E4D20120A

E4D20120A 900 V ID @ 25˚C 11.5 A Silicon Carbide Schottky Diode E-Series Automotive VDS RDS(on) 280 mΩ Features • • • • • • Package 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits • • • • • • TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Ideal for Outdoor Environments PIN 1 Applications • • • • • CASE PIN 2 Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Automotive and Traction Power Conversion PV Inverters Part Number Package Marking E4D20120A TO-220-2 E4D20120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Repetitive Peak Reverse Voltage 1200 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 54.5 26 20 A TC=25˚C TC=135˚C TC=150˚C Fig. 3 Ptot Power Dissipation 250 112.5 W TC=25˚C TC=110˚C Fig. 4 IFRM Repetitive Peak Forward Surge Current 91 61 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Diode dV/dt ruggedness 250 V/ns i2t value 84.5 60.5 A2s Operating Junction and Storage Temperature -55 to +175 ˚C 1 8.8 Nm lbf-in VRRM dV/dt ∫i2dt TJ , Tstg Parameter TO-220 Mounting Torque 1 E4D20120A Rev. -, 07-2018 Test Conditions VR=0-960V TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. VF Forward Voltage 1.5 2.2 1.8 IR Reverse Current 35 65 200 QC Total Capacitive Charge C Total Capacitance EC Capacitance Stored Energy Unit Test Conditions Note V IF = 20 A TJ=25°C IF = 20 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 99 nC VR = 800 V, IF = 20A di/dt = 200 A/μs TJ = 25°C Fig. 5 1500 93 67 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 28 μJ VR = 800 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 0.6 °C/W Fig. 9 Typical Performance 40 1,000 TJ = -55 °C 35 TJ = 25 °C Reverse Leakage Current, IRR (uA) I (μA) TJ = 75 °C 30 TJ = 125 °C 25 TJ = 175 °C 20 15 10 5 700 600 500 TJ = 175 °C 400 TJ = 125 °C 300 TJ = 75 °C 200 TJ = 25 °C TJ = -55 °C 100 0 0 1 2 3 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 800 R Foward Current, IF (A) IF (A) 900 E4D20120A Rev. -, 07-2018 4 0 0 500 1000 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics 1500 Typical Performance 280 200 180 240 160 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 120 200 PTot (W) IF(peak) (A) 140 100 80 60 160 120 80 40 40 20 0 0 25 50 75 100 125 150 175 25 50 75 TC ˚C Figure 3. Current Derating 125 150 175 Figure 4. Power Derating 140 1600 120 1400 1200 100 1000 80 C (pF) Qc (nC) 100 TC ˚C 60 800 600 40 400 20 200 0 0 200 400 600 800 1000 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 E4D20120A Rev. -, 07-2018 1200 0 0.1 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 50 50.0 10000 10000 45 45.0 35 35.0 1000 1000 30.0 30 IFSM (A) E (mJ) EC Capacitive Energy (uJ) C 40 40.0 25 25.0 20 20.0 100 100 15 15.0 TJ_initial = 25°C TJ_initial = 110°C 10 10.0 5.05 0.00 00 200 200 400 800 400600 600 VR Reverse Voltage (V) 1000800 10 10 1E-05 1000 1E-04 1E-03 VR (V) 1E-02 tp (s) Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) Figure 7. Typical Capacitance Stored Energy Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) 1 0.5 0.3 100E-3 0.1 0.05 10E-3 0.02 0.01 SinglePulse 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 E4D20120A Rev. -, 07-2018 100E-3 1 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 6.477 B .235 .255 5.969 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.550 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° 6° T 3° 6° 3° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking E4D20120A TO-220-2 E4D20120 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 E4D20120A Rev. -, 07-2018 Diode Model Diode Model CSD04060 Vf VfTT==VV T + If*R T T+If*R T V VTT= (TJj **-1.40*10 -1.3*10-3-3) ) = 0.965 0.97 ++ (T -3 R RTT== 0.096 0.023++(T (Tj J**1.06*10 2.71*10)-4) Note: TJ = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • • Wolfspeed E-Series Family: http//wolfspeed.com/E-Series Wolfspeed SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 E4D20120A Rev. -, 07-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power