 1.1 1.2 1.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics 10 10 ES2LJ TJ=125°C 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 90 10 1.4 ES2LJ UF1DLW 1 TJ=125°C TJ=125°C 0.1 1 TJ=25°C TJ=25°C 0.01 Pulse width 0.001 0.3 0.4 0.5 0.6 Pulse width 300μs duty cycle 0.7 1%0.8 0.9 1 1.1 0.1 100 0.5 0.7 0.9 1.1 1.3 1.5 1.7 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 4 1.2 (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.6 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.5 Typical Reverse Characteristics Version: C2102 1.2 ES2LD – ES2LJ Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: C2102 ES2LD – ES2LJ Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: C2102
ES2LD R5G 价格&库存

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