C4D20120A
VRRM
Silicon Carbide Schottky Diode
Z-Rec Rectifier
®
IF (TC=135˚C) =
26 A
= 99 nC
Package
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-220-2
Benefits
•
•
•
•
•
1200 V
Q c
Features
•
•
•
•
•
•
=
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
•
•
•
•
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C4D20120A
TO-220-2
C4D20120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VR
DC Peak Reverse Voltage
1200
V
IF
Continuous Forward Current
54.5
26
20
A
TC=25˚C
TC=135˚C
TC=150˚C
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
91
61
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM
Non-Repetitive Forward Surge Current
130
110
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
Fig. 8
IF,Max
Non-Repetitive Peak Forward Current
1150
950
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Fig. 8
Power Dissipation
250
112.5
W
TC=25˚C
TC=110˚C
Fig. 4
VR=0-960V
Ptot
dV/dt
Diode dV/dt ruggedness
200
V/ns
∫i2dt
i2t value
84.5
60.5
A2s
TJ
Operating Junction Range
-55 to
+175
˚C
Tstg
Storage Temperature Range
-55 to
+135
˚C
1
8.8
Nm
lbf-in
TO-220 Mounting Torque
1
Value
C4D20120A Rev. E, 10-2016
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
VF
Forward Voltage
1.5
2.2
1.8
3
V
IR
Reverse Current
35
65
200
400
QC
Total Capacitive Charge
C
Total Capacitance
EC
Capacitance Stored Energy
Test Conditions
Note
IF = 20 A TJ=25°C
IF = 20 A TJ=175°C
Fig. 1
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
Fig. 2
99
nC
VR = 800 V, IF = 20A
di/dt = 200 A/μs
TJ = 25°C
Fig. 5
1500
93
67
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Fig. 6
28
μJ
VR = 800 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance from Junction to Case
Typ.
Unit
Note
0.6
°C/W
Fig. 9
Typical Performance
40
1
TJ=-55°C
T = 25°C
TJ= 75°C
J
T =125°C
TJ =175°C
J
35
30
0.9
0.8
0.7
IR (mA)
IF (A)
25
20
15
0.6
0.5
0.4
0.3
10
TJ=-55°C
TJ= 25°C
TJ= 75°C
T =125°C
0.2
5
0.1
0
0
1
2
3
VF (V)
Figure 1. Forward Characteristics
2
TJ =175°C
J
C4D20120A Rev. E, 10-2016
4
0
0
500
1000
VR (V)
Figure 2. Reverse Characteristics
1500
Typical Performance
280
200
180
240
10%
20%
30%
50%
70%
DC
IF(peak) (A)
140
120
Duty
Duty
Duty
Duty
Duty
200
PTot (W)
160
100
80
60
160
120
80
40
40
20
0
25
50
75
100
125
150
0
175
25
50
75
TC ˚C
125
150
175
Figure 4. Power Derating
Figure 3. Current Derating
140
1600
120
1400
1200
100
1000
80
C (pF)
Qc (nC)
100
TC ˚C
60
800
600
40
400
20
200
0
0
0
200
400
600
800
1000
1200
0.1
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
3
C4D20120A Rev. E, 10-2016
1
10
100
VR (V)
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
50
50.0
10000
10000
45
45.0
40
40.0
1000
1000
30.0
30
IFSM (A)
E (mJ)
EC Capacitive
Energy (uJ)
C
35
35.0
25
25.0
20
20.0
T
= 25°C
100
100 J_initial
TJ_initial = 110°C
15
15.0
10
10.0
5.05
10
10
1E-05 1E-04 1E-03 1E-02
0.00
0 200 400 600 800 1000
0
200
400
600
800
1000
VR Reverse Voltage (V)
VR (V)
tp (s)
Figure 7. Typical Capacitance Stored Energy
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform)
Thermal
Resistance
Junction
To Case
Impedance,(˚C/W)
ZthJC (oC/W)
1
0.5
0.3
100E-3
0.1
0.05
10E-3
0.02
0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
Time,
tp (s)
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C4D20120A Rev. E, 10-2016
100E-3
1
Package Dimensions
Package TO-220-2
POS
PIN 1
PIN 2
CASE
Inches
Millimeters
Min
Max
Min
Max
A
.381
.410
9.677
10.414
6.477
B
.235
.255
5.969
C
.100
.120
2.540
3.048
D
.223
.337
5.664
8.560
D1
.457-.490
11.60-12.45 typ
D2
.277-.303 typ
7.04-7.70 typ
D3
.244-.252 typ
6.22-6.4 typ
E
.590
.615
14.986
15.621
E1
.302
.326
7.68
8.28
E2
.227
251
5.77
6.37
F
.143
.153
3.632
3.886
G
1.105
1.147
28.067
29.134
H
.500
.550
12.700
13.970
L
.025
.036
.635
.914
M
.045
.055
1.143
1.550
N
.195
.205
4.953
5.207
P
.165
.185
4.191
4.699
Q
.048
.054
1.219
1.372
S
3°
6°
3°
6°
6°
T
3°
6°
3°
U
3°
6°
3°
6°
V
.094
.110
2.388
2.794
W
.014
.025
.356
.635
X
3°
5.5°
3°
5.5°
Y
.385
.410
9.779
10.414
z
.130
.150
3.302
3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
Recommended Solder Pad Layout
TO-220-2
Part Number
Package
Marking
C4D20120A
TO-220-2
C4D20120
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C4D20120A Rev. E, 10-2016
Diode Model
Diode Model CSD04060
Vf TfT==
VTV+T+If*R
If*RT T
V
-3
V
VTT==0.965
+ (Tj *J*-1.3*10
) -3)
0.97+(T
-1.40*10
-3
RTT==0.096
+ (Tj * 1.06*10
) -4
0.023+(T
J* 2.71*10 )
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
•
•
•
Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C4D20120A Rev. E, 10-2016
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
