C3D02065E

C3D02065E Silicon Carbide Schottky Diode Z-Rec Rectifier ® Features Package • • • • • • • • TO-252-2 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF VRRM = 650 V IF (TC=135˚C) = 4A Q c 5.8 nC = Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C3D02065E TO-252-2 C3D02065 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V 8 4 2 A TC=25˚C TC=135˚C TC=161˚C 11 7.5 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IF Continuous Forward Current Note Fig. 3 IFRM Repetitive Peak Forward Surge Current IFSM Non-Repetitive Peak Forward Surge Current 16.5 15 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IFSM Non-Repetitive Peak Forward Surge Current 120 110 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 Ptot Power Dissipation 39.5 17 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-650V ∫i2dt i2t value 1.35 1.12 A2s -55 to +175 ˚C TJ , Tstg 1 Value Operating Junction and Storage Temperature C3D02065E Rev. A, 10-2016 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 1.8 1.7 2.4 V IF = 2 A TJ=25°C IF = 2 A TJ=175°C Fig.1 IR Reverse Current 3.5 7.5 18 60 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 QC Total Capacitive Charge 5.8 nC VR = 400 V, IF = 2A di/dt = 500 A/μS TJ = 25°C Fig. 5 C Total Capacitance 175 10.5 8.5 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 0.8 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter TO-252 Package Thermal Resistance from Junction to Case Typ. Unit 3.8 °C/W Typical Performance 100 6 TJ = -55 °C 5 Reverse Leakage ICurrent, (mA) IRR (uA) 4 TJ = 75 °C TJ = 125 °C 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 80 TJ = 175 °C 60 TJ = 125 °C TJ = 75 °C R TJ = 175 °C F Foward I Current, (A) IF (A) TJ = 25 °C C3D02065E Rev. A, 10-2016 3.5 4.0 40 TJ = 25 °C TJ = -55 °C 20 0 0 200 400 600 800 (V) VR (V) ReverseVVoltage, R Figure 2. Reverse Characteristics 1000 1200 Typical Performance 30 45 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 25 35 30 (W) PP Tot(W) TOT IF(peak) (A) IF (A) 20 40 15 10 25 20 15 10 5 5 0 25 50 75 100 125 150 0 175 25 50 75 ˚C TTC (°C) 200 Conditions: TJ = 25 °C Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 180 160 7 140 Capacitance C (pF) (pF) 6 5 4 C CapacitiveQCharge, (nC) QC (nC) 175 Figure 4. Power Derating 3 120 100 80 60 2 40 1 20 0 0 0 100 200 300 400 500 600 700 (V)VR (V) Reverse V Voltage, R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 150 C Figure 3. Current Derating 8 125 ˚C TTC (°C) C 9 100 C3D02065E Rev. A, 10-2016 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1,000 1000 2 1.8 1.4 TJ_initial = 25 °C TJ_initial = 110 °C IFSM (A) 1.2 1 100 100 C Capacitance StoredE Energy, (mJ) EC (µJ) 1.6 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 600 700 10 10 10E-6 1E-05 1E-04 1E-03 1E-02 ReverseVVoltage, (V) VR (V) 100E-6 1E-3 tp (s) R Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (˚C/W) 0.5 1 0.3 0.1 0.05 0.02 100E-3 SinglePulse 0.01 10E-3 1E-6 10E-6 100E-6 1E-3 T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C3D02065E Rev. A, 10-2016 10E-3 100E-3 1 Package Dimensions SYMBOL Package TO-252-2 Tjb June 2015 MX+DI+PSI A A1 b b2 b3 c c2 D D1 E E1 e H L L2 L3 L4 θ MILLIMETERS MIN MAX 2.159 2.413 0 0.13 0.64 0.89 0.653 1.143 5.004 5.6 0.457 0.61 0.457 0.864 5.867 6.248 5.21 6.35 7.341 4.32 4.58 BSC 9.65 10.414 1.106 1.78 0.51 BSC 0.889 1.27 0.64 1.01 0° 8° Recommended Solder Pad Layout TO-252-2 Part Number Package Marking C3D02065E TO-252-2 C3D02065 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D02065E Rev. A, 10-2016 Diode Model Diode Model CSD10060 Vf Vf T T==VTV+T+If*R If*RT T V -3 -3) 0.98+(T * -1.1*10 VTT==0.92 + (Tj * J-1.35*10 ) -3 -3) R 0.18+(T 1.8*10 RT =0.052 + (T *J*0.29*10 ) T= j Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D02065E Rev. A, 10-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power