C6D10065A

C6D10065A VRRM Silicon Carbide Schottky Diode Z-Rec Rectifier ® 650 V IF (TC=155˚C)  = 10 A Qc Features • • • • • • • = = 34 nC Package New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • PIN 1 Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • • CASE PIN 2 Part Number Package Marking C6D10065A TO-220-2 C6D10065 Switch Mode Power Supplies (SMPS) Server/Telecom Power Supplies Industrial Power Supplies Solar UPS Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 37 19 10 A TC=25˚C TC=125˚C TC=155˚C IFRM Repetitive Peak Forward Surge Current 45 27 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 86 75 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 1250 1100 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 109 47 W TC=25˚C TC=110˚C Fig. 4 -55 to +175 ˚C 1 8.8 Nm lbf-in IF TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque 1 Value C6D10065A, Rev. -, 04-2019 M3 Screw 6-32 Screw Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.27 1.37 1.50 1.60 V IR Reverse Current 2 15 50 200 QC Total Capacitive Charge C EC Test Conditions Note IF = 10 A TJ=25°C IF = 10 A TJ=175°C Fig. 1 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 34 nC VR = 400 V, IF = 10A TJ = 25°C Fig. 5 Total Capacitance 611 67 53 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 5.2 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Typ. Unit Note Thermal Resistance from Junction to Case 1.38 °C/W Fig. 9 Typical Performance 100 20 18 14 12 IR R(mA) FF Foward Current, II (A) (A) IF (A) 16 Reverse LeakageICurrent, (mA) IRR (uA) TJ = -55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 10 8 6 4 2 0 0.50 0.75 1.00 1.25 1.50 FowardVVoltage, V(V) (V)VF (V) F F Figure 1. Forward Characteristics 2 C6D10065A, Rev. -, 04-2019 1.75 2.00 80 60 TJ = 175 °C TJ = 125 °C 40 TJ = 75 °C TJ = 25 °C 20 0 TJ = -55 °C 0 100 200 300 400 500 VV (V) (V) VR (V) Reverse R Voltage, R 600 Figure 2. Reverse Characteristics 700 800 Typical Performance 120 14 120 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 100 10 80 (W) PTot (W) PP (W) Tot TOT Tot Tot IF(peak) (A) IF(peak) (A) IF (A) 80 12 100 60 8 60 6 40 40 20 202 0 0 4 25 50 75 100 T ˚C ˚C TTCCC(°C) 125 150 175 25 Figure 3. Current Derating 12 50 Capacitance (pF)(pF) CC(pF) 256 C C C QC (nC) CapacitiveQ (nC) (nC) QCharge, (nC) C (pF) T ˚C T ˚C TCCCC (°C) 125 125 150 150 175 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 160 600 20 4 15 10 2 5 140 500 120 400 100 80 300 60 200 40 100 20 0 100 200 300 400 500 500 ReverseVVVoltage, (V) VRR (V) (V) RR 600 600 700 700 Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 100 100 700 180 35 8 30 0 75 75 Figure 4. Power Derating Conditions: TJ = 25 °C 45 10 40 50 C6D10065A, Rev. -, 04-2019 0 0 1 10 (V) VR (V) ReverseVVoltage, Voltage, Reverse R R 100 Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 14 3 3 2.5 (A) EC (µJ) Capacitance Stored Energy, I IFSM (A) 2 8 1.5 6 4 1 0.5 2 00 2 1.5 100 FSM CapacitanceStored Stored (mJ) ECEnergy, (Energy, mJ) EECC(µJ) Capacitance 12 2.5 10 00 100 100 200 200 300 300 400 400 500 500 Reverse VR Voltage, (V) Reverse Voltage,VVRR(V) (V) 600 600 700 700 Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) Thermal Resistance (˚C/W) Figure 7. Capacitance Stored Energy 10 1 1 0.5 10 0 10E-6 0 100 100E-6 200 300 400 1E-3 500 tp (s) Time, tp (s) Reverse Voltage, VR (V) 100E-3 1 0.5 0.5 0.3 0.05 0.1 0.02 0.05 0.01 0.02 SinglePulse 0.01 1E-3 10E-3 1E-6 1E-6 SinglePulse 10E-610E-6 100E-6 100E-6 1E-3 1E-3 100E-3 10E-31 10E-3 Time, tp (s) (Sec) T TT(Sec) (Sec) Figure 9. Transient Thermal Impedance C6D10065A, Rev. -, 04-2019 600 10E-3 700 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 0.3 0.1 10E-3 100E-3 4 TJ_initial = 25 °C TJ_initial = 110 °C 1,000 100E-3 10 100 1 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 6.477 B .235 .255 5.969 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.550 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° 6° T 3° 6° 3° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C6D10065A TO-220-2 C6D10065 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C6D10065A, Rev. -, 04-2019 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C6D10065A, Rev. -, 04-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power