GE04MPS06E

GE04MPS06E 650V 4A SiC Schottky MPS™ Diode TM Silicon Carbide Schottky Diode VRRM = IF (TC = 162°C) = QC = Features • • • • • • • • Package Revolutionary Low Built-In Voltage (VBI) Gen5 Thin Chip Technology for Low VF Superior Figure of Merit QC * VF Enhanced Surge Current Robustness Low Thermal Resistance Zero Reverse Recovery 100% Avalanche (UIL) Tested Excellent dV/dt Ruggedness Case RoHS TO-252-2 Advantages • • • • • • • 650 V 4A 10 nC K REACH A Applications Low Conduction Losses for All Load Conditions Optimal Price Performance Increased System Power Density High System Reliability Reduced Cooling Requirements Temperature Independent Fast Switching Easy to Parallel without Thermal Runaway • • • • • Switched Mode Power Supply (SMPS) Solar Inverter Server and Telecom Power Supply Battery Charger Uninterruptible Power Supply (UPS) Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Parameter Repetitive Peak Reverse Voltage Continuous Forward Current Symbol VRRM IF Non-Repetitive Peak Forward Surge Current, Half Sine Wave IF,SM Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM Non-Repetitive Peak Forward Surge Current i2t Value Non-Repetitive Avalanche Energy Diode Ruggedness Power Dissipation Operating and Storage Temperature Rev 21/Jun IF,MAX ∫i2dt EAS dV/dt PTOT T j , T stg Conditions TC = 100°C, D = 1 TC = 135°C, D = 1 TC = 162°C, D = 1 TC = 25°C, tP = 10 ms TC = 150°C, tP = 10 ms TC = 25°C, tP = 10 ms TC = 150°C, tP = 10 ms TC = 25°C, tP = 10 µs TC = 25°C, tP = 10 ms L = 6.5 mH, IAS = 4 A VR = 0 ~ 520 V TC = 25°C Values 650 11 8 4 28 22 16 11 140 3.92 53 200 82 -55 to 175 Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf Unit V Note A Fig. 4 A A A A2s mJ V/ns W °C Fig. 3 Page 1 of 7 GE04MPS06E 650V 4A SiC Schottky MPS™ Diode TM Electrical Characteristics Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time tS Total Capacitance C Conditions Min. IF = 4 A, Tj = 25°C IF = 4 A, Tj = 175°C VR = 650 V, Tj = 25°C VR = 650 V, Tj = 175°C VR = 200 V VR = 400 V IF ≤ IF,MAX dIF/dt = 200 A/µs VR = 200 V VR = 400 V VR = 1 V, f = 1MHz VR = 400 V, f = 1MHz Values Typ. 1.25 1.75 1 78 7 10 Max. 1.4 10 Unit Note V Fig. 1 µA Fig. 2 nC Fig. 7 < 10 ns 186 13 pF Fig. 6 Unit Note °C/W g Fig. 9 Thermal/Package Characteristics Parameter Symbol Thermal Resistance, Junction - Case Weight Rev 21/Jun RthJC WT Conditions Min. Values Typ. 1.84 0.3 Max. Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf Page 2 of 7 GE04MPS06E 650V 4A SiC Schottky MPS™ Diode Figure 1: Typical Forward Characteristics I F = f(VF,Tj); tP = 250 µs Figure 3: Power Derating Curves PTOT = f(TC ); Tj = 175°C Rev 21/Jun TM Figure 2: Typical Reverse Characteristics I R = f(VR,Tj) Figure 4: Current Derating Curves (Typical VF) I F = f(TC ); D = tP/T; Tj ≤ 175°C; fSW > 10kHz Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf Page 3 of 7 GE04MPS06E 650V 4A SiC Schottky MPS™ Diode Figure 5: Current Derating Curves (Maximum VF) I F = f(TC ); D = tP/T; Tj ≤ 175°C; fSW > 10kHz Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics QC = f(VR); f = 1MHz Rev 21/Jun TM Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics C = f(VR); f = 1MHz Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics EC = f(VR); f = 1MHz Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf Page 4 of 7 GE04MPS06E 650V 4A SiC Schottky MPS™ Diode TM Figure 9: Transient Thermal Impedance Zth,jc = f(tP,D); D = tP/T Figure 10: Forward Curve Model Forward Curve Model Equation: I F = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m × Tj + n (V) m = -0.00124 (V/°C) n = 0.72 (V) Differential Resistance (RDIFF): 1/RDIFF RDIFF(Tj) = a × Tj2 + b × Tj + c (Ω) a = 2.41e-06 (Ω/°C2) b = 0.000681 (Ω/°C) c = 0.12 (Ω) VBI Forward Power Loss Equation: PLOSS = VBI(Tj) × I AVG + RDIFF(Tj) × I RMS2 I F = f(VF,Tj) Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf Page 5 of 7 GE04MPS06E 650V 4A SiC Schottky MPS™ Diode TM Package Dimensions TO-252-2 Package Outline 0.265 (6.73) 0.252 (6.40) 0.094 (2.38) 0.087 (2.20) 0.050 (1.27) 0.035 (0.89) 0.215 (5.46) 0.205 (5.21) 0.023 (0.58) 0.018 (0.46) SEATING PLANE 0.409 (10.40) 0.370 (9.40) 0.245 (6.22) 0.236 (6.00) 0.173 (4.40) min 0.205 (5.21) min 0.005 (0.127) max 0.045 (1.14) 0.030 (0.77) 0.090 BSC (2.286 BSC) 0.035 (0.88) 0.025 (0.64) 0.180 BSC (4.572 BSC) Recommended Solder Pad Layout 0.023 (0.58) 0.018 (0.46) 0.1080 REF (2.743 REF) 0.070 (1.77) 0.055 (1.40) 0.020 BSC (0.508 BSC) Package View 0.236 (6.00) Case (K) Case (K) 0.256 (6.50) 0.246 (6.25) 0.118 (3.00) 0.055 (1.40) 0.090 (2.29) 0.055 (1.40) K A 0.090 (2.29) NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf Page 6 of 7 GE04MPS06E 650V 4A SiC Schottky MPS™ Diode TM Compliance RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. Disclaimer GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Related Links • SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E_SPICE.zip • PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E_PLECS.zip • CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E_3D.zip • Evaluation Boards: https://www.genesicsemi.com/technical-support • Reliability: https://www.genesicsemi.com/reliability • Compliance: https://www.genesicsemi.com/compliance • Quality Manual: https://www.genesicsemi.com/quality Revision History • Rev 21/Jun: Updated with most recent test data • Supersedes: Rev 20/Jul www.genesicsemi.com/sic-schottky-mps/ Rev 21/Jun Copyright© 2021 GeneSiC Semiconductor Inc. All Rights Reserved. Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7